BCV28, BCV48 PNP Silicon Darlington Transistors * For general AF applications 1 2 * High collector current 3 2 * High current gain * Complementary types: BCV29, BCV49 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV28 30 BCV48 60 Collector-base voltage Unit VCBO BCV28 40 BCV48 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1 W 150 C mA TS 130 C Junction temperature Tj Storage temperature Tstg 1 -65 ... 150 2011-10-05 BCV28, BCV48 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 20 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCV28 30 - - IC = 10 mA, IB = 0 , BCV48 60 - - IC = 100 A, IE = 0 , BCV28 40 - - IC = 100 A, IE = 0 , BCV48 80 - - 10 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 30 V, IE = 0 , BCV28 - - 0.1 VCB = 60 V, IE = 0 , BCV48 - - 0.1 VCB = 30 V, IE = 0 , TA 150 C, BCV28 - - 10 VCB = 60 V, IE = 0 , TA 150 C, BCV48 - - 10 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 10 A, VCE = 1 V, BCV28 4000 - - IC = 10 A, VCE = 1 V, BCV48 2000 - - IC = 10 mA, VCE = 5 V, BCV28 10000 - - IC = 10 mA, VCE = 5 V, BCV48 4000 - - IC = 100 mA, VCE = 5 V, BCV28 20000 - - IC = 100 mA, VCE = 5 V, BCV48 10000 - - IC = 0.5 A, VCE = 5 V, BCV28 4000 - - IC = 0.5 A, VCE = 5 V, BCV48 2000 - - VCEsat - - 1 VBEsat - - 1.5 Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA 2 2011-10-05 BCV28, BCV48 1Pulse test: t < 300s; D < 2% Electrical Characteristics at T A = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz Ccb - 4.5 - pF AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 3 2011-10-05 BCV28, BCV48 DC current gain hFE = (IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 1000 BCV 28/48 EHP00316 10 3 5 C 125 C 10 5 BCV 28/48 EHP00313 mA 150 C 25 C -50 C 10 2 25 C 5 5 -55 C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 mA 10 10 0 3 0 0.5 1.0 C Collector cutoff current ICBO = (TA) VCB = VCEmax IC = (VBEsat), hFE = 1000 BCV 28/48 EHP00314 C mA 10 4 CBO 150 C 25 C -50 C 10 2 1.5 V CEsat Base-emitter saturation voltage 10 3 V BCV 28/48 EHP00309 nA max 10 3 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V 10 0 3.0 0 50 100 C 150 TA V BEsat 4 2011-10-05 BCV28, BCV48 Transition frequency fT = (IC) VCE = 5 V 10 3 BCV 28/48 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) EHP00312 16 pF MHz CCB(CEB ) fT 12 10 10 2 8 CEB 6 5 4 CCB 2 10 1 10 0 10 1 10 2 mA 0 0 10 3 4 8 12 16 V 22 VCB(VEB C Total power dissipation Ptot = (TS) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 1200 5 BCV 28/48 Ptot max Ptot DC mW D= Ptot tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 800 5 600 10 1 400 EHP00310 5 200 0 0 15 30 45 60 75 90 105 120 C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 Package SOT89 BCV28, BCV48 Package Outline 4.5 0.1 45 B 1.5 0.1 1) 1.6 0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10 MAX. 1 0.2 1 0.15 4 0.25 1 0.1 1) 2.5 0.1 0.25 0.05 3 1.5 0.35 0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 6 1.6 2011-10-05 BCV28, BCV48 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-05