DGD0506
Document number: DS38740 Rev. 6 - 3
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DGD0506
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER
WITH PROGRAMMABLE DEADTIME
IN W-DFN3030-10 (Type TH)
Description
The DGD0506 is a high-frequency half-bridge gate driver capable of
driving N-channel MOSFETs in a half-bridge configuration. The
floating high-side driver is rated up to 50V.
The DGD0506 logic inputs are compatible with standard TTL and
CMOS levels (down to 3.3V) to interface easily with MCUs. UVLO for
high-side and low-side will protect a MOSFET with loss of supply. To
protect MOSFETs, cross conduction prevention logic prevents the HO
and LO outputs being on at the same time.
Fast and well-matched propagation delays allow a higher switching
frequency, enabling a smaller, more compact power switching design
using smaller associated components. The DGD0506 is offered in the
W-DFN3030-10 (Type TH) package and operates over an extended
-40°C to +125°C temperature range.
Applications
DC-DC Converters
Motor Controls
Battery Powered Hand Tools
eCig Devices
Class D Power Amplifiers
Features
50V Floating High-Side Driver
Drives Two N-Channel MOSFETs in a Half-Bridge
Configuration
1.25A Source / 2.0A Sink Output Current Capability
Internal Bootstrap Shottky Diode Included
Undervoltage Lockout for High-Side and Low-Side Drivers
Programmable Deadtime to Protect MOSFETs
Logic Input (IN and EN) 3.3V Capability
Ultra Low Standby Currents (<1µA)
Extended Temperature Range: -40°C to +125°C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: W-DFN3030-10 (Type TH)
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminals: Finish – Matte Tin Finish
Solderable per MIL-STD-202, Method 208
Weight: 0.017 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DGD0506FN-7
DGD0506
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
W-DFN3030-10 (Type TH)
Top View
Typical Configuration
YYWW
DGD0506
DGD0506 = Product Type Marking Code
YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
Typical Configuration
Bottom View
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
Pin Diagrams
Pin Descriptions
Pin Number
Pin Name
Function
1
VCC
Low-Side and Logic Supply
2
VB
High-Side Floating Supply
3
HO
High-Side Gate Drive Output
4
VS
High-Side Floating Supply Return
5
NC
No Connect (No Internal Connection)
6
DT
Deadtime Control
7
EN
Logic Input Enable, a Logic Low turns off Gate Driver
8
IN
Logic Input for High-Side and Low-Side Gate Driver Outputs (HO and LO), in Phase with HO
9
COM
Low-Side and Logic Return
10
LO
Low-Side Gate Drive Output
PAD
Substrate
Connect to COM on PCB
Functional Block Diagram
Top View: W-DFN3030-10 (Type TH)
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
High-Side Floating Positive Supply Voltage
VB
-0.3 to +50
V
High-Side Floating Negative Supply Voltage
VS
VB-14 to VB+0.3
V
High-Side Floating Output Voltage
VHO
VS-0.3 to VB+0.3
V
Offset Supply Voltage Transient
dVS / dt
50
V/ns
Logic and Low-Side Fixed Supply Voltage
VCC
-0.3 to +15
V
Low-Side Output Voltage
VLO
-0.3 to VCC+0.3
V
Logic Input Voltage (IN and EN)
VIN
-0.3 to +15
V
Bootstrap Diode Current (Pulsed <10µs)
IBD
500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation Linear Derating Factor (Note 5)
PD
0.4
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
64
°C/W
Thermal Resistance, Junction to Case (Note 5)
RθJC
42
°C/W
Operating Temperature
TJ
+150
°C
Lead Temperature (Soldering, 10s)
TL
+300
Storage Temperature Range
TSTG
-55 to +150
Note: 5. When mounted on a standard JEDEC 2-layer FR-4 board.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
High-Side Floating Supply
VB
VS + 8
VS + 14
V
High-Side Floating Supply Offset Voltage
VS
(Note 6)
50 (Note 7)
V
High-Side Floating Output Voltage
VHO
VS
VB
V
Logic and Low Side Fixed Supply Voltage
VCC
8
14
V
Low-Side Output Voltage
VLO
0
VCC
V
Logic Input Voltage (IN and EN)
VIN
0
5
V
Bootstrap Diode Current (Pulsed <10µs)
IBD
-
400
mA
Ambient Temperature
TA
-40
+125
°C
Notes: 6. Logic operation for VS of -5V to +50V. Logic state held for VS of -5V to -VBS.
7. Provided VB doesn‟t exceed absolute maximum rating of 50V.
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
DC Electrical Characteristics (VCC = VBS = 12V, COM = VS = 0V, @TA = +25°C, unless otherwise specified.) (Note 8)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
Logic “1” Input Voltage
VIH
2.4
–
–
V
–
Logic “0” Input Voltage
VIL
–
–
0.8
V
–
Enable Logic “1” Input Voltage
VENIH
1.5
–
–
V
–
Enable Logic “0” Input Voltage
VENIL
–
–
0.7
V
–
Input Voltage Hysteresis
VINHYS
–
0.6
–
V
–
High Level Output Voltage, VBIAS - VO
VOH
–
0.45
0.6
V
IO+ = 100mA
Low Level Output Voltage, VO
VOL
–
0.15
0.22
V
IO- = 100mA
Offset Supply Leakage Current
ILK
–
10
50
µA
VB = VS = 50V
VCC Shutdown Supply Current
ICCSD
–
0
1
µA
VIN = 0V or 5V, VEN = 0V
VCC Quiescent Supply Current
ICCQ
–
0.32
0.5
mA
VIN = 0V or 5V,
RDT = 100kΩ
VCC Operating Supply Current
ICCOP
–
2.1
–
mA
fs = 500kHz
VBS Quiescent Supply Current
IBSQ
–
62
100
µA
VIN = 0V or 5V
VBS Operating Supply Current
IBSOP
–
1.1
–
mA
fs = 500kHz
Logic “1” Input Bias Current
IIN+
–
25
60
µA
VIN = 5V
Logic “0” Input Bias Current
IIN-
–
0
1
µA
VIN = 0V
VBS Supply Undervoltage Positive Going Threshold
VBSUV+
5.9
6.9
7.9
V
–
VBS Supply Undervoltage Negative Going Threshold
VBSUV-
5.6
6.6
7.6
V
–
VCC Supply Undervoltage Positive Going Threshold
VCCUV+
5.9
6.9
7.9
V
–
VCC Supply Undervoltage Negative Going Threshold
VCCUV-
5.6
6.6
7.6
V
–
Output High Short-Circuit Pulsed Current
IO+
0.9
1.25
–
A
VO = 0V, PW ≤ 10µs
Output Low Short-Circuit Pulsed Current
IO-
1.5
2.0
–
A
VO = 15V, PW ≤ 10µs
Forward Voltage of Bootstrap Diode
VF1
–
0.27
–
V
IF = 100µA
Forward Voltage of Bootstrap Diode
VF2
–
0.8
–
V
IF = 100mA, PW ≤ 10ms
Note: 8. The VIN and IIN parameters are applicable to the two logic pins: IN and EN. The VO and IO parameters are applicable to the respective output pins:
HO and LO.
AC Electrical Characteristics (VCC = VBS = 12V, COM = VS = 0V, CL = 1000pF, @TA = +25°C, unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
Turn-on Propagation Delay, HO & LO
tON
65
96
125
ns
RDT = 10kΩ
350
463
580
ns
RDT = 100kΩ
Turn-off Propagation Delay, HO & LO
tOFF
–
22
56
ns
–
Turn-on Rise Time
tR
–
17
35
ns
–
Turn-off Fall Time
tF
–
12
25
ns
–
Delay Matching
tDM
–
–
50
ns
–
Deadtime: tDT LO-HO & tDT HO-LO
tDT
40
70
100
ns
RDT = 10kΩ
300
430
560
ns
RDT = 100kΩ
Deadtime Matching
tMDT
–
–
50
ns
RDT = 100kΩ
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
Application Information
Bootstrap Capacitor Selection
The capacitance of the bootstrap capacitor should be high enough to provide the charge required by the gate of the high side MOSFET with only a
minimal loss of voltage across it. As a general guideline, it is recommended to make sure the charge stored by the bootstrap capacitor is about 50
times more than the required gate charge at operating VCC(usually about 10V to 12V).
The formula to calculate the change in VBS to provide a certain amount of gate charge is shown below;
Q = C * V where Q is the gate charge required by the external MOSFET to raise its gate voltage to 10V. C is the bootstrap capacitance and V is
the voltage drop across the Vbs.
Example: To switch a high side MOSFET that requires 20nC of gate charge to raise its gate voltage to 10V, the capacitor size can be calculated
as below;
QG(MOSFET) = C(BOOTSTRAP) * ∆VBS ;
∆VBS = voltage drop acorss the bootstrap capacitor while providing the required gate charge.
In this example, let‟s say the acceptable ∆VBS is 200mV.
The required bootstrap capacitor for the job is;
C(BOOTSTRAP) = QG(MOSFET)/ ∆VBS = 20nC/200mV = 100nF
Bootstrap Diode Current
The DGD0506 comes with an integrated bootstrap Schottky diode. The forward characteristics of the diode is shown in the figure 28. The
maximum recommended operating current is 400mA pulsed. Under steady state conditions the only current flowing through the internal diode is
the charge current required by the highside MOSFET‟s gate capacitance, however, it is important to cover applications where the inrush current
exceeds this rating. In such applications to limit the current flowing through the internal diode to the recommended value, two techniques are
suggested as shown in figures 29 and 30.
Figure 28. DGD0506 „Internal Diode + Internal Resistor‟ VF vs. IF
Pre-Bias Resistor between Vs and COM
This technique eliminates the inrush current, altogether, by pre-charging the capacitor to a value close to VCC before the DGD0506 is enabled and
an input signal is applied. By pre-charging the capacitor to VCC only a small steady state current flows through the internal diode eliminating the
need for any external diode. The recommended range for the Rs is 10kΩ to 100kΩ.
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
Application Information (Cont.)
External Diode and Resistor:
To enable appropriate current sharing and limit the internal bootstrap current to less than 400mA, a Schottky diode must be used as an external
diode. The voltage drop across the external diode and resistor must be limited to 2.4V, to limit the internal diode‟s current share to <400mA. Hence
it is important to choose an appropriate external diode and resistor combination. At any observed inrush current peak, it is important that the
combined voltage drop of the external resistor and diode is less than 2.4V.
For internal diode current to be <400mA; (IINRUSH * REXT) + (VfEXT @ IINRUSH) < 2.4V.
Figure 30. Current into the boost-strap capacitance is
shared between the external diode and the internal Diode
Figure 29. Inrush current is greatly limited by pre-
charging the boost-strap Capacitor through Rs
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
W-DFN3030-10 (Type TH)
AA1 A3
Seating Plane
D
E
e1
D2
e
b
E2
L
h
h
W-DFN3030-10
(Type TH)
Dim
Min
Max
Typ
A
0.70
0.80
0.75
A1
--
0.05
0.02
A3
0.18
0.25
0.20
b
0.18
0.30
0.25
D
2.90
3.10
3.00
D2
2.40
2.60
2.50
e
0.50BSC
e1
2.00BSC
E
2.90
3.10
3.00
E2
1.45
1.65
1.55
h
0.20
0.30
0.25
L
0.30
0.50
0.40
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
W-DFN3030-10 (Type TH)
Dimensions
Value
(in mm)
C
0.500
X
0.300
X1
2.300
X2
2.600
Y
0.600
Y1
3.300
Y2
1.650
Note : For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance
distances between device Terminals and PCB tracking.
X
Y1
Y
C
X1
X2
Y2
NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
DGD0506
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DGD0506
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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NOT RECOMMENDED FOR NEW DESIGN
USE DGD0506A
