ON Semiconductor MJ10009 * SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high-voltage, high-speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: * * * * * * * Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn-Off Times 1.6 s (max) Inductive Crossover Time - 10 A, 100C 3.5 s (max) Inductive Storage Time - 10 A, 100C Operating Temperature Range -65 to +200C 100C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 1-07 TO-204AA (TO-3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII 100 MAXIMUM RATINGS Rating 15 Symbol Value Unit Collector-Emitter Voltage VCEO 500 Vdc Collector-Emitter Voltage VCEX 500 Vdc Collector-Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEB 8 Vdc IC Adc Collector Current -- Continuous -- Peak (1) ICM 20 30 Base Current -- Continuous -- Peak (1) IB IBM 2.5 5 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD 175 100 1 Watts TJ, Tstg -65 to +200 C Symbol Max Unit RJC 1 C/W TL 275 C Operating and Storage Junction Temperature Range W/C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 1 Publication Order Number: MJ10009/D MJ10009 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0, Vclamp = Rated VCEO) VCEO(sus) 500 -- -- Vdc Collector Emitter Sustaining Voltage (Table 1, Figure 12) (IC = 2 A, Vclamp = Rated VCEX, TC = 100C, VBE(off) = 5 V) (IC = 10 A, Vclamp = Rated VCEX, TC = 100C, VBE(off) = 5 V) VCEX(sus) 500 375 -- -- -- -- -- -- -- -- 0.25 5 OFF CHARACTERISTICS Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100C) ICER -- -- 5 mAdc Emitter Cutoff Current (VEB = 2 Vdc, IC = 0) IEBO -- -- 175 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure 11 ON CHARACTERISTICS (2) DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) (IC = 10 Adc, VCE = 5 Vdc) hFE -- 40 30 -- -- 400 300 -- -- -- -- -- -- 2 3.5 2.5 -- -- -- -- 2.5 2.5 Vf -- 3 5 Vdc Small-Signal Current Gain (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) hfe 8 -- -- -- Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Cob 100 -- 325 pF td -- 0.12 0.25 s tr -- 0.5 1.5 s ts -- 0.8 2.0 s tf -- 0.2 0.6 s (IC = 10 A( A(pk), k), Vclam clamp = 250 V, IB1 = 500 mA, VBE(off) = 5 Vdc, TC = 100C) tsv -- 1.5 3.5 s tc -- 0.36 1.6 s (IC = 10 A( A(pk), k), Vclam clamp = 250 V, IB1 = 500 mA, VBE(off) = 5 Vdc) tsv -- 0.8 -- s tc -- 0.18 -- s Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 500 mAdc) (IC = 20 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 500 mAdc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 500 mAdc) (IC = 10 Adc, IB = 500 mAdc, TC = 100C) VBE(sat) Diode Forward Voltage (1) (IF = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, IC = 10 A, IB1 = 500 mA mA, VBE(off) Vdc tp = 25 s BE( ff) = 5 Vdc, Duty Cycle 2%). Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time Storage Time Crossover Time (1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. (2) Pulse Test: PW = 300 s, Duty Cycle 2%. http://onsemi.com 2 MJ10009 TYPICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 400 TJ = 150C 200 25C 100 60 40 VCE = 5 V 20 0.2 1 2 5 IC, COLLECTOR CURRENT (AMP) 0.5 10 20 3 2.6 IC = 5 A 1.8 1.4 1 0.03 TJ = 25C 0.05 2.8 IC/IB = 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 0.2 0.5 IB, BASE CURRENT (AMP) 1.6 TJ = - 55C 25C 1.2 0.5 0.7 1 2 5 3 7 IC, COLLECTOR CURRENT (AMP) 150C 0.8 0.2 0.3 20 10 0.5 0.7 1 2 3 5 7 IC, COLLECTOR CURRENT (AMP) Figure 3. Collector-Emitter Saturation Voltage 20 1000 Cob , OUTPUT CAPACITANCE (pF) VCE = 250 V 10 Figure 4. Base-Emitter Voltage 104 103 TJ = 125C 102 100C 75C 101 REVERSE 100 10-1 3 25C 1.6 25C 0.2 0.3 2 TJ = - 55C 2 150C 0.4 1 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3 V 2.4 0.8 0.1 Figure 2. Collector Saturation Region 2.4 1.2 20 A 2.2 Figure 1. DC Current Gain 2 10 A -0.2 FORWARD 25C 0 +0.2 +0.4 +0.6 500 300 200 Cob 100 70 50 0.4 0.6 +0.8 TJ = 25C 700 1 2 4 6 10 20 40 60 100 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance http://onsemi.com 3 200 400 MJ10009 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING + V DRIVE 0.005 F DRIVER SCHEMATIC 1 INPUT CONDITIONS 20 10 0 2N3762 + 2 - PG IN HP214 1 50 CIRCUIT VALUES + 50 100 TEST CIRCUITS INPUT SEE ABOVE FOR DETAILED CONDITIONS Rcoil IC(pk) t1 VCC tf VCE or Vclamp ICM VCEM 90% VCEM tsv t2 tfi tti tc VCE 90% IB1 10% VCEM 10% ICM ) pk VCC Lcoil (IC TUT 1 2 ) pk RL VCC VClamp t measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222. Vclamp 90% ICM trv Lcoil (IC Test Equipment Scope -- Tektronix 475 or Equivalent TIME IC t2 VCE RS = 0.1 2 t1 Adjusted to Obtain IC t1 tf CLAMPED t Lcoil Vclamp RESISTIVE TEST CIRCUIT tf UNCLAMPED t2 IC 1N4937 OR EQUIVALENT VCC = 250 V RL = 25 Pulse Width = 25 s OUTPUT WAVEFORMS INDUCTIVE TEST CIRCUIT TUT MTP3055E - Voff DRIVE Vclamp = Rated VCEX Value 1 Use inductive switching driver as the input to the resistive test circuit. - 1000 Lcoil = 180 H Rcoil = 0.05 VCC = 20 V TURN-OFF TIME 2 0.05 F 2.0 F Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) IB1 adjusted to obtain the forced hFE desired MTP3055E 10 2 IB1 0.005 10 10 F - 38 V PW Varied to Attain IC = 100 mA IB 1 RB For inductive loads pulse width is adjusted to obtain specified IC 2% IC TIME PSWT = 1/2 VCC IC (tc) f SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate Typical inductive switching waveforms are shown in Figure 7. In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100C. Figure 7. Inductive Switching Measurements http://onsemi.com 4 MJ10009 RESISTIVE SWITCHING PERFORMANCE 2 1.0 VCC = 250 V IC/IB = 20 VBE(off) = 5 V TJ = 25C tP = 25 s, DUTY CYCLE 2% 0.5 VCC = 250 V IC/IB = 20 TJ = 25C 0.5 t, TIME (s) t, TIME (s) 1 tr 0.2 ts 0.2 tf tP = 25 s, DUTY CYCLE 2% 0.1 td 0.1 1 2 5 10 IC, COLLECTOR CURRENT (AMP) 0.05 20 1 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Turn-On Time 1.0 0.7 0.5 0.3 0.2 5 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 9. Turn-Off Time D = 0.5 0.2 0.1 0.1 0.07 0.05 P(pk) ZJC (t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 10. Thermal Response http://onsemi.com 5 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k MJ10009 IC, COLLECTOR CURRENT (AMP) The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 50 FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 s 20 100 s 10 5 2 1 0.5 1 ms dc 0.2 0.1 0.05 0.02 0.01 0.005 SAFE OPERATING AREA INFORMATION BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 10 20 50 100 MJ10009 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 450 600 500 Figure 11. Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMP) REVERSE BIAS 20 18 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as VCEX(sus) at a given collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. See Table 1 for circuit conditions. TC = 100C IC/IB1 20 16 14 12 10 8 VBE(off) = 5 V VBE(off) = 2 V VBE(off) = 0 V 6 4 2 0 0 500 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Reverse Bias Switching Safe Operating Area (MJ10009) 10 FORWARD BIAS SECOND BREAKDOWN DERATING 80 IB2(pk) , BASE CURRENT (AMP) POWER DERATING FACTOR (%) 100 60 THERMAL DERATING 40 20 0 0 40 80 120 160 TC, CASE TEMPERATURE (C) 7 SEE TABLE 1 FOR CONDITIONS, FIGURE 7 FOR WAVESHAPE. 2 0 200 IC = 10 A 5 0 1 2 5 7 VBE(off), REVERSE BASE CURRENT (VOLTS) Figure 14. Reverse Base Current versus VBE(off) with No External Base Resistance Figure 13. Power Derating http://onsemi.com 6 8 MJ10009 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M http://onsemi.com 7 INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 MJ10009 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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