MJD42C1G - ON Semiconductor

 Semiconductor Components Industries, LLC, 2012

February, 2012 − Rev. 11

1Publication Order Number:

MJD41C/D

MJD41C,

NJVMJD41CT4G (NPN),

MJD42C,

NJVMJD42CT4G,

NJVMJD42CRLG (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

Straight Lead Version in Plastic Sleeves (“1” Suffix)

Electrically Similar to Popular TIP41 and TIP42 Series

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

These are Pb−Free Packages*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SILICON

POWER TRANSISTORS

6 AMPERES

100 VOLTS, 20 WATTS

DPAK−3

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAMS

A = Assembly Location

Y = Year

WW = Work Week

J4xC = Device Code

x = 1 or 2

G=Pb−Free Package

AYWW

J4xCG

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

AYWW

J4xCG

http://onsemi.com

DPAK DPAK−3

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP)

http://onsemi.com

2

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 100 Vdc

Collector−Base Voltage VCB 100 Vdc

Emitter−Base Voltage VEB 5 Vdc

Collector Current

Continuous

Peak

IC6

10

Adc

Base Current IB2 Adc

Total Power Dissipation

@ TC = 25C

Derate above 25C

PD20

0.16

W

W/C

Total Power Dissipation (Note 1)

@ TA = 25C

Derate above 25C

PD1.75

0.014

W

W/C

Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 6.25 C/W

Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 C/W

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP)

http://onsemi.com

3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

−

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎÎ

50

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 100 Vdc, VEB = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

−

ÎÎÎÎ

10

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

0.5

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.3 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

30

15

ÎÎÎÎ

−

75

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 6 Adc, IB = 600 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

1.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 6 Adc, VCE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎÎ

2

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product (Note 3)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

fT

ÎÎÎÎ

3

ÎÎÎÎ

−

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

20

ÎÎÎÎ

−

ÎÎÎÎ

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. fT = hfe ftest.

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD41CRLG DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

MJD41CT4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

NJVMJD41CT4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

MJD42CG DPAK

(Pb−Free)

369C 75 Units / Rail

MJD42C1G DPAK−3

(Pb−Free)

369D 75 Units / Rail

MJD42CRLG DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

NJVMJD42CRLG DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

MJD42CT4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

NJVMJD42CT4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP)

http://onsemi.com

4

6

0.06

IC, COLLECTOR CURRENT (AMP)

0.2 0.4 4

20

7

500

hFE, DC CURRENT GAIN

VCE = 2 V

TJ = 150C

70

0.3 1

25C

-55C

10

0.1 0.6 2 6

25

Figure 1. Power Derating

T, TEMPERATURE (C)

050 75 100 125 150

15

10

TC

5

20

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

IC, COLLECTOR CURRENT (AMP)

0.1

t, TIME (s)

5

3

2

1

ts

0.7

0.5

0.3

0.2

tf

2

IC, COLLECTOR CURRENT (AMP)

TJ = 25C

VCC = 30 V

IC/IB = 10

t, TIME (s)

1

0.7

0.5

0.3

0.2

tr

0.1

0.07

0.05

0.03

td @ VBE(off)  5 V

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

1.2

0.8

V, VOLTAGE (VOLTS)

2

1.6

0.4

0

VBE(sat) @ IC/IB = 10

2.5

0

1.5

1

TA

0.5

2

300

200

100

50

30

50.02

0.06 0.2 0.4 41

0.1 0.6 2 6

TJ = 25C

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.06 0.2 0.4 40.3 1

0.1 0.6 2 6 0.06 0.2 0.4 41

0.1 0.6 2

Figure 4. Turn−On Time

Figure 5. “On” Voltages Figure 6. Turn−Off Time

TJ = 25C

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 10

+11 V

25 ms

0

-9 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf  10 ns

DUTY CYCLE = 1%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

MSB5300 USED ABOVE IB  100 mA

MSD6100 USED BELOW IB  100 mA

REVERSE ALL POLARITIES FOR PNP.

3

TC

TA SURFACE MOUNT

0.07

0.05

TYPICAL CHARACTERISTICS

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP)

http://onsemi.com

5

C, CAPACITANCE (pF)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

t, TIME (ms)

0.01

0.01 0.05 1 2 5 10 20 50 100 200 5000.1 0.50.2 100

0

0.03 0.3 3 30 3000.02

2.5 A

Figure 7. Collector Saturation Region

IB, BASE CURRENT (mA)

1.2

0.4

0

10

2

0.8

TJ = 25C

1.6

IC = 1 A

Figure 8. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Cob

0.5

50

2 5 20 50

1

0.2

0.1

0.05

r(t), EFFECTIVE TRANSIENT THERMAL

RqJC(t) = r(t) RqJC

RqJC = 6.25C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 9. Thermal Response

0.5 D = 0.5

5 A

1000500300200100503020

300

30

70

100

200

1 3 10 30

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

TJ = 25C

Cib

IC, COLLECTOR CURRENT (AMP)

10

70

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01 10

0

1

0.3

3

0.1

0.03

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

Figure 10. Maximum Forward Bias

Safe Operating Area

TC = 25C SINGLE PULSE

TJ = 150C

dc

0.5

2

5

1ms

MJD41C, 42C

5030201075321

0.05

100ms

CURVES APPLY BELOW RATED VCEO

5ms

500msThere are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 10 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk) v 150_C. TJ(pk) may be calculated from the data in

Figure 9. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP)

http://onsemi.com

6

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

b

D

E

b3

L3

L4

b2

eM

0.005 (0.13) C

c2

A

c

C

Z

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

4

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

A1

H

DETAIL A

SEATING

PLANE

A

B

C

L1

L

H

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP)

http://onsemi.com

7

PACKAGE DIMENSIONS

123

4

V

SA

K

−T−

SEATING

PLANE

R

B

F

G

D3 PL

M

0.13 (0.005) T

C

E

J

H

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D−01

ISSUE C

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD41C/D

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