2SC1740STP/S - ROHM Co., Ltd.

2SC2412K / 2SC4081 / 2SC4617 /

Transistors 2SC5658 / 2SC1740S

Rev.A 1/3

General purpose transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /

2SC1740S

zFeatures

1) Low Cob.

Cob=2.0pF (T yp.)

2) Complements the 2SA1037AK /

2SA1576A / 2 SA1774H /

2SA2029 / 2SA933AS.

zStructure

Epitaxial planar type

NPN silicon transistor

zDimensions (Unit : mm)

ROHM : VMT3

2SC5658

ROHM : SPT

EIAJ : SC-72

2SC1740S

(1) Emitter

(2) Collector

(3) Base

0.2(15Min.)

0.2 2

0.2

0.45

0.5

0.45

(1) (2) (3)

−

0.05

+0.15

−

0.05

2.5+0.4

−

0.1

3Min.

* Denotes h

2SC2412K 2SC4617

ROHM :

EMT3

EIAJ : SC-75A

JEDEC : SOT-416

Abbreviated symbol: B*

ROHM : UMT3

EIAJ : SC-70

JEDEC : SOT-323

2SC4081

Abbreviated symbol: B*

(1) Base

(2) Emitter

(3) Collector

ROHM : SMT3

EIAJ : SC-59

JEDEC : SOT-346

Abbreviated symbol: B*

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

0.8

0.15

0~0.1

0.3Min.

1.1

(2)(1)

2.8

1.6

0.4

(3)

1.9

0.95 0.95

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

1.25

2.1

0.3

0.15

0~0.1

0.1Min.

(3)

0.9

0.7 0.2

0.65

(2)

2.0

1.3

(1)

0.65

(1) Emitter

(2) Base

(3) Collector

0.7

0.15

0.1Min.

0.55

0~0.1

0.2

1.6

1.0

0.3

0.8

(2)

0.50.5

(3)

0.2

(1)

0~0.1

(3)

0.32

0.8

1.2

0.13 0.5

0.22

0.40.4

1.2

0.80.2

0.15Max.

0.2

(2)

(1)

zA bsolute maximum (Ta=25°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Parameter

CBO

CEO

EBO

Tstg

60 V

°C

0.15I

0.2

0.15

0.3

2SC2412K, 2SC4081

2SC1740S

2SC4617, 2SC5658

150

−55 to +150

Symbol Limits Unit

2SC2412K / 2SC4081 / 2SC4617 /

Transistors 2SC5658 / 2SC1740S

Rev.A 2/3

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

Parameter Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

Cob

Min.

−

120

−

180

−

0.1

560

0.4

−

3.5

C=50µA

IC=1mA

IE=50µA

VCB=60V

VEB=7V

VCE=6V, IC=1mA

IC/IB=50mA/5mA

VCE=12V, IE=−2mA, f=100MHz

VCE=12V, IE=0A, f=1MHz

µA

−

MHz

Typ. Max. Unit Conditions

Transition frequency

zPackaging specifications and hFE

Package

Code

Taping

Basic ordering

unit (pieces)

T146 T106

3000 3000

−

QRS

2SC2412K

2SC4081

−−

3000

−

T2L

8000

−

QRS2SC4617

5000

−

−−− −

QRS2SC5658

−

−−−

QRS2SC1740S

Type

hFE values are classified as follows :

Item Q R S

hFE 120 to 270 180 to 390 270 to 560

zElectrical characterristic curves

Fig.1 Grounded emitter propagation

characteristics

0.1

0.2

0.5

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100°C

=6V

COLLECTOR CURRENT : I

C (mA)

BASE TO EMITTER VOLTAGE : V

BE (V)

25°C

−55°C

Fig.2 Grounded emitter output

characteristics ( Ι )

100

0.4 0.8 1.2 1.6 2.00

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

(V)

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25°C

=0A

0.40mA

0.50mA

0.45mA

4 8 12 16

=0A

Ta=25°C

COLLECTOR CURRENT : I

C (mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE (V)

3µA

6µA

9µA

12µA

15µA

18µA

21µA

24µA

27µA

30µA

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

2SC2412K / 2SC4081 / 2SC4617 /

Transistors 2SC5658 / 2SC1740S

Rev.A 3/3

0.2

10 0.5 1 2 5 10 20 50 100 200

100

200

500

=5V

Ta=25°C

Fig.4 DC current gain vs.

collector current ( Ι )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(mA)

0.2 0.5 1 2 5 10 20 50 100 200

100

200

500

25°C

−55°C

Ta=100°CV

Fig.5 DC current gain vs.

collector current ( ΙΙ )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(mA)

Fig. 6 Collector-emitter saturation

voltage vs. collector current

0.2

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(mA)

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

=50

Ta=25°C

Fig.7 Collector-emitter saturation

voltage vs. collector current ( Ι )

0.2

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(mA)

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

=10

Ta=100°C

25°C

−55°C

Fig.8 Collector-emitter saturation

voltage vs. collector current (ΙΙ)

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : IC (mA)

0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100

IC/IB=50

Ta=100°C

25°C

−55°C

Fig.9 Gain bandwidth product vs.

emitter current

−0.5 −1−2−5−10 −20 −50 −100

100

200

500

Ta=25°C

=6V

EMITTER CURRENT : I

(mA)

TRANSITION FREQUENCY : f

(MHz)

Fig.10 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

COLLECTOR TO BASE VOLTAGE : V

CB (V)

EMITTER TO BASE VOLTAGE : V

EB (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

pF)

EMITTER INPUT CAPACITANCE : Cib (

pF)

0.2 0.5 1 2 5 10 20 50

Cob

Ta=25°C

1MHz

=0A

Cib

Fig.11 Base-collector time constant

vs. emitter current

−0.2 −0.5 −1−2−5−10

BASE COLLECTOR TIME CONSTANT : Cc·r

bb' (ps)

EMITTER CURRENT : I

(mA)

100

200 Ta=25°C

f=32MH

=6V

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

Appendix1-Rev2.0

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The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level

of reliability and the malfunction of which would directly endanger human life (such as medical

instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers

and other safety devices), please be sure to consult with our sales representative in advance.

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance

of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow

for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in

order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM

cannot be held responsible for any damages arising from the use of the products under conditions out of the

range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix