MM 7929237 0029660 7 Mm | -2q_1\ kyz_ S&S; THOMSON BUZ11S2 BUZ11S2Fl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS S G S-THOMSON 30E D _ TYPE Voss Ros(on) Ip" _ BUZ11S2 60 V 0.04 2 30 A BUZ11S2Fi 60 V 0.04 2 20A e VERY LOW ON-LOSSES e LOW DRIVE ENERGY FOR EASY DRIVE HIGH TRANSCONDUCTANCEIC,,, RATIO INDUSTRIAL APPLICATIONS: e AUTOMATIVE POWER ACTUATORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch- TO-220 ISOWATT 220 ing times make these POWER MOS transistors ideal for high speed switching circuits in applica- tions such as power actuator driving, motor drive including brushless motors, hydraulic actuators and INTERNAL SCHEMATIC 0 many other uses in automotive applications. They DIAGRAM also find use in DC/DC converters and uninterrupt- ible power supplies. G s ABSOLUTE MAXIMUM RATINGS Vos Drain-source voitage (Ves = 0) 60 Vv Voar Drain-gate voltage (Reg = 20 KQ) 60 Vv Ves Gate-source voltage +20 Vv lom Drain current (pulsed) T, = 25C 120 A BUZ11S2 BUZ11S2FI Ip" Drain current (continuous) T, =30C 30 20 A Prot Total dissipation at T, <25C 75 35 WwW T stg Storage temperature 55 to 150 C Tj Max. operating junction temperature 150 c DIN humidity category (DIN 40040) E IEC climatic category (DIN IEC 68-1) 55/150/56 " See note on ISOWATT 220 in this datasheet June 1988 1/5 177 puziis2-suziiseri MM 7929237 002961 9 mm T-39-11 S$ G S-THOMSON 30E D THERMAL DATA* TO-220 | ISOWATT220 Rinj- case Thermal resistance junction-case max 1.67 | 3.57 C/W Rinj- amb Thermal resistance Junction-ambient max 75 CIN ELECTRICAL CHARACTERISTICS (T;=25C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. | Unit OFF Vier) pss Drain-source Ip= 250 pA Vesg= 0 60 Vv breakdown voltage lbss Zero gate voltage Vps = Max Rating 250 | pA drain current (Vgg=0) | Vpg= Max Rating Tj= 125C 1000} pA less Gate-body leakage Vas= +20 V +100] nA current (Vpg = 0) ON Ves ah Gate threshold Vos= Ves Ip= 1mA 2.1 4 Vv voltage Rpg on) Static drain-source Veg= 10 V Ip= 15A 0.04) on resistance DYNAMIC Ts . Forward Vos= 25 V Ip= 15A 4 mho transconductance Ciss Input capacitance 2000 | pF oss Output capacitance Vos= 25 V f= 1 MHz 1100) pF Ciss Reverse transfer Ves= 0 400 | pF capacitance SWITCHING ta (on) Turn-on time Vpp = 30 V IDp= 3A 45 ns t Rise time Res= 50 0 Ves = 10V 110 ns ta (ot Turn-off delay time 230 | ns t Fall time 170 | ns See note on ISOWATT 220 in this datasheet 2/5 . STA SGS-THOMSON 178 4 ; Me 79259237 OO2ecbb2e O BUZ11S2 - BUZ11S2Fi S G S=<THOMSON SOE D ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. | Typ. | Max. | Unit 7 T-39-11 SOURCE DRAIN DIODE Isp Source-drain current | T,= 25C 30 A SDM Source-drain current 120 A (pulsed) Vep Forward on voltage Isp= 60A Ves= 0 2.6 Vv tr Reverse recovery 200 ns time Qn Reverse recovered Isp= 30 A di/dt = 100A/ps 0.25 pC charge Safe operating areas (standard package) a9t 2 a Vos(Vi Output characteristics Al [y=200 50 40 30 20 6 12 a 4 5S VpslV) Thermal impedance Derating curve (standard package) (standard package) Zine 19 fo ar ola i rhe! 10? 107? 10 0 50 100 Teaset"C) tots) case Transfer characteristics Transconductance sired cceesT SptAl 0 2 a 6 8 Vgs() o $ 10 5 ofA) 3/5 47.3 179 BUz11S2-BUz11S2F1 | MM 7929237 O02%b Static drain-source on resistance IgglAt 10% 10! 10 415 40 50 tA} Capacitance variation Tease2 25C fs1MRz 3035 VgstV) Source-drain diode forward characteristics Tjs150C: 04 16 Ygpl) b3 2M) OT-39-11 , JOE D S$ G S-THOMSON Maximum drain current vs temperature Gate charge vs gate-source voltage IptAd Vgst) 20 40 60 400 Ogint) Tr (C) 0 Drain-source on resistance vs temperature Gate threshold voltage vs temperature Vesttty {norm} {norm} 12 is Vgg = 10 ps i5A Os -tC0 ~50 0 30 0 Ty CO} -50 0 foo) TyfC) 180 477 SGS:THOMSON mu BICREELECTROMIGS mm 7529237 OO24bG4 4 me ~ 3 G S=THOMSON ISOWATT220 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT220 is fully isolated to 2000V dc. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. The ISOWATT220 package eliminates the need for ex- ternal isolation so reducing fixing hardware. Accu- rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa- citance. ISOWATT220 thermal performance is better the that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT220 packages is determined by: T, - Te Rth from this Ipmax for the POWER MOS can be cal- culated: Pp lpmax< Rress ss denon DS(on) (at 150C) ISOWATT DATA Safe operating areas 2 * ca 10 Vast) Thermal impedance BUZ11S2 - BUZ11S2Fl JOE DD F-39-11 THERMAL IMPEDANCE UF ~ ISOWATT220 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT220 package. The total thermal resistance Ry, goy is the sum of each of these elements. The transient thermal impedance, Z,, for different pulse durations can be estimated as follows: 1 - for a short duration power pulse less than 1ms; Ztn< Rinsc 2 - for an intermediate power pulse of 5ms to 50ms: Zn= Pinsc 3 - for long power pulses of the order of 500ms or greater: Zn= Rinec + Pines + Rins-amb It is often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 Rth-c Rene-Hs RehHs-amb WA AA Derating curve Prost) 5O 40 30 cele hel x, 20 10! 10? tofst 477, 8&S:THOMSON . 5/5 ~ PELCRCELSCTRENES 181