LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
3
2
L2SC2412K*LT1
SOT– 23
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V CEO 50 V
Collector–Base V oltage V CBO 60 V
Emitter–Base V oltage V EBO 7.0 V
Collector Current — Continuous I C150 mAdc
Collector power dissipation P C0.2 W
Junction temperature T j150 °C
Storage temperature T stg -55
~
+150 °C
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CEO 50 — — V
(IC = 1 mA)
Emitter–Base Breakdown V oltage V(BR)EBO 7——V
(IE= 50 µA)
Collector–Base Breakdown V oltage V(BR)CBO 60 — — V
(IC = 50 µA)
Collector Cutoff Current ICBO — — 0.1 µA
(VCB = 60 V)
Emitter cutoff current IEBO — — 0.1 µA
(VEB = 7 V)
Collector-emitter saturation voltage VCE(sat) — — 0.4 V
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio h FE 120 –– 560 ––
(V CE = 6 V, I C= 1mA)
Transition frequency fT— 180 –– MHz
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance Cob — 2.0 3.5 pF
(V CB = 12 V, I E= 0A, f =1MHz )
hFE values are classified as follows:
QRS
hFE 120~270 180~390 270~560
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SC2412K*LT1-1/3
•Pb−FreePackage is Available.
Device Marking Shipping
L2SC2412KQLT1
L2SC2412KRLT1
L2SC2412KSLT1
L2SC2412KQLT1G
L2SC2412KRLT1G
L2SC2412KSLT1G
BQ
BR
G1F
BQ(Pb-Free)
BR(Pb-Free)
G1F(Pb-Free)
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
ORDERING INFORMATION