Transistors (Cont.) Space Saving Devices Discrete Devices Maximum Ratings Electrical Characteristics @ 25C Ambient Pp Hee @lc VceE(Sat) @Ic/lg | Frequency Type Polarity One | Bath Vee | Vce | Ves ft Package Side | Sides | Volts] Volts | Volts Min/Max mA Volts | mA/mA Min mW mw MHz DIP and Flat Pack Quads (Contd.) SP37630D PNP 500 | 800 60 60 5 20/80 1000 0.8 |1000/100 "150 TO-116 SP37630F PNP 400 | 500 60 60 5 20/80 1000 0.9 |1000/100 150 TO-86 Plastic Quad DIP SP37250DB NPN 650 | $00 80 50 6 20/ 500 0.5 | 500/50 200 TO-116 SP3467ADB PNP 650 | $00 40 40 5 20/- 500 0.5 } 500/50 150 TO-116 Core Drivers Maximum Ratings Electrical Characteristics @ 25C Type Polari Pp Hre @! VeeE(Sat) tc/ fj Con} t torr | Package me | ae | YB] VEE] VER Tan ma woe] malma]MH2| oF | os lime | mW Ons] Noles] volts Min | Max | Max { Max 2N3244 PNP 1000 40 |} 40 5 50/150 500 | 0.5 500/50 175} 25 | 50 | 185 | 70-39 2N3245 PNP 1000 50 | 50 5 30/90 500 | 0.6 500/50 150} 25 | 55 | 165 7 T0-39 2N3252 NPN 1000 60 | 30 5 30/90 500 | 05 900/50 | 200 | 12 | 45 70 | TO-39 2N3253 NPN 1000 75 | 40 5 25/75 375 | 0.6 500/50 175] 12) 50 70 | T0-39 2N3444 NPN 1000 80 | 50 5 20/60 500 | 0.6 500/50 150} 12 } 50 70 | T0-39 2N3467 PNP 1000 40 | 40 5 40/120 500 | 0.5 500/50 175 | 25 | 40 90 | T0-39 2N3468 PNP 1000 50 | 50 5 25/75 500 | 0.6 500/50 150} 25 | 40 90 | TO0-39 2N3554 NPN 800 60 | 30 5 25/100 750 | 0.7 750/75 1 150] 25 |] 50) 105 ) T1039 2N3722 NPN 80a 80 ; 60 6 40/150 100 | 6.5 500/50 | 300; 10 {| 50 { 100 | TQO-39 2N3724 NPN 1000 50 | 30 6 60/150 100 | 0.75 | 1000/100 | 300} 12 | 35 60 | TO-39 2N3724A NPN 1000 50 | 30 6 60/150 100 | 0.75 | 1000/100 | 300 | 12 | 35 60 | T0-39 2N3725 NPN 1000 80 50 6 60/150 100 | 0.95 | 1000/100 | 300} 10 35 60 | TQ-39 2N3725A NPN 1000 80 50 6 60/150 100 | 0.95 | 1000/100 | 300} 10 35 60 | T0-39 2N3734 NPN 1000 50 | 30 5 30/120 1000 | 0.9 | 1000/100 | 300 9] 48 60 | T0-39 2N3735 NPN 1000 75 1 50 5 20/80 1000 | 0.9 | 1000/100 | 250 9 | 48 60 | TO-39 2N3736 NPN 500 50 | 30 5 30/120 1000 | 0.5 500/50 | 300 9 | 48 60 | TO46 2N3737 NPN 500 715 50 5 20/80 1000 | 0.5 500/50 250 9 48 60 | TO46 2N3762 PNP 1000 40 | 40 5 30/100 1000 | 0.9 1000/100 | 180} 15 | 45 | 105 | TQ-39 2N3763 PNP 1000 60 | 60 5 20/80 1000 | 0.9 | 1000/100 | 150 | 15 | 45 | 105 | T0-39 2N3764 PNP 500 40 |} 40 5 30/120 1000 | 0.5 500/50 180} 15 | 43 ] 115 | TO46 2N3830 NPN 1000 80 | 50 5 30/ 500 | 0.5 200/20 | 200] 12 | 60 70 | TO-39 2N3831 NPN 1000 70 }) 40 5 35/- 500 | 0.5 500/50 | 200 | 12 | 60} 70 | TG-39 2N4046 NPN 800 50 | 30 6 40/150 100 | 0.42 | 500/50 | 250} 12 | 35 60 } 10-39 2N4047 NPN 800 80 | 50 6 40/150 100 | 0.52 } 500/50 | 250} 10 | 35 60 | TO39 2N5022 PNP 1000 50 | 50 5 25/100 500 | 0.8 | 1000/100 | 170; 25 | 40 90 | TO0-39 2N5023 PNP 1000 30 | 30 5 40/100 500 | 0.7 | 1000/100 | 200} 25 } 40 90 | T0-39 2N5146 PNP 400 40 | 40 5 20/- 1000 | 1.0 1000/100 | 150} 20 | 40 } 110 | TO-86 3-12 Discrete Devices a ae Beam Lead Chips Transistor Chips 100% Probed Parameters @ 25C (Partial List) . ft Mech, Function Polarity Type Similar BVcBO BVCEO BVERO Hre @ tc Vce(Sat) @ Ic/lp MHz | Qutline Ident: EtA Type Volts Volts Volts Volts ; Code . . Min/Max | mA mA/mA | Min | Owg. Min @ 1020 | Min @ 10 mA | Min @ 10uA Max Low Level NPN | BT929 2N929 45 45 5 40/120 0.01) 0.35 10.1 60 1 RL Amplifier NPN | BT930 2N930 45 45 5 100/500 0.01) 0.35 1/0.1 60 1 RL NPN | BT2483 | 2N24B3 60 60 6 40/120 0.01} 0.35 1/0.4 60 1 RL NPN |BT2484 | 2N24B4 60 60 6 100/500 0.01] 0.35 1/0.1 60 1 RL PNP | BT2604 | 2N2604 60 45 6 40/120 9.01) 0.5 10/05 80 1 SP PNP |BT2605 | 2N2605 60 45 6 400/300 0.01) 0.5 10/0.5 | 100 1 SP PNP | BT3250A | 2N3250A 60 60 5 50/150 10.0 | 0.5 50/5.0 | 250 1 SB PNP} BTI9OG | 2N39N6 40 40 5 100/300 10.0 | 0.4 60/5.0 | 250 q so Medium NPN |B12222 | 2N2222 60 30 5 100/300 | 150 1.6 500/50 250 1 RB Current NPN | BT2222A | 2N2222A 75 40 6 100/300 { 150 1.0 500/50 300 1 RB Amplifiers PNP |BT2907 | 2N2907 60 40 5 100/300 | 150 1.6 500/50 200 1 SB PNP | BT2907A | 2N2907A 60 60 5 100/300 | 150 1.6 500/50 200 1 SB NPN |BT3700 |2N3700 |140@0.1mA} 86@30mA | 7@0.i mA } 100/300 | 150 0.5 500/50 100 2 RG RF/UHF NPN 1 BT918 2N918 30@1uA 15@3mA 3 20/- 3 | 0.4 10/1.0 | 600 1 RV Amplifiers NPN |BT2708 | 2N2708 35@ 1A 20@3 mA 3 30/200 2 0.4 10/1.0 - 7, 1 RV NPN | BT3960 | 2N3960 20 12 45 40/200 10 0.3 30/3.0 | 1600 1 RC PNP |8T4260 | 2N4260 1 16 45 30/150 10 0.35 10/1.0 | 1600 1 sc NPN |BT5109 | 2N5109 40 20@5 mA 3 40/120 | 350 - - 1200 1 RE High-Speed NPN | BT708 2N708 40 16 5 30/120 10 04 10/1.0 | 500 1 RJ Switches NPN | BT2369A | 2N2369A 40 16 5 40/120 10 0.5 100/16 500 1 RJ NPN [813227 | 2N3227 40 20 6 100/300 10 05 100/10 500 1 RJ High-Voltage NPN | BT3501 | 2N3501 140 140 6 100/300 | 150 a5 150/15 100 2 RF Switches PNP | BT3635 | 2N3635 140 440 8 490/300 } 150 as 450/15 100 2 SF Core Driver NPN |B73725 | 2N3725 80 50 6 60/150 | 100 | 0.95 |1000/100 ; 300 2 RK Choppers PNP |BT2944 | 2N2944 15 @ 0.1 nA - 16 @Q.1nA 80/- 1.0 10.2 10/2.0 - 1 SY PNP |BT2946 | 2N2946 | 40@0.5nA - 40@0.5nA | 30/- 1.0 | 0.2 10/20 } - 1 SY Power NPN |e8T3993 | 2N3999 [100@0.1mA] 50@30mA | 6@0.1mA | 40/ [1000 | 0.7 }1000/100 | - 3 | RH 1. This Identiticatin Code is etched into the back of the chip. FET Chips V VDS(ON) By \ Inss Vos=t5v, | fds on) Vas =0 Mech. Raytheon Similar GSS GSS Vps = 15V os ter |) Veg =0, : ident Type EIA Type Ig=-1yA Vass = -20V mA Ip = 0.5 nA f=1kHz Max Ip =mA Outline Code? Valts pA Min/Max Volts Ohms Volts Dwg. _ Min/Max BT 4856 2N4856 -40 -250 50/ ~4/-10 25 0.75 20 1 NC BT4857 2N4857 -40 -250 20/100 -2/-6 40 0.5 10 1 NC BT 4858 2N4858 -40 ~250 8/80 -0.8/4 60 0.5 5 1 NC . This Identification Code is etched into the back of the chip. 3-22