Agilent HSCH-9162
Zero Bias Beamlead
Detector Diode
Data Sheet
Description
Agilent’s HSCH-9162 is a GaAs
beamlead detector diode,
fabricated using the modified
barrier integrated diode (MBID)
process[1]. This diode is designed
for zero bias detecting applica-
tions at frequencies through
110 GHz. It can be mounted in
ceramic microstrip (MIC), finline
and coplanar waveguide circuits.
Features
• Low junction capacitance
• Lower temperature coefficient
than silicon
• Durable construction —
typical 6 gram beamlead strength
• Operation to 110 GHz
Note 1:
The diode structure and process are covered by
U.S. Patent No. 4,839,709 issued to Mark
Zurakowski on June 13, 1989, and assigned to
Agilent.
ALL DIMENSIONS IN MICRONS.
231
(9.1)
250
(9.8)
250
(9.8)
120
(4.7)
231
(9.1)
Applications
At room temperature and fre-
quencies under 10 GHz, the
silicon zero bias Schottky detec-
tors HSMS-0005 and HSMS-2850
offer comparable performance.
However, the HSCH-9162 yields
virtually flat detection sensitivity
from 10 to 30 GHz with good
performance from 30 to 110 GHz.
In a wideband matched detector,
in which a shunt 50 Ω resistor is
used in front of the diode, voltage
sensitivity (γ) is calculated to be
1 mV/µW. Where a high-Q reac-
tive impedance matching network
is substituted for the shunt 50 Ω
resistor, values of γ approaching
25 mV/µW can be expected.
In applications below 10 GHz
where DC bias is not available
and where temperature sensitiv-
ity is a design consideration, the
HSCH-9162 offers superior
stability when compared to
silicon zero bias Schottky diodes.
Bonding and Handling
For more detailed information,
see Agilent Application Note 999,
“GaAs MMIC Assembly and
Handling Guidelines.”
Assembly Techniques
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 992, ”Beam Lead
Attachment Methods,” or Applica-
tion Note 993, “Beam Lead Device
Bonding to Soft Substrates.”
Small Signal Linear Model
0.011 pF
50 Ω
0.3 nH 0.035 pF
R
j
R
v
=
R
j +
R
s
HSCH-9162 Typical Performance
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage.
FORWARD CURRENT (mA)
0 0.2 0.4 0.6 1.0
0.8
16
14
12
10
8
6
4
2
0
TEMPERATURE (°C)
Figure 2. Typical Variation of Video
Resistance vs. Temperature.
VIDEO RESISTANCE (KΩ)
0102030 80
40 6050 70
Maximum
Typical
50 Ω
HSCH-9162 Absolute Maximum Ratings, TA = 25°C
Symbol Parameters/Conditions Units Min. Typ. Max.
Top Operating Temp. Range °C–65 175
Tstg Storage Temp. Range °C–65 200
PBBurnout Power dBm 20
DC Specifications/Physical Properties, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
CjJunction Capacitance pF .035
Test Conditions: f = 1 GHz
RVVideo Resistance kΩ1.8 7.5
Test Conditions: Zero Bias
γVoltage Sensitivity mV/µW 0.5
Test Conditions: Zero Bias, 10 GHz,
shunt 50 Ω input matching resistor
—Beamlead Strength grams 3
SPICE Parameters
Because of the high leakage of this
diode under reverse bias, it must
be modelled as an anti-parallel
pair.
D1
HSCH-9162
D2
D1 represents the characteristic of
the HSCH-9162 under forward
bias and D2 (in the forward
direction) gives the V-I curve of
the HSCH-9162 under reverse bias.
Parameter Units D1 D2
BVV10 10
CJO pF 0.030 0.030
EGeV 1.42 1.42
IBV A 10E-12 10E-12
ISA 12 x 10E-6 84 x 10E-6
N 1.2 40.0
RSΩ50 10
PB (VJ) V 0.26 0.26
PT (XTI) 2 2
M 0.5 0.5
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5988-5907EN
March 29, 2002
5988-6210EN
1.0
0.8
0.6
0.4
0.2
0
TEMPERATURE (°C)
Figure 3. Calculated Variation of Voltage
Sensitivity vs. Temperature.
GAMMA (mV/µW)
0102030 80
40 6050 70
50 Ω100 K
Frequency = 10 GHz
