TIP3055 TIP2955
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2
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
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Characteristic
Symbol
Min
Max
Unit
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OFF CHARACTERISTICS
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Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ÎÎÎ
VCEO(sus)
Î
60
ÎÎ
—
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 70 Vdc, RBE = 100 Ohms)
ICER
—
1.0
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ÎÎÎ
ICEO
Î
—
ÎÎ
0.7
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎ
ICEV
Î
—
ÎÎ
5.0
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
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ON CHARACTERISTICS (1)
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DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎ
ÎÎÎ
hFE
Î
Î
20
5.0
ÎÎ
ÎÎ
70
—
Î
Î
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎ
VCE(sat)
Î
—
—
ÎÎ
1.1
3.0
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎ
VBE(on)
Î
—
ÎÎ
1.8
Î
Vdc
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
ÎÎÎ
Is/b
Î
3.0
ÎÎ
—
Î
Adc
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DYNAMIC CHARACTERISTICS
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Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎ
fT
Î
2.5
ÎÎ
—
Î
MHz
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Small–Signal Current Gain
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
ÎÎÎ
hfe
Î
15
ÎÎ
—
Î
kHz
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
IC, COLLECTOR CURRENT (AMPS)
10
5.0
0.1
0.3
2.0
3.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 2.0 4.0 6.0 10 20
0.2
0.5
1.0
20
30
50
100
40 60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
TJ = 150°C
300 µs
1.0ms
10ms
dc
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.