SMP100LC-xxx
3/8
100
50
%I
PP
tt
rp
0t
Symbol Parameter Value Unit
Ipp Repetitive peak pulse current: 10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
100
250
120
150
200
250
500
A
IFS Fail-safe mode : maximum current (note 1) 8/20 µs5kA
I
TSM Non repetitive surge peak on-state current
(Sinusoidal) t = 20ms
t = 16.6ms
t = 0.2s
t=2s
55
60
25
12
A
TLMaximum lead temperature for soldering during 10s 260 °C
Tstg
Tj Storage temperature range
Maximum junction temperature -55to+150
150 °C
°C
Note 1: in fail safe mode, the device acts as a short circuit.
ABSOLUTE RATINGS (Tamb =25°C)
Type IRM @V
RM
max.
IR@V
R
max.
Note 1
Dynamic
VBO @I
BO
max. max
Note 2
Static
VBO @I
BO
max. max
Note 3
IH
min.
Note 4
C
typ.
Note 5
C
typ.
Note 6
µAVµAV VmAVmAmA pF pF
SMP100LC-8
2
6
50
825
800
15
800
50 (typ) NA 75
SMP100LC-25 22 25 40 35 150 NA 65
SMP100LC-35 32 35 55 55 150 NA 55
SMP100LC-65 55 65 85 85 150 45 90
SMP100LC-90 81 90 120 125 150 40 80
SMP100LC-120 108 120 155 160 150 35 75
SMP100LC-140 120 140 185 190 150 30 65
SMP100LC-160 144 160 210 220 150 30 65
SMP100LC-200 170 200 265 275 150 30 60
SMP100LC-230 200 230 300 320 150 30 60
SMP100LC-270 230 262 350 370 150 30 60
Note 1: IRmeasured at VRguarantee VBR min ≥VRNote 4: See funtional holding current test circuit 3
Note 2: See functional test circuit 1 Note 5: VR= 50V bias, VRMS=1V, F=1MHz
Note 3: See test circuit 2 Note 6:V
R
= 2V bias, VRMS=1V, F=1MHz
ELECTRICAL PARAMETERS (Tamb = 25°C)
Repetitive peak pulse current
tr: rise time (µs)
tp: pulse duration time (µs)
ex: Pulse waveform 10/1000µs
tr = 10µs tp = 1000µs