LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
3
2
L2SC2412K*LT1
SOT– 23
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V CEO 50 V
Collector–Base V oltage V CBO 60 V
Emitter–Base V oltage V EBO 7.0 V
Collector Current — Continuous I C150 mAdc
Collector power dissipation P C0.2 W
Junction temperature T j150 °C
Storage temperature T stg -55
~
+150 °C
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CEO 50 V
(IC = 1 mA)
Emitter–Base Breakdown V oltage V(BR)EBO 7—V
(IE= 50 µA)
Collector–Base Breakdown V oltage V(BR)CBO 60 V
(IC = 50 µA)
Collector Cutoff Current ICBO 0.1 µA
(VCB = 60 V)
Emitter cutoff current IEBO 0.1 µA
(VEB = 7 V)
Collector-emitter saturation voltage VCE(sat) 0.4 V
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio h FE 120 –– 560 ––
(V CE = 6 V, I C= 1mA)
Transition frequency fT 180 –– MHz
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance Cob 2.0 3.5 pF
(V CB = 12 V, I E= 0A, f =1MHz )
hFE values are classified as follows:
QRS
hFE 120~270 180~390 270~560
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SC2412K*LT1-1/3
Pb−FreePackage is Available.
Device Marking Shipping
L2SC2412KQLT1
L2SC2412KRLT1
L2SC2412KSLT1
L2SC2412KQLT1G
L2SC2412KRLT1G
L2SC2412KSLT1G
BQ
BR
G1F
BQ(Pb-Free)
BR(Pb-Free)
G1F(Pb-Free)
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
ORDERING INFORMATION
LESHAN RADIO COMPANY, LTD.
L2SC2412K*LT1
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
T
A
= 100°C
25°C
– 55°C
50
20
10
50
2
1
0.5
0.2
0.1 0 0.4 0.8 1.2 1.6 2.0
T A = 25°C
100
80
60
40
20
0
IC, COLLECTOR CURRENT (mA)
Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs.
collector current
VCE= 6 V
VBE ,BASE T O EMITTER VOLTAGE(V)
IC, COLLECTOR CURRENT (mA)
VCE ,COLLECTOR TO EMITTER VOLTAGE (V)
0 48121620
10
8
6
4
2
0
IC, COLLECTOR CURRENT (mA)
VCE ,COLLECTOR TO EMITTER VOLTAGE (V)
500
200
100
50
20
10
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
0.2 0.5 1 2 5 10 20 50 100 200
500
200
100
50
20
10
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
0.5
0.2
0.1
0.05
0.02
0.01
VCE(sat), COLLECTOR SATURATION VOLTAGE(V)
IC, COLLECTOR CURRENT (mA)
0.50mA
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
L2SC2412K*LT1-2/3
LESHAN RADIO COMPANY, LTD.
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
VCE(sat), COLLECTOR SATURATION VOLT AGE(V)
IC, COLLECTOR CURRENT (mA)
0.2 0.5 1 2 5 10 20 50 100
L2S2412K*LT1
Fig.9 Gain bandwidth product vs. emitter current
500
200
100
50
fr, TRANSITION FREQUENCY(MHz)
IE, EMITTER CURRENT (mA)
–0.5 –1 –2 –5 –10 –20 –50 –100
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
1
Cob , COLLECTOR OUTPUT CAPACIT ANCE( pF)
Cib , EMITTER INPUT CAPACIT ANCE (pF)
VCB, COLLECTOR TO BASE VOLTAGE (V)
VEB, EMITTER TO BASE VOLTAGE (V)
0.2 0.5 1 2 5 10 20 50
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02
0.01
VCE(sat), COLLECTOR SATURATION VOLT AGE(V)
IC, COLLECTOR CURRENT (mA)
0.2 0.5 1 2 5 10 20 50 100 200
0.5
0.2
0.1
0.05
0.02
0.01
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
Cc-rbb, BASE COLLECTOR TIME CONSTANT( ps)
IE, EMITTER CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10
L2SC2412K*LT1-3/3