Ultra Low Noise, Medium Current
E-PHEMT
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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Product Features
• Low Noise Figure, 0.5 dB
• Gain, 17 dB at 2 GHz
• High Output IP3, +30 dBm
• Output Power at 1dB comp., +20 dBm
• Medium Current, 30mA
• Wide bandwidth
• External biasing and matching required
• May be used as replacement a,b for Avago ATF-58143
Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN
Function Pin Number Description
Source 2 & 4 Source terminal, normally connected to ground
Gate 3 Gate used for RF input
Drain 1Drain used for RF output
General Description
SAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be-
low 2.5 GHz, and when combining this noise gure with high IP3 performance in a single device it makes
it an ideal amplier for demanding base station applications. We offer these units assembled into a com-
plete module, 50Ω in/out, noise matched and fully specied. For more information please see our TAMP
family of models on our web site.
SAV-581+
REV. C
M123887
ED-13377
SAV-581+
131015
0.45-6GHz
CASE STYLE: MMM1362
PRICE: $1.19 ea. QTY. (20)
simplified schematic and pin description
G A T E
S O U R C E
DR AIN
DR AIN 1
3 G A T E
4 S OU R C E
S OUR C E 2
SOT-343 (SC-70) PACKAGE
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical perfor-
mance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
b. The Avago
ATF-58143
part number is used for identication and comparison purposes only.
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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Symbol Parameter Condition Min. Typ. Max. Units
DC Specications
VGS Operational Gate Voltage VDS=3V, IDS=30 mA 0.28 0.39 0.5 V
VTH Threshold Voltage VDS=3V, IDS=4 mA 0.18 0.26 0.38 V
IDSS Saturated Drain Current VDS=3V, VGS=0 V 1.0 5.0 µA
GMTransconductance
VDS=3V, Gm=∆ IDS/∆VGS
∆VGS=VGS1-VGS2
VGS1=VGS at IDS=30 mA
VGS2=VGS1+0.05V
230 327 560 mS
IGSS Gate leakage Current VGD=VGS=-3V 200 µA
RF Specications, Z0=50 Ohms (Figure 1)
NF(1) Noise Figure VDS=3V, IDS=30 mA f=0.9 GHz 0.4
dB
f=2.0 GHz 0.5 0.9
f=3.9 GHz 0.8
f=5.8 GHz 1.5
VDS=4V, IDS=30 mA f=0.9 GHz 0.4
f=2.0 GHz 0.5
Gain Gain
VDS=3V, IDS=30 mA f=0.9 GHz 22.3
dB
f=2.0 GHz 15.0 17.0 18.5
f=3.9 GHz 12.0
f=5.8 GHz 8.3
VDS=4V, IDS=30 mA f=0.9 GHz 22.3
f=2.0 GHz 17.0
OIP3 Output IP3
VDS=3V, IDS=30 mA f=0.9 GHz 28.6
dBm
f=2.0 GHz 27.0 30.6
f=3.9 GHz 35.2
f=5.8 GHz 39.3
VDS=4V, IDS=30 mA f=0.9 GHz 27.8
f=2.0 GHz 30.3
P1dB(2) Power output at 1 dB
Compression
VDS=3V, IDS=30 mA f=0.9 GHz 18.5
dBm
f=2.0 GHz 19.0
f=3.9 GHz 19.2
f=5.8 GHz 18.1
VDS=4V, IDS=30 mA f=0.9 GHz 19.5
f=2.0 GHz 20.5
Notes:
(1) Includes test board loss (tested on Mini-Circuits TB-471+ test board)
(2) During Compression, IDS was allowed to increase.
(3) Operation of this device above any one of these parameters may cause permanent damage.
(4) Assumes DC quiescent conditions.
(5) IGS is limited to 2 mA during test.
Absolute Maximum Ratings(3)
Symbol Parameter Max. Units
VDS(4) Drain-Source Voltage 5V
VGS(4) Gate-Source Voltage -5 to 0.7 V
VGD(4) Gate-Drain Voltage -5 to 0.7 V
IDS(4) Drain Current 100 mA
IGS Gate Current 2 mA
PDISS Total Dissipated Power 500 mW
PIN(5) RF Input Power 17 dBm
TCH Channel Temperature 150 °C
TOP Operating Temperature -40 to 85 °C
TSTD Storage Temperature -65 to 150 °C
ΘJC Thermal Resistance 160 °C/W
Electrical Specications at TAMB=25°C, Frequency 0.45 to 6 GHz
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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Characterization Test Circuit
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent Noise Figure meter N8975A and Noise Source N4000A.
Conditions:
1. Drain voltage (with reference to source, VDS)= 3 or 4V as shown.
2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specication table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
5. No external matching components used.
Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”)
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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Typical Performance Curves
NOISE FIGURE vs IDS @ 0.9 GHz (1)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
15 20 25 30 35 40 45 50 55 60
IDS (mA)
NOISE FIGURE (dB)
VDS=3V VDS=4V
GAIN vs IDS @ 2 GHz (1)
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
GAIN (dB)
VDS=3V VDS=4V
NOISE FIGURE vs IDS @ 2 GHz (1)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
15 20 25 30 35 40 45 50 55 60
IDS (mA)
NOISE FIGURE (dB)
VDS=3V VDS=4V
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
F Min vs IDS @ 2 GHz (3)
0.25
0.27
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
F MIN (dB)
VDS=2V VDS=3V VDS=4V
F Min vs IDS @ 0.9 GHz (3)
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
F MIN (dB)
VDS=2V VDS=3V VDS=4V
I-V (VGS=0.1V PER STEP) (2)
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS (V)
IDS (mA)
0.2V 0.3V 0.4V 0.5V
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
GAIN vs IDS @ 0.9 GHz (1)
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24.5
25.0
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
GAIN (dB)
VDS=3V VDS=4V
P1dB vs IDS @ 2 GHz (1,4)
15
16
17
18
19
20
21
22
23
24
25
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
P1dB (dBm)
VDS=3V VDS=4V
P1dB vs IDS @ 0.9 GHz (1,4)
15
16
17
18
19
20
21
22
23
24
25
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
P1dB (dBm)
VDS=3V VDS=4V
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
NOISE FIGURE (dB)
-40°C +25°C +85°C
OIP3 vs IDS @ 0.9 GHz (1)
15
20
25
30
35
40
45
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
OIP3 (dBm)
VDS=3V VDS=4V
OIP3 vs IDS @ 2GHz (1)
15
20
25
30
35
40
45
10 15 20 25 30 35 40 45 50 55 60
IDS (mA)
OIP3 (dBm)
VDS=3V VDS=4V
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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GAIN vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
2
5
8
11
14
17
20
23
26
29
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
GAIN (dB)
-45°C +25°C +85°C
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=30mA
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
NOISE FIGURE (dB)
-40°C +25°C +85°C
GAIN vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=30mA
2
5
8
11
14
17
20
23
26
29
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
GAIN (dB)
-45°C +25°C +85°C
OIP3 vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=30mA
25
27
29
31
33
35
37
39
41
43
45
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
OIP3 (dBm)
-45°C +25°C +85°C
OIP3 vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
25
28
30
33
35
38
40
43
45
48
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
OIP3 (dBm)
-45°C +25°C +85°C
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
P1dB vs FREQUENCY & TEMPERATURE (1,4)
@ VDS=3V, IDS=30mA
15
16
16
17
18
19
19
20
21
21
22
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
P1dB (dBm)
-45°C +25°C +85°C
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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P1dB vs FREQUENCY & TEMPERATURE (1,4)
@ VDS=4V, IDS=30mA
15
16
17
18
19
20
21
22
23
24
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
P1dB (dBm)
-45°C +25°C +85°C
F Min vs FREQ @ VDS=3V (3)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
F MIN (dB)
20 mA 30 mA 40 mA
Notes:
Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based noise parameter (NP) test
system available from Maury Microwave. F Min, optimimum source reection coefcient and noise resistance values are calculated
values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was applied to ar-
rive at the presented data set.
S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um
pitch RF probes from GGB industries combined with customized thru-reect-line (TRL) calibration standards. The reference plane is
at the device package leads, as shown in the picture.
Fig 3. Reference Plane Location
Reference Plane Location for S and Noise Parameters (see data in pages 8 & 9)
(Refer to Application Note AN-60-040)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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Typical S-parameters, VDS=3V and IDS=30 mA (Fig. 3)
Freq.
(GHz)
S11 S21 S12 S22
MSG/MAG
(dB)Mag. Ang. Mag.
Mag
(dB) Ang. Mag. Ang. Mag. Ang.
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
-15
-10
-5
0
5
10
15
20
25
30
35
40
0 5 10 15 20
Frequency (GHz)
MSG/MAG and S21 (dB)
MSG/MAG
S21(dB)
Typical Noise Parameters, VDS=3V and IDS=30 mA (Fig. 3)
0.5 0.076 0.33 41.65 0.06 28.7
0.7 0.107 0.34 50.02 0.05 26.4
0.9 0.138 0.35 58.35 0.05 24.4
1.0 0.154 0.35 62.50 0.04 23.5
1.9 0.294 0.38 99.47 0.03 18.2
2.0 0.309 0.38 103.54 0.03 17.8
2.4 0.371 0.40 119.71 0.03 16.3
3.0 0.465 0.42 143.69 0.04 14.7
3.9 0.604 0.45 179.08 0.05 12.9
5.0 0.775 0.49 -138.64 0.09 11.6
5.8 0.899 0.51 -108.56 0.13 10.8
6.0 0.930 0.52 -101.13 0.14 10.6
0.1 1.00 -16.12 22.99 27.23 169.9 0.009 80.2 0.58 -11.8 33.9
0.5 0.88 -71.50 18.31 25.25 134.0 0.037 53.6 0.47 -50.9 27.0
0.9 0.77 -109.23 13.52 22.62 110.7 0.05 40.2 0.35 -77.5 24.3
1.0 0.75 -117.04 12.59 22.00 106.1 0.052 37.3 0.33 -83.3 23.8
1.5 0.69 -146.73 9.21 19.28 87.9 0.06 29.0 0.25 -106.3 21.8
1.9 0.67 -164.32 7.50 17.50 76.3 0.065 25.0 0.21 -122.4 20.6
2.0 0.67 -168.10 7.16 17.10 73.7 0.066 24.1 0.20 -126.2 20.3
2.5 0.66 174.78 5.83 15.31 61.6 0.073 20.2 0.17 -144.2 19.1
3.0 0.66 160.26 4.91 13.81 50.6 0.078 16.4 0.16 -161.5 18.0
4.0 0.67 135.52 3.71 11.38 30.1 0.091 9.3 0.15 165.0 16.1
5.0 0.69 114.29 2.96 9.43 10.9 0.103 0.6 0.17 136.7 13.2
6.0 0.72 95.32 2.44 7.75 -7.4 0.116 -8.9 0.21 113.4 11.6
7.0 0.75 78.30 2.05 6.23 -25.2 0.127 -19.5 0.26 94.1 10.4
8.0 0.78 62.75 1.74 4.82 -42.2 0.137 -30.0 0.32 77.6 9.5
9.0 0.82 48.10 1.48 3.43 -58.7 0.144 -41.3 0.38 62.4 8.9
10.0 0.85 33.92 1.27 2.08 -74.9 0.148 -52.9 0.45 48.2 8.6
11.0 0.88 20.72 1.09 0.77 -90.5 0.151 -64.4 0.51 35.1 8.6
12.0 0.90 8.48 0.95 -0.46 -105.3 0.152 -75.7 0.57 22.9 8.0
13.0 0.91 -3.35 0.84 -1.55 -119.8 0.153 -87.1 0.62 11.9 7.4
14.0 0.92 -14.29 0.74 -2.58 -133.5 0.153 -97.7 0.66 1.4 6.9
15.0 0.94 -22.84 0.64 -3.85 -144.6 0.148 -106.4 0.70 -7.5 6.4
16.0 0.95 -30.29 0.55 -5.26 -154.6 0.138 -114.2 0.75 -15.6 6.0
17.0 0.95 -38.87 0.48 -6.36 -165.6 0.133 -122.5 0.78 -24.3 5.6
18.0 0.95 -48.16 0.43 -7.26 -177.3 0.131 -131.4 0.79 -33.1 5.2
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle) Rn/50
Ga
Associated
Gain (dB)
Notes:
F Min.: Minimum Noise Figure
GOpt: Optimum Source Reection Coefcient
Rn: Equivalent noise resistance
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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Typical S-parameters, VDS=4V and IDS=30 mA (Fig. 3)
Freq.
(GHz)
S11 S21 S12 S22
MSG/MAG
(dB)Mag. Ang. Mag.
Mag
(dB) Ang. Mag. Ang. Mag. Ang.
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
-15
-10
-5
0
5
10
15
20
25
30
35
40
0 5 10 15 20
Frequency (GHz)
MSG/MAG and S21 (dB)
MSG/MAG
S21(dB)
Typical Noise Parameters, VDS=4V and IDS=30 mA (Fig. 3)
0.5 0.070 0.37 25.83 0.06 27.6
0.7 0.099 0.37 35.87 0.05 25.4
0.9 0.129 0.38 45.79 0.05 23.6
1.0 0.143 0.38 50.71 0.05 22.8
1.9 0.276 0.41 93.56 0.03 17.8
2.0 0.291 0.41 98.16 0.03 17.5
2.4 0.349 0.42 116.28 0.03 16.1
3.0 0.438 0.43 142.54 0.04 14.6
3.9 0.570 0.46 179.85 0.05 13.0
5.0 0.732 0.48 -137.93 0.09 11.7
5.8 0.850 0.50 -109.57 0.13 10.8
6.0 0.879 0.50 -102.79 0.15 10.5
0.1 1.00 -15.90 23.03 27.25 169.8 0.01 82.5 0.60 -12.0 33.8
0.5 0.88 -70.97 18.35 25.27 134.2 0.036 56.5 0.48 -49.1 27.1
0.9 0.77 -108.70 13.57 22.65 110.9 0.05 40.3 0.36 -74.0 24.4
1.0 0.75 -116.55 12.65 22.04 106.3 0.051 37.7 0.34 -79.4 23.9
1.5 0.69 -146.18 9.26 19.33 88.0 0.059 29.3 0.25 -100.9 21.9
1.9 0.67 -163.86 7.54 17.55 76.4 0.064 25.0 0.21 -115.8 20.7
2.0 0.67 -167.69 7.20 17.15 73.8 0.065 24.0 0.20 -119.3 20.4
2.5 0.66 175.19 5.87 15.37 61.7 0.071 20.5 0.17 -136.4 19.2
3.0 0.65 160.62 4.94 13.87 50.7 0.077 17.0 0.15 -153.2 18.1
4.0 0.66 135.88 3.73 11.44 30.2 0.089 9.6 0.14 172.5 16.2
5.0 0.68 114.61 2.99 9.50 11.0 0.101 1.2 0.15 142.0 13.3
6.0 0.71 95.65 2.46 7.83 -7.4 0.114 -8.1 0.19 117.1 11.7
7.0 0.75 78.58 2.07 6.33 -25.2 0.126 -18.3 0.24 97.0 10.5
8.0 0.78 63.09 1.76 4.92 -42.3 0.135 -28.8 0.30 80.0 9.7
9.0 0.82 48.41 1.50 3.54 -58.9 0.143 -40.2 0.36 64.5 9.1
10.0 0.85 34.23 1.29 2.20 -75.3 0.148 -51.7 0.44 50.0 9.0
11.0 0.88 20.98 1.11 0.88 -90.9 0.15 -63.2 0.50 36.7 8.7
12.0 0.90 8.74 0.96 -0.34 -105.9 0.152 -74.7 0.56 24.5 8.0
13.0 0.91 -3.13 0.85 -1.45 -120.5 0.154 -86.0 0.61 13.3 7.4
14.0 0.93 -14.07 0.75 -2.49 -134.3 0.154 -96.9 0.65 2.7 6.9
15.0 0.94 -22.62 0.65 -3.79 -145.6 0.148 -105.4 0.70 -6.4 6.4
16.0 0.95 -30.07 0.55 -5.21 -155.7 0.139 -113.4 0.74 -14.6 6.0
17.0 0.95 -38.63 0.48 -6.34 -166.7 0.133 -121.7 0.78 -23.4 5.6
18.0 0.95 -47.84 0.43 -7.26 -178.4 0.131 -131.1 0.79 -32.3 5.2
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle) Rn/50
Ga
Associated
Gain (dB)
Notes:
F Min.: Minimum Noise Figure
GOpt: Optimum Source Reection Coefcient
Rn: Equivalent noise resistance
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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Product Marking
58
ESD Rating
Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999
MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D
Visual
Inspection Electrical Test SAM Analysis
Reow 3 cycles,
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection Electrical Test SAM Analysis
Start
MSL Test Flow Chart
Additional Detailed Technical Information
Additional information is available on our web site www.minicircuits.com. To access this information
enter the model number on our web site home page.
Performance data, graphs, s-parameter data set (.zip le)
Case Style: MMM1362
Plastic molded SOT-343 (SC-70) style package, lead nish: matte tin
Suggested Layout for PCB Design: PL-300
Tape & Reel: F90
Standard quantities availabe on reel:
7” reels with 20, 50, 100, 200, 500, 1K, 2K, or 3K devices.
Characterization Test Board: TB-471+
Environmental Ratings: ENV08T2
E-PHEMT SAV-581+
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 35166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 11 of 11
Recommended Application Circuit
VDS, V (nom) 3 4
IDS, mA
(nom)
30mA 30mA
R1 4320Ω4320Ω
R2 4320Ω4320Ω
R3 3570Ω1210Ω
R4 68.1Ω33.2Ω
Q1 MMBT3906* MMBT3906*
Q2 MMBT3906* MMBT3906*
C1 0.01µF 0.01µF
C2 0.01µF 0.01µF
L1** 840nH 840nH
L2** 840nH 840nH
R1
Q1
Q2
R4
R2
GATE
DRAIN
C1 C2
INPUT
MATCHING
CIRCUIT
(MUST PASS DC)
OUTPUT
MATCHING
CIRCUIT
(MUST PASS DC)
R3
Vcc (+5V DC)
RF-IN RF-OUT
DC BIAS CIRCUIT
DUT
L1 L2
SOURCE
RF CIRCUIT
* Fairchild Semiconductor™ part number
** Piconics™ part number CC45T47K240G5
Optimized Amplier Circuits
For band specic, drop-in modules, and as an alternative to designing circuits,
please refer to Mini-Circuits TAMP and RAMP series models which are based
upon SAV/TAV E-PHEMT’s and include all DC blocking, bias, matching and sta-
bilization circuitry, without need for any external components.