FDD5614P Rev C1(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Av alanche Ratings (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy VDD = –30 V, ID = –4.5 A 90 mJ
IAR Maximum Drain-Source Avalanche
Current –4.5 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –49 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C
4
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –4.5 A
VGS = –4.5 V, ID = –3.9 A
VGS = –10 V,ID = –4.5 A,TJ=125°C
76
99
137
100
130
185
mΩ
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –3 A 8 S
Dynamic Characteristics
Ciss Input Capacitance 759 pF
Coss Output Capacitance 90 pF
Crss Reverse Transfer Capacitance
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz 39 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 7 14 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 19 34 ns
tf Turn–Off Fall Time
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
12 22 ns
Qg Total Gate Charge 15 24 nC
Qgs Gate–Source Charge 2.5 nC
Qgd Gate–Drain Charge
VDS = –30V, ID = –4.5 A,
VGS = –10 V
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forwar d Current –3.2 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V
FDD5614P
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