LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 * Pb-Free Package is Available. 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER SOT- 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 50 V Collector-Base Voltage V CBO 60 V Emitter-Base Voltage V 7.0 V EBO ORDERING INFORMATION Device Collector Current -- Continuous IC 150 mAdc Collector power dissipation PC 0.2 W Junction temperature Tj 150 C Storage temperature T stg -55 ~+150 C DEVICE MARKING Marking Shipping L2SC2412KQLT1 BQ 3000 Tape & Reel L2SC2412KQLT1G BQ(Pb-Free) 3000 Tape & Reel L2SC2412KRLT1 BR 3000 Tape & Reel L2SC2412KRLT1G BR(Pb-Free) 3000 Tape & Reel L2SC2412KSLT1 G1F 3000 Tape & Reel L2SC2412KSLT1G G1F(Pb-Free) L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F 3000 Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Collector-Emitter Breakdown Voltage (IC = 1 mA) Emitter-Base Breakdown Voltage (IE = 50 A) Collector-Base Breakdown Voltage (IC = 50 A) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current Min Typ Max Unit V (BR)CEO 50 -- -- V V (BR)EBO 7 -- -- V V (BR)CBO 60 -- -- V I CBO -- -- 0.1 A I EBO -- -- 0.1 A V CE(sat) -- -- 0.4 V h FE 120 -- 560 -- fT -- 180 -- MHz C ob -- 2.0 3.5 pF (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= - 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 L2SC2412K*LT1-1/3 LESHAN RADIO COMPANY, LTD. L2SC2412K*LT1 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) 10 1 25C - 55C 50 T A = 100 C I C, COLLECTOR CURRENT (mA) 20 2 0.50mA 100 VCE= 6 V 0.5 T A = 25C 80 60 40 20 0.2 0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 -1.6 0.4 V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) 1.2 1.6 2.0 Fig.4 DC current gain vs. collector current ( ) 10 I C, COLLECTOR CURRENT (mA) 0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 h FE, DC CURRENT GAIN 8 6 4 2 200 100 50 20 0 0 4 8 12 16 10 20 0.2 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) h FE, DC CURRENT GAIN 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 100 200 2 5 10 20 50 100 200 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ) 500 1 I C, COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) L2SC2412K*LT1-2/3 LESHAN RADIO COMPANY, LTD. L2S2412K*LT1 Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 I C, COLLECTOR CURRENT (mA) 100 50 -5 -10 -20 -50 -100 I E, EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) 200 -2 5 10 20 50 100 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 500 -1 2 I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current -0.5 1 20 10 5 2 1 0.2 0.5 1 2 5 10 20 50 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) Fig.11 Base-collector time constant vs.emitter current 200 100 50 20 10 -0.2 -0.5 -1 -2 -5 -10 I E, EMITTER CURRENT (mA) L2SC2412K*LT1-3/3