This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching M Di ain sc te on na tin nc ue e/ d 10.80.2 * High forward current transfer ratio hFE * High-speed switching * Allowing automatic insertion with radial taping 0.850.1 1.00.1 0.8 C 0.8 C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Emitter-base voltage (Collector open) VEBO -7 V Collector current IC -8 A Peak collector current ICP -12 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 0.70.1 0.70.1 1.150.2 1.150.2 0.40.1 0.50.1 0.8 C 1 2 2.50.2 3 2.050.2 Absolute Maximum Ratings Ta = 25C 16.01.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 2.50.1 0.650.1 90 4.50.2 3.80.2 7.50.2 2.50.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Internal Connection C B E Symbol Collector-emitter voltage (Base open) VCEO IC = -30 mA, IB = 0 ICBO VCB = -50 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = -7 V, IC = 0 hFE1 * VCE = -3 V, IC = -4 A 1 000 500 on tin Collector-base cutoff current (Emitter open) Conditions ue Parameter Di sc Electrical Characteristics Ta = 25C 3C VCE = -3 V, IC = -8 A VCE(sat) IC = -4 A, IB = -8 mA VBE(sat) IC = -4 A, IB = -8 mA nc e/ hFE2 Collector-emitter saturation voltage te na Forward current transfer ratio Base-emitter saturation voltage Min Typ Max Unit -100 A -50 V -2 mA 10 000 -1.5 V -2.0 V fT VCB = -10 V, IE = 0.5 A, f = 200 MHz Turn-on time ton IC = -4 A, IB1 = -8 mA, IB2 = 8 mA 0.5 s Storage time tstg VCC = -50 V 2.0 s Fall time tf 1.0 s Pl M ain Transition frequency 20 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P hFE1 1 000 to 2 500 Publication date: April 2003 Q R 2 000 to 5 000 4 000 to 10 000 SJD00080BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1504 PC Ta IC VCE VCE(sat) IC -8 -100 TC=25C Collector current IC (A) 1.6 1.2 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -6 IC/IB=500 -10 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) Without heat sink Collector-emitter saturation voltage VCE(sat) (V) 2.0 0.4 -0.6mA -0.4mA -2 -0.2mA 0 40 80 120 0 160 Ambient temperature Ta (C) Forward current transfer ratio hFE TC=-25C 25C 100C -1 -1 -3 -4 TC=100C 25C -25C 103 -10 104 IE=0 f=1MHz TC=25C 103 102 10 1 - 0.1 Collector current IC (A) -1 -10 -100 Collector-base voltage VCB (V) Di sc Safe operation area on tin ue Collector current IC (A) -10 Cob VCB 104 -1 -1 Collector current IC (A) VCE=-3V 102 - 0.1 -10 -25C - 0.1 - 0.1 -5 hFE IC -10 - 0.1 - 0.1 -2 105 IC/IB=500 25C TC=100C -1 Collector-emitter voltage VCE (V) VBE(sat) IC -100 -1 0 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Base-emitter saturation voltage VBE(sat) (V) -0.8mA d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0.8 -4 -100 nc -1 t=1ms t=10ms - 0.1 -10 -100 103 102 10 -1 000 1 10-1 10-4 10-3 10-2 10-1 1 Time t (s) Collector-emitter voltage VCE (V) 2 Without heat sink Pl t=300ms - 0.01 -1 Rth t 104 Thermal resistance Rth (C/W) IC te na ICP -10 M ain Collector current IC (A) e/ Non repetitive pulse TC=25C SJD00080BED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.