Preliminary BT139-600 SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol Features 2.T2 Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC ) 1.T1 3.Gate TO-220 General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 Absolute Maximum Ratings Symbol Parameter Condition Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC = 100C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2t for fusing t =10ms PGM PG(AV) 3 ( TJ = 25C unless otherwise specified ) VDRM I2 t 2 Peak Gate Power Dissipation Average Gate Power Dissipation Over any 20ms period Ratings Units 600 V 16 A 145/155 A 105 A2 s 5.0 W 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V Operating Junction Temperature - 40 ~ 125 C Storage Temperature - 40 ~ 150 C 2.0 g TJ TSTG Mass Nov, 2003. Rev. 0 1/6 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. BT139-600 Electrical Characteristics Symbol Items Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 C 2.0 mA VTM Peak On-State Voltage IT = 20 A, Inst. Measurement 1.6 V 25 25 I+GT1 I -GT1 Gate Trigger Current VD = 6 V, RL=10 mA I -GT3 25 I+GT3 100 V+GT1 1.5 V-GT1 1.5 Gate Trigger Voltage VD = 6 V, RL=10 V V-GT3 1.5 V+GT3 2.0 VGD (dv/dt)c IH Rth(j-c) 2/6 Conditions Non-Trigger Gate Voltage TJ = 125 C, VD = 1/2 VDRM 0.2 V Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 10 V/ 20 mA 1.2 C/W Holding Current Thermal Impedance Junction to case BT139-600 Fig 1. Gate Characteristics Fig 2. On-State Voltage 2 10 VGM (10V) 1 On-State Current [A] PGM (5W) PG(AV) (0.5W) 25 IGM (2A) Gate Voltage [V] 10 0 10 o TJ = 125 C 1 10 o TJ = 25 C 0 10 VGD (0.2V) -1 10 1 2 10 0.5 3 10 10 1.0 1.5 3.0 3.5 130 20 Allowable Case Temperature [ oC] 25 Power Dissipation [W] 2.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation o = 180 o = 150 2 = 120 360 15 : Conduction Angle 10 = 90 o = 60 o = 30 o o 5 0 0 2 4 6 8 10 12 14 16 18 125 120 = 30 115 110 2 o = 60 o = 90 o o 105 = 120 o = 150 o = 180 360 : Conduction Angle 100 95 20 0 4 8 RMS On-State Current [A] 12 16 20 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 200 150 o 50 0 0 10 o VGT (t C) 60Hz 100 VGT (25 C) Surge On-State Current [A] 2.0 On-State Voltage [V] Gate Current [mA] 1 50Hz 1 10 Time (cycles) 2 10 0.1 -50 0 50 100 150 o Junction Temperature [ C] 3/6 BT139-600 Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 o o IGT (t C) IGT (25 C) o Transient Thermal Impedance [ C/W] 10 I 1 I + GT1 _ GT1 I I 0.1 -50 0 50 _ GT3 + GT3 100 1 0.1 0.01 -3 10 150 -2 -1 10 0 10 o 1 10 10 Time (sec) Junction Temperature [ C] Fig 9. Gate Trigger Characteristics Test Circuit 10 10 6V A V 4/6 10 6V RG 10 A V 6V RG A V RG 6V A V Test Procedure Test Procedure Test Procedure Test Procedure RG BT139-600 TO-220 Package Dimension Dim. mm Typ. Min. 9.7 6.3 9.0 12.8 1.2 A B C D E F G H I J K L M N O Max. 10.1 6.7 9.47 13.3 1.4 Inch Typ. Min. 0.382 0.248 0.354 0.504 0.047 1.7 2.5 0.067 0.098 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 3.6 E B Max. 0.398 0.264 0.373 0.524 0.055 0.142 H A I F C M L G 1 D 2 1. T1 2. T2 3. Gate 3 J N O K 5/6