NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description Features The DGD0506 is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. The floating high-side driver is rated up to 50V. The DGD0506 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with MCUs. UVLO for high-side and low-side will protect a MOSFET with loss of supply. To protect MOSFETs, cross conduction prevention logic prevents the HO and LO outputs being on at the same time. Fast and well-matched propagation delays allow a higher switching frequency, enabling a smaller, more compact power switching design using smaller associated components. The DGD0506 is offered in the W-DFN3030-10 (Type TH) package and operates over an extended -40C to +125C temperature range. 50V Floating High-Side Driver Drives Two N-Channel MOSFETs in a Half-Bridge Configuration 1.25A Source / 2.0A Sink Output Current Capability Internal Bootstrap Shottky Diode Included Undervoltage Lockout for High-Side and Low-Side Drivers Programmable Deadtime to Protect MOSFETs Logic Input (IN and EN) 3.3V Capability Ultra Low Standby Currents (<1A) Extended Temperature Range: -40C to +125C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Applications Mechanical Data DC-DC Converters Motor Controls Battery Powered Hand Tools eCig Devices Class D Power Amplifiers Case: W-DFN3030-10 (Type TH) Case material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminals: Finish - Matte Tin Finish Solderable per MIL-STD-202, Method 208 Weight: 0.017 grams (Approximate) Top View Bottom View W-DFN3030-10 (Type TH) Typical Configuration Ordering Information (Note 4) Product DGD0506FN-7 Notes: Marking DGD0506 Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YYWW DGD0506 Typical Configuration DGD0506 Document number: DS38740 Rev. 6 - 3 DGD0506 = Product Type Marking Code YY = Year (ex: 17 = 2017) WW = Week (01 to 53) 1 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Pin Diagrams Top View: W-DFN3030-10 (Type TH) Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 PAD Pin Name VCC VB HO VS NC DT EN IN COM LO Substrate Function Low-Side and Logic Supply High-Side Floating Supply High-Side Gate Drive Output High-Side Floating Supply Return No Connect (No Internal Connection) Deadtime Control Logic Input Enable, a Logic Low turns off Gate Driver Logic Input for High-Side and Low-Side Gate Driver Outputs (HO and LO), in Phase with HO Low-Side and Logic Return Low-Side Gate Drive Output Connect to COM on PCB Functional Block Diagram DGD0506 Document number: DS38740 Rev. 6 - 3 2 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic High-Side Floating Positive Supply Voltage High-Side Floating Negative Supply Voltage High-Side Floating Output Voltage Offset Supply Voltage Transient Logic and Low-Side Fixed Supply Voltage Low-Side Output Voltage Logic Input Voltage (IN and EN) Bootstrap Diode Current (Pulsed <10s) Symbol VB VS VHO dVS / dt VCC VLO VIN IBD Value -0.3 to +50 VB-14 to VB+0.3 VS-0.3 to VB+0.3 50 -0.3 to +15 -0.3 to VCC+0.3 -0.3 to +15 500 Unit V V V V/ns V V V mA Value 0.4 Unit W 64 C/W Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor (Note 5) Symbol PD RJA Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) RJC 42 C/W Operating Temperature Lead Temperature (Soldering, 10s) Storage Temperature Range TJ TL TSTG +150 +300 -55 to +150 C Note: 5. When mounted on a standard JEDEC 2-layer FR-4 board. Recommended Operating Conditions Parameter High-Side Floating Supply High-Side Floating Supply Offset Voltage High-Side Floating Output Voltage Logic and Low Side Fixed Supply Voltage Low-Side Output Voltage Logic Input Voltage (IN and EN) Bootstrap Diode Current (Pulsed <10s) Ambient Temperature Notes: Symbol VB VS VHO VCC VLO VIN IBD TA 6. Logic operation for VS of -5V to +50V. Logic state held for VS of -5V to -VBS. Min Max Unit VS + 8 (Note 6) VS + 14 50 (Note 7) VS 8 0 0 -40 VB 14 V V V V V V mA C VCC 5 400 +125 7. Provided VB doesnt exceed absolute maximum rating of 50V. DGD0506 Document number: DS38740 Rev. 6 - 3 3 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 DC Electrical Characteristics (VCC = VBS = 12V, COM = VS = 0V, @TA = +25C, unless otherwise specified.) (Note 8) Parameter Logic "1" Input Voltage Logic "0" Input Voltage Enable Logic "1" Input Voltage Enable Logic "0" Input Voltage Input Voltage Hysteresis High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current VCC Shutdown Supply Current VCC Quiescent Supply Current VCC Operating Supply Current VBS Quiescent Supply Current VBS Operating Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold Output High Short-Circuit Pulsed Current Output Low Short-Circuit Pulsed Current Forward Voltage of Bootstrap Diode Forward Voltage of Bootstrap Diode Note: Symbol Min Typ Max Unit VIH VIL VENIH VENIL VINHYS VOH VOL ILK ICCSD 2.4 - 1.5 - - - - - - - - - - 0.6 0.45 0.15 10 0 - 0.8 - 0.7 - 0.6 0.22 50 1 V V V V V V V A A ICCQ - 0.32 0.5 mA ICCOP IBSQ IBSOP IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+ IOVF1 VF2 - - - - - 5.9 5.6 5.9 5.6 0.9 1.5 - - 2.1 62 1.1 25 0 6.9 6.6 6.9 6.6 1.25 2.0 0.27 0.8 - 100 - 60 1 7.9 7.6 7.9 7.6 - - - - mA A mA A A V V V V A A V V Condition - - - - - IO+ = 100mA IO- = 100mA VB = VS = 50V VIN = 0V or 5V, VEN = 0V VIN = 0V or 5V, RDT = 100k fs = 500kHz VIN = 0V or 5V fs = 500kHz VIN = 5V VIN = 0V - - - - VO = 0V, PW 10s VO = 15V, PW 10s IF = 100A IF = 100mA, PW 10ms 8. The VIN and IIN parameters are applicable to the two logic pins: IN and EN. The VO and IO parameters are applicable to the respective output pins: HO and LO. AC Electrical Characteristics (VCC = VBS = 12V, COM = VS = 0V, CL = 1000pF, @TA = +25C, unless otherwise specified.) Parameter Symbol Turn-on Propagation Delay, HO & LO tON Turn-off Propagation Delay, HO & LO Turn-on Rise Time Turn-off Fall Time Delay Matching tOFF tR tF tDM Deadtime: tDT LO-HO & tDT HO-LO tDT Deadtime Matching DGD0506 Document number: DS38740 Rev. 6 - 3 tMDT Min 65 350 - - - - 40 300 - 4 of 13 www.diodes.com Typ 96 463 22 17 12 - 70 430 - Max 125 580 56 35 25 50 100 560 50 Unit ns ns ns ns ns ns ns ns ns Condition RDT = 10k RDT = 100k - - - - RDT = 10k RDT = 100k RDT = 100k November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Timing Waveforms DGD0506 Document number: DS38740 Rev. 6 - 3 5 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Typical Performance Characteristics (@TA = +25C, unless otherwise specified.) DGD0506 Document number: DS38740 Rev. 6 - 3 6 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Typical Performance Characteristics (Cont.) DGD0506 Document number: DS38740 Rev. 6 - 3 7 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Typical Performance Characteristics (Cont.) DGD0506 Document number: DS38740 Rev. 6 - 3 8 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Typical Performance Characteristics (Cont.) DGD0506 Document number: DS38740 Rev. 6 - 3 9 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Application Information Bootstrap Capacitor Selection The capacitance of the bootstrap capacitor should be high enough to provide the charge required by the gate of the high side MOSFET with only a minimal loss of voltage across it. As a general guideline, it is recommended to make sure the charge stored by the bootstrap capacitor is about 50 times more than the required gate charge at operating VCC(usually about 10V to 12V). The formula to calculate the change in VBS to provide a certain amount of gate charge is shown below; Q = C * V where Q is the gate charge required by the external MOSFET to raise its gate voltage to 10V. C is the bootstrap capacitance and V is the voltage drop across the Vbs. Example: To switch a high side MOSFET that requires 20nC of gate charge to raise its gate voltage to 10V, the capacitor size can be calculated as below; QG(MOSFET) = C(BOOTSTRAP) * VBS ; VBS = voltage drop acorss the bootstrap capacitor while providing the required gate charge. In this example, lets say the acceptable VBS is 200mV. The required bootstrap capacitor for the job is; C(BOOTSTRAP) = QG(MOSFET)/ VBS = 20nC/200mV = 100nF Bootstrap Diode Current The DGD0506 comes with an integrated bootstrap Schottky diode. The forward characteristics of the diode is shown in the figure 28. The maximum recommended operating current is 400mA pulsed. Under steady state conditions the only current flowing through the internal diode is the charge current required by the highside MOSFETs gate capacitance, however, it is important to cover applications where the inrush current exceeds this rating. In such applications to limit the current flowing through the internal diode to the recommended value, two techniques are suggested as shown in figures 29 and 30. Figure 28. DGD0506 Internal Diode + Internal Resistor VF vs. IF Pre-Bias Resistor between Vs and COM This technique eliminates the inrush current, altogether, by pre-charging the capacitor to a value close to VCC before the DGD0506 is enabled and an input signal is applied. By pre-charging the capacitor to VCC only a small steady state current flows through the internal diode eliminating the need for any external diode. The recommended range for the Rs is 10k to 100k. DGD0506 Document number: DS38740 Rev. 6 - 3 10 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Application Information (Cont.) External Diode and Resistor: To enable appropriate current sharing and limit the internal bootstrap current to less than 400mA, a Schottky diode must be used as an external diode. The voltage drop across the external diode and resistor must be limited to 2.4V, to limit the internal diodes current share to <400mA. Hence it is important to choose an appropriate external diode and resistor combination. At any observed inrush current peak, it is important that the combined voltage drop of the external resistor and diode is less than 2.4V. For internal diode current to be <400mA; (IINRUSH * REXT) + (VfEXT @ IINRUSH) < 2.4V. Figure 29. Inrush current is greatly limited by precharging the boost-strap Capacitor through Rs DGD0506 Document number: DS38740 Rev. 6 - 3 Figure 30. Current into the boost-strap capacitance is shared between the external diode and the internal Diode 11 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. W-DFN3030-10 (Type TH) D2 D e1 L E E2 h h e A1 A b A3 W-DFN3030-10 (Type TH) Dim Min Max Typ A 0.70 0.80 0.75 A1 -0.05 0.02 A3 0.18 0.25 0.20 b 0.18 0.30 0.25 D 2.90 3.10 3.00 D2 2.40 2.60 2.50 e 0.50BSC e1 2.00BSC E 2.90 3.10 3.00 E2 1.45 1.65 1.55 h 0.20 0.30 0.25 L 0.30 0.50 0.40 All Dimensions in mm Seating Plane Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. W-DFN3030-10 (Type TH) X1 Dimensions X2 Y2 C X X1 X2 Y Y1 Y2 Y1 Y C Value (in mm) 0.500 0.300 2.300 2.600 0.600 3.300 1.650 X Note : For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. DGD0506 Document number: DS38740 Rev. 6 - 3 12 of 13 www.diodes.com November 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DGD0506A DGD0506 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com DGD0506 Document number: DS38740 Rev. 6 - 3 13 of 13 www.diodes.com November 2017 (c) Diodes Incorporated