VS-ST280C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 500 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case A-PUK (TO-200AB)) * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * DC motor controls A-PUK (TO-200AB) * Controlled DC power supplies * AC controllers PRIMARY CHARACTERISTICS IT(AV) 500 A VDRM/VRRM 400 V, 600 V VTM 1.36 V IGT 90 mA TJ -40 C to +125 C Package A-PUK (TO-200AB) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 960 A 25 C 7850 60 Hz 8220 50 Hz 308 60 Hz 281 Typical TJ UNITS 500 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 600 V 100 s - 40 to 125 C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST280C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 06 600 700 30 Revision: 27-Sep-17 Document Number: 94400 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave double side(single side) cooled 960 No voltage reapplied 100 % VRRM reapplied 6600 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t C 7850 t = 10 ms I2t A 55 (85) t = 10 ms t = 8.3 ms No voltage reapplied 8220 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 308 281 218 t = 0.1 to 10 ms, no voltage reapplied 3080 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.84 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.50 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.47 Ipk = 1050 A, TJ = 125 C, tp = 10 ms sine pulse 1.36 Maximum holding current IH Maximum (typical) latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 200 VT(TO)1 VTM A 6900 Low level value of threshold voltage Maximum on-state voltage UNITS 500 (185) DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 27-Sep-17 Document Number: 94400 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = 25 C IGT TJ = - 40 C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD W A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C 180 - 90 150 40 - 2.9 - TJ = 25 C 1.8 3.0 TJ = 125 C 1.2 - TJ = TJ maximum UNITS 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied mA V 10 mA 0.30 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TJ - 40 to 125 TStg - 40 to 150 RthJ-hs Maximum thermal resistance, case to heatsink TEST CONDITIONS RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 4900 (500) N (kg) 50 g A-PUK (TO-200AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180 0.016 0.016 0.011 0.011 120 0.019 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94400 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280C Series 130 Vishay Semiconductors ST280C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 Conduction Angle 80 30 70 60 90 60 120 180 50 40 0 50 100 150 200 250 300 350 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 130 120 110 100 90 ST280C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W Conduction Period 80 70 60 50 40 30 20 30 60 90 120 180 DC 0 Average On-state Current (A) 30 60 90 120 20 180 DC 0 100 200 300 400 500 600 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Conduction Period 40 30 Average On-state Current (A) 100 90 Conduction Angle 30 20 60 90 50 40 30 0 120 180 100 200 300 400 500 600 700 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 1000 1000 180 120 90 60 30 900 800 700 RMS Limit 600 500 400 Conduction Angle 300 200 ST280C..C Series T J = 125C 100 0 0 100 200 300 400 500 600 700 Average On-state Current (A) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) ST280C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 80 70 60 800 Fig. 5 - On-State Power Loss Characteristics Fig. 2 - Current Ratings Characteristics 130 120 110 600 Fig. 4 - Current Ratings Characteristics ST280C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 80 70 60 50 400 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 120 110 100 90 200 1300 DC 1200 180 1100 120 1000 90 900 60 800 30 700 600 RMS Limit 500 Conduction Period 400 300 ST280C..C Series 200 T J = 125C 100 0 0 200 400 600 800 1000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94400 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280C Series 7000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 3500 3000 ST280C..C Series 1 10 100 8000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 7500 Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRM Reapplied 7000 6500 6000 5500 5000 4500 4000 ST280C..C Series 3500 3000 0.01 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25C TJ = 125C 1000 ST280C..C Series 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs(K/W) Fig. 9 - On-State Voltage Drop Characteristics 1 Steady State Value 0.1 R thJ-hs = 0.17 K/W (Single Side Cooled) R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 0.001 0.001 ST280C..C Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94400 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280C Series www.vishay.com (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s 10 tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) VGD IGD Tj=-40 C 1 0.1 0.001 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) (2) (3) (4) Device: ST280C..C Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Charactersitics ORDERING INFORMATION TABLE Device code VS- ST 28 0 C 06 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code: code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (TO-200AB) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 27-Sep-17 Document Number: 94400 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors A-PUK (TO-200AB) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. C G 13.7/14.4 (0.54/0.57) A 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. Note: A = Anode C = Cathode G = Gate 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95074 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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