1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES * Low thermal impedance * High case temperature * Excellent reliability * Maximum design flexibility * Can be made to meet stringent military, aerospace and other high reliability requirements DO-203AB (DO-5) * Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY IF(AV) 15 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2 t TEST CONDITIONS UNITS 15 (1) A 150 TC (1) 50 Hz 239 60 Hz 250 (1) 50 Hz 286 60 Hz 260 I2t VRRM VALUES C A A2 s A2s 3870 Range TJ 50 to 600 V - 65 to 175 C Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TJ = - 65 C TO 175 C) V VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = - 65 C TO 175 C) V 1N3208 50 (1) 50 (1) 1N3209 100 (1) 100 (1) 1N3210 200 (1) 200 (1) 1N3211 300 (1) 300 (1) 400 (1) 400 (1) 500 (1) 500 (1) 600 (1) 600 (1) TYPE NUMBER 1N3212 1N3213 1N3214 Notes (1) JEDEC registered values * Basic type number indicates cathode to case. For anode to case, add "R" to part number, e.g. 1N3208R, 1N3209R Document Number: 93496 Revision: 25-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature SYMBOL IF(AV) TEST CONDITIONS 180 sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Maximum peak one cycle non-repetitive surge current IFSM Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing t = 8.3 ms I2 t t = 10 ms Maximum I2t for individual device fusing I2t Maximum for individual device fusing Maximum forward voltage drop Maximum average reverse current I2t (2) VFM IR(AV) UNITS 15 (1) A 150 Following any rated load condition and with rated VRRM applied (1) C 239 250 (1) A Following any rated load condition and with VRRM applied following surge = 0 284 With rated VRRM applied following surge, initial TJ = 150 C 286 With VRRM = 0 following surge, initial TJ = 150 C t = 8.3 ms VALUES 297 260 A2s 403 368 t = 0.1 ms to 10 ms, VRRM = 0 following surge 3870 A2s IF(AV) = 15 A (47.1 A peak), TC = 150 C 1.5 (1) V Maximum rated IF(AV) and TC = 150 C 10 (1) mA Notes (1) JEDEC registered values (2) I2t for time t = I2t x t x x THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg VALUES UNITS - 65 to 175 (1) C Maximum internal thermal resistance, junction to case RthJC DC operation 0.65 Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased 0.25 C/W Not lubricated thread, tighting on nut (2) Lubricated thread, tighting on nut Maximum allowable mounting torque (+ 0 %, - 10 %) 3.4 (30) (2) Not lubricated thread, tighting on hexagon 2.3 (20) (3) 4.2 (37) Lubricated thread, tighting on hexagon (3) Weight Case style JEDEC 3.2 (28) 28.5 g 1 oz. DO-203AB (DO-5) Notes (1) JEDEC registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93496 Revision: 25-May-09 1N3208 Series Stud-Mounted Vishay High Power Products Silicon Rectifier Diodes, 15 A 120 Average Forward Power Loss Over Full Cycle (W) Average Forward Current Over Full Cycle (A) 35 30 O Conduction period DC 25 20 180 15 120 10 60 5 0 110 120 80 DC 70 60 50 TJ = 140 C 40 30 O 20 Conduction period 10 0 120 130 140 150 160 170 Average Forward Power Loss Over Full Cycle (W) 150 60 Hz 100 6 8 10 20 104 50 60 70 80 90 120 180 103 60 TJ = 140 C DC 102 O Conduction period 10 40 60 102 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses Instantaneous Forward Current (A) 40 105 200 4 30 Fig. 3 - Maximum Low Level Forward Power Loss vs. Average Forward Current At any rated load condition and with rated VRRM following surge 2 20 Average Forward Current Over Full Cycle (A) 250 50 Hz 10 0 180 Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature Peak Half Sine Wave Forward Current (A) 180 90 Maximum Allowable Case Temperature (C) 1 60 100 103 104 Average Forward Current Over Full Cycle (A) Fig. 4 - Maximum High Level Forward Power Loss vs. Average Forward Current 103 102 TJ = 140 C 10 TJ = 25 C 1 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Fig. 5 - Maximum Forward Voltage vs. Forward Current LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93496 Revision: 25-May-09 www.vishay.com/doc?95360 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) O 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) O 4.10 (0.16) O 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX. 10.8 (0.43) 11.4 (0.45) 10.7 (0.42) 11.5 (0.45) 1/4" 28UNF-2A for metric devices: M6 x 1 1.0 (0.04) MAX. Document Number: 95360 Revision: 29-Sep-08 17.40 (0.68) MIN. Across flats For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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