Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
VDRM Repetitive Peak Off-State Voltage 600 V
IT(RMS) R.M.S On-State Current TC = 100°C 16 A
ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive 145/155 A
I2tI2t for fusing t =10ms 105 A2s
PGM Peak Gate Power Dissipation 5.0 W
PG(AV) Average Gate Power Dissipation Over any 20ms period 0.5 W
IGM Peak Gate Current 2.0 A
VGM Peak Gate Voltage 10 V
TJOperating Junction Temperature - 40 ~ 125 °C
TSTG Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
Nov, 2003. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-Sta te Current ( IT(RMS)= 16 A )
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
2.T2
3.Gate
1.T1
Symbol
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BT139-600
SemiWell Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
UL : E228720
Preliminary
TO-220
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