ON Semiconductor NPN Complementary Silicon Power Transistors TIP3055 PNP TIP2955 . . . designed for general-purpose switching and amplifier applications. * DC Current Gain -- * * 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS hFE = 20-70 @ IC = 4.0 Adc Collector-Emitter Saturation Voltage -- VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent Safe Operating Area IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage VCER 70 Vdc Collector-Base Voltage VCB 100 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current -- Continuous IC 15 Adc Base Current IB 7.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 90 0.72 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit Thermal Resistance, Junction to Case RJC 1.39 C/W Thermal Resistance, Junction to Ambient RJA 35.7 C/W Operating and Storage Junction Temperature Range CASE 340D-02 THERMAL CHARACTERISTICS Characteristic hFE , DC CURRENT GAIN 1000 VCE = 4.0 V TJ = 25C 100 10 0.1 TIP3055 TIP2955 0.2 0.5 0.7 1.0 0.3 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain Semiconductor Components Industries, LLC, 2002 January, 2002 - Rev. 5 1 Publication Order Number: TIP3055/D TIP3055 TIP2955 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 -- Vdc Collector Cutoff Current (VCE = 70 Vdc, RBE = 100 Ohms) ICER -- 1.0 mAdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO -- 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) ICEV -- 5.0 mAdc Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO -- 5.0 mAdc 20 5.0 70 -- -- -- 1.1 3.0 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) -- 1.8 Vdc Is/b 3.0 -- Adc Current Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 -- MHz Small-Signal Current Gain (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) hfe 15 -- kHz SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 30 Vdc, t = 1.0 s; Nonrepetitive) DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. IC, COLLECTOR CURRENT (AMPS) 100 50 30 20 1.0ms 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. 300 s dc 10ms SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C TJ = 150C 2.0 4.0 6.0 10 20 40 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 2 TIP3055 TIP2955 PACKAGE DIMENSIONS CASE 340D-02 ISSUE E C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G http://onsemi.com 3 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 TIP3055 TIP2955 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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