Description
Features
nPLANAR PROCESS
n200 mW POWER DISSIPATION
Mechanical Dimensions
nINDUSTRY STANDARD SOT-23
PACKAGE
nMEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25 OC.
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
FMBBAS19...21
Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
FMBBAS19...21
Units
Volts
Volts
Page 10-25
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Forward Voltage...VF
@ IF = 100 mA
DC Reverse Current...IR @ VR = 70V
Power Dissipation...PD
Reverse Recovery Time...tRR
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
............................................. 625 ...............................................
............................................. 2.5 ...............................................
............................................. 1.0 ...............................................
............................................. 0.1 ...............................................
............................................. 200 ...............................................
............................................. 5 0 ...............................................
......................................... -25 to 85 ..........................................
......................................... -65 to 150 ..........................................
mAmps
Amps
Volts
µAmps
mW
nS
°C
°C
FMBBAS19 FMBBAS20 FMBBAS21
120 200 250
100 150 200
.110
.060
.037
.037
.115
.016
.043
.004
.016
1
2
3
Pin 2
Pin 3
Pin 1 NC
PVV = 100nS
Device Under TDevice Under T
Device Under TDevice Under T
Device Under Testest
estest
est
50 Ohms
5K Ohms
RG = 50 Ohms
.01 uF
IF
Output
Trr
IR
0.1 IR
