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SMP100LC-xxx
®
January 2002 - Ed: 7C
TELECOM EQUIPMENT PROTECTION: TRISIL™
Bidirectional crowbar protection
Voltage range from 8V to 262V
Low capacitance from 30 pF to 45pF typ @ 50V
Low leakage current : IR=2µA max
Holding current: IH= 150 mA min
Repetitive peak pulse current :
IPP = 100 A (10/1000µs)
FEATURES
The SMP100LC-xxx series is a low
capacitance transient surge arrestor designed
for the protection of high debit rate
communicationequipment.Itslowcapacitance
avoids any distortion of the signal and is
compatible with digital line cards (xDSL,
T1/E1, ISDN...).
DESCRIPTION
SCHEMATIC DIAGRAM
Any sensitive equipment requiring protection
against lightning strikes and power crossing:
Analog and digital line cards
(xDSL, T1/ E1, ISDN...)
Terminals (phone, fax, modem...) and central of-
fice equipment
MAIN APPLICATIONS
Trisilsare not subjectto ageing andprovide a failsafe mode inshort circuit fora better protection.They are
used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They
have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils are UL497B
approved (file: E136224) and comply with the following standards GR-1089 Core, ITU-T-K20/K21,
VDE0433, VDE0878, IEC61000-4-5 and FCC part 68.
BENEFITS
SMB
(JEDEC DO-214AA)
SMP100LC-xxx
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Symbol Parameter Value Unit
Rth(j-a) Junction to ambient with recommended footprint 100 °C/W
Rth(j-l) Junction to leads 20 °C/W
THERMAL RESISTANCES
STANDARD Peak Surge
Voltage
(V)
Voltage
Waveform
Required
peak current
(A)
Current
waveform
Minimum serial
resistor to meet
standard ( )
GR-1089 Core
First level 2500
1000 2/10 µs
10/1000 µs 500
100 2/10 µs
10/1000 µs 0
0
GR-1089 Core
Second level 5000 2/10 µs 500 2/10 µs 0
GR-1089 Core
Intra-building 1500 2/10 µs 100 2/10 µs 0
ITU-T-K20/K21 6000
1500 10/700 µs 150
37.5 5/310 µs 0
0
ITU-T-K20
(IEC61000-4-2) 8000
15000 1/60 ns ESD contact discharge
ESD air discharge 0
0
VDE0433 4000
2000 10/700 µs 100
50 5/310 µs 0
0
VDE0878 4000
2000 1.2/50 µs 100
50 1/20 µs 0
0
IEC61000-4-5 4000
4000 10/700 µs
1.2/50 µs 100
100 5/310 µs
8/20 µs 0
0
FCC Part 68, lightning
surge type A 1500
800 10/160 µs
10/560 µs 200
100 10/160 µs
10/560 µs 0
0
FCC Part 68, lightning
surge type B 1000 9/720 µs 25 5/320 µs 0
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
Symbol Parameter
VRM Stand-off voltage
IRM Leakage current at VRM
VRContinuous reverse voltage
IRLeakage current at VR
VBR Breakdown voltage
VBO Breakover voltage
IHHolding current
IBO Breakover current
IPP Peak pulse current
CCapacitance
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
SMP100LC-xxx
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100
50
%I
PP
tt
rp
0t
Symbol Parameter Value Unit
Ipp Repetitive peak pulse current: 10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
100
250
120
150
200
250
500
A
IFS Fail-safe mode : maximum current (note 1) 8/20 µs5kA
I
TSM Non repetitive surge peak on-state current
(Sinusoidal) t = 20ms
t = 16.6ms
t = 0.2s
t=2s
55
60
25
12
A
TLMaximum lead temperature for soldering during 10s 260 °C
Tstg
Tj Storage temperature range
Maximum junction temperature -55to+150
150 °C
°C
Note 1: in fail safe mode, the device acts as a short circuit.
ABSOLUTE RATINGS (Tamb =25°C)
Type IRM @V
RM
max.
IR@V
R
max.
Note 1
Dynamic
VBO @I
BO
max. max
Note 2
Static
VBO @I
BO
max. max
Note 3
IH
min.
Note 4
C
typ.
Note 5
C
typ.
Note 6
µAVµAV VmAVmAmA pF pF
SMP100LC-8
2
6
50
825
800
15
800
50 (typ) NA 75
SMP100LC-25 22 25 40 35 150 NA 65
SMP100LC-35 32 35 55 55 150 NA 55
SMP100LC-65 55 65 85 85 150 45 90
SMP100LC-90 81 90 120 125 150 40 80
SMP100LC-120 108 120 155 160 150 35 75
SMP100LC-140 120 140 185 190 150 30 65
SMP100LC-160 144 160 210 220 150 30 65
SMP100LC-200 170 200 265 275 150 30 60
SMP100LC-230 200 230 300 320 150 30 60
SMP100LC-270 230 262 350 370 150 30 60
Note 1: IRmeasured at VRguarantee VBR min VRNote 4: See funtional holding current test circuit 3
Note 2: See functional test circuit 1 Note 5: VR= 50V bias, VRMS=1V, F=1MHz
Note 3: See test circuit 2 Note 6:V
R
= 2V bias, VRMS=1V, F=1MHz
ELECTRICAL PARAMETERS (Tamb = 25°C)
Repetitive peak pulse current
tr: rise time (µs)
tp: pulse duration time (µs)
ex: Pulse waveform 10/1000µs
tr = 10µs tp = 1000µs
SMP100LC-xxx
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1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
0
10
20
30
40
50
60
70
t(s)
ITSM(A)
F=50Hz
Fig. 1: Non repetitive surge peak on-state current
versus overload duration (Tjinitial = 25 °C).
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj(°C)
IH[Tj] / IH[Tj=25°C]
Fig. 3: Relative variation of holding current versus
junction temperature .
-25 0 25 50 75 100 125
0.96
0.98
1.00
1.02
1.04
1.06
1.08
Tj(°C)
VBO[Tj] / VBO[Tj=25°C]
Fig. 4: Relative variation of breakover voltage versus
junction temperature.
25 50 75 100 125
1
10
100
1000
2000
Tj(°C)
IRM[Tj] / IRM[Tj=25°C]
VRM > 50V
VRM < 50V
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1
10
100
tp(s)
Zth(j-a)(°CW)
Fig. 6: Variation of thermal impedance junction to
ambient versus pulse duration (Printed circuit board
FR4, SCu=35µm, recommended pad layout).
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1
10
50
VT(V)
IT(A)
Tj=25°C
Fig. 2: On-state voltage versus on-state current
(typical values)
SMP100LC-xxx
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1 2 5 10 20 50 100 300
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR(V)
C [VR] / C [VR=2V]
Tj=25°C
F=1MHz
VRMS=1V
Fig. 7: Relative variation of junction capacitance
versus reverse voltage applied (typical values).
100 V / µs, di/dt < 10 A / µs, Ipp = 100 A
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A
U
U
10 µF
245
66 470
83
0.36 nF
46 µH
60 µF
26 µH
12
250 46 µH
47
KeyTek 'System 2' generator with PN246I module
KeyTek 'System 2' generator with PN246I module
TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS
SMP100LC-xxx
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TEST PROCEDURE :
Pulse test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO <200 Volt
-V
OUT = 250 VRMS,R
1= 140 .
- Device with VBO 200 Volt
-V
OUT = 480 VRMS,R
2= 240 .
TEST CIRCUIT 2 FOR IBO and VBO parameters :
220V 50Hz
1/4
R1 = 140
R2 = 240
K
ton = 20ms
IBO
measurement
VBO
measurement
Vout DUT
TEST CIRCUIT 3 FOR IHPARAMETER
R
VBAT = - 48 V
Surge generator
D.U.T
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the IHvalue by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.
- The D.U.T. will come back to the off-state within 50 ms max.
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SMP100LC-xxx
PACKAGE MECHANICAL DATA
SMB (Plastic)
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
E
C
L
E1
D
A1
A2
b
1.52 2.75
2.3
1.52
(0.09)
(0.059)(0.108)(0.059)
FOOT PRINT in millimeters (inches)
SMP100LC-xxx
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Ordering type Marking Package Weight Base qty Delivery mode
SMP100LC-8 PL8
SMB 0.11g 2500 Tape & Reel
SMP100LC-25 L25
SMP100LC-35 L35
SMP100LC-65 L06
SMP100LC-90 L09
SMP100LC-120 L12
SMP100LC-140 L14
SMP100LC-160 L16
SMP100LC-200 L20
SMP100LC-230 L23
SMP100LC-270 L27
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ofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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SMP 100 LC - xxx
Trisil Surface Mount
Low C apacitance
Voltage
I = 100 A
PP
ORDER CODE