VS-VSK.430..PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 430 A FEATURES * High current capability * High surge capability * High voltage ratings up to 2000 V * 3000 VRMS isolating voltage with non-toxic substrate * Industrial standard package * UL approved file E78996 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS SUPER MAGN-A-PAK * Motor starters * DC motor controls - AC motor controls PRODUCT SUMMARY * Uninterruptible power supplies IT(AV) 430 A Type Modules - Thyristor, Standard Package SUPER MAGN-A-PAK Circuit Two SCRs doubler circuit * Wind mill MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) TC = 82 C 430 IT(RMS) TC = 82 C 675 50 Hz 15.7 60 Hz 16.4 50 Hz 1232 60 Hz 1125 ITSM I2t I2t UNITS A kA kA2s 12 320 kA2s V VRRM Range 1600 to 2000 TJ Range -40 to +150 TStg Range -40 to +130 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSK.430.. VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 18 1800 1900 IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 Revision: 17-Jun-14 Document Number: 93748 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.430..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 430 A 82 C A Maximum average on-state current at case temperature IT(AV), IF(AV) 180 conduction, half sine wave Maximum RMS on-state current IT(RMS) 180 conduction, half sine wave at TC = 82 C 675 t = 10 ms 15.7 Maximum peak, one-cycle, non-repetitive surge current ITSM, IFSM t = 8.3 ms t = 8.3 ms I2t t = 8.3 ms Maximum for fusing No voltage reapplied 13.2 Sinusoidal half wave, initial TJ = TJ maximum 13.8 1232 1125 871 t = 0.1 ms to 10 ms, no voltage reapplied 12 320 t = 8.3 ms I2t 100 % VRRM reapplied 100 % VRRM reapplied t = 10 ms I2t 16.4 kA t = 10 ms t = 10 ms Maximum I2t for fusing No voltage reapplied kA2s 795 Low level value of threshold voltage VF(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.96 High level value of threshold voltage VF(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.06 kA2s V Low level value of on-state slope resistance rf1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.51 High level value of on-state slope resistance rf2 (I > x IT(AV)), TJ = TJ maximum 0.45 Maximum on-state voltage drop VTM Ipk = 1500 A, TJ = 25 C, tp = 10 ms sine pulse 1.65 V Maximum forward voltage drop VFM Ipk = 1500 A, TJ = 25 C, tp = 10 ms sine pulse 1.65 V Maximum holding current Typical latching current IH IL m 500 TJ = 25 C, anode supply 12 V resistive load mA 1000 SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/s VR = 50, dV/dt = 20 V/s, Gate 0 V 100 VALUES UNITS 1000 A/s 2.0 200 s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES UNITS TJ = 130 C, linear to VD = 80 % VDRM 1000 V/s RMS insulation voltage VINS t=1s 3000 V Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 17-Jun-14 Document Number: 93748 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.430..PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES TJ -40 to 130 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case per junction RthJC Maximum thermal resistance, case to heatsink RthC-hs C 0.065 K/W 0.02 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. SMAP to heatsink Mounting torque 10 % DC operation UNITS busbar to SMAP 6 to 8 Nm 12 to 15 Approximate weight 1500 Case style See dimensions - link at the end of datasheet g SUPER MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.009 0.006 120 0.011 0.011 90 0.014 0.015 60 0.021 0.022 30 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Maximum Allowable Case Temperature (C) 130 VSK.430..PbF Series R thJC (DC) = 0.065 K/W 120 110 Conduction Angle 100 90 30 60 90 80 120 180 70 0 100 200 300 400 50 Maximum Allowable Case Temperature (C) Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 VSK.430..PbF Series R thJC (DC) = 0.065 K/W 120 110 Conduction Period 100 90 30 80 60 90 120 180 DC 70 0 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Revision: 17-Jun-14 Document Number: 93748 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.430..PbF Series Vishay Semiconductors 700 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) www.vishay.com 180 120 90 60 30 600 500 400 RMS Limit 300 Conduction Angle 200 VSK.430..PbF Series Per Junction TJ = 130C 100 0 0 100 200 300 400 15000 12000 11000 10000 9000 8000 6000 500 1 Peak Half Sine Wave On-state Current (A) RMS Limit 400 Conduction Period VSK.430..PbF Series Per Junction TJ = 130C 200 100 0 0 100 200 300 400 500 600 16000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130C No Voltage Reapplied Rated VRRM Reapplied 15000 14000 13000 12000 11000 10000 9000 8000 7000 VSK.430..PbF Series Per Junction 6000 0.01 700 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current 800 5K 0 .0 K/ W = K/ W A K/ W /W 0. 2 500 R th S Conduction Angle 0. 16 W K/ 600 09 0. 12 180 120 90 60 30 700 0. -D 300 /W K/ W 0.6 K / 200 R 0.3 K 0.4 a 400 e lt Maximum Total On-state Power Loss (W) Maximum Average On-state Power Loss (W) 500 300 100 Fig. 5 - Maximum Non-Repetitive Surge Current DC 180 120 90 60 30 600 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1000 700 VSK.430..PbF Series Per Junction 7000 Fig. 3 - On-State Power Loss Characteristics 800 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 13000 Average On-state Current (A) 900 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 130C 14000 W VSK.430..PbF Series Per Module TJ = 130C 100 0 0 100 200 300 400 500 600 Total RMS Output Current (A) 700 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Fig. 7 - On-State Power Loss Characteristics Revision: 17-Jun-14 Document Number: 93748 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.430..PbF Series www.vishay.com Vishay Semiconductors 1. 5 1 W K/ K/ W - 2000 K/ W = 2 SA 180 (Sine) 180 (Rect) 2500 R th D e 3K /W lt a R Maximum Total Power Loss (W) 3000 1500 5K 1000 /W 10 K /W 2 x VSK.430..PbF Series 15 K/ W Single Phase Bridge Connected T J = 130 C 500 0 0 100 200 300 400 500 600 700 800 900 0 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C ) Fig. 8 - On-State Power Loss Characteristics R 4500 0. 4000 120 (Rect) 3500 3000 2500 2000 0.0 3 x VSK.430..PbF Series Three Phase Bridge Connected TJ = 130C 500 0 0 200 400 600 K/ W = 0. 0 05 K/ W -D el ta R 5K /W 0.1 K/ W 0.2 K/ W 800 1000 1200 1400 0 Total Output Current (A) 01 0. 02 K/ W 0.0 3K /W 1500 1000 SA th Maximum Total Power Loss (W) 5000 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (C) Instantaneous On-state Current (A) 10000 TJ = 25 C TJ = 130C 1000 VSK.430..PbF Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) Fig. 9 - On-State Power Loss Characteristics 0.1 VSK.430..PbF Series Per Junction 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics Revision: 17-Jun-14 Document Number: 93748 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.430..PbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (a) (b) Tj=-40 C 1 Tj=25 C Tj=130C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 VSK.430..PbF Series 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- VSK 2 1 T 430 3 4 18 PbF 5 6 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (see end of datasheet) 4 - Current rating 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 Revision: 17-Jun-14 Document Number: 93748 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.430..PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKT... 1 ~ Two SCRs doubler circuit + T 2 - 3 4 (K1) 7 (K2) 5 (G1) 6 (G2) VSKH... 1 ~ SCR/diode doubler circuit, positive control + H 2 - 3 4 (K1) 5 (G1) VSKL... 1 ~ SCR/diode doubler circuit, negative control + L 2 3 - 7 (K2) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95283 Revision: 17-Jun-14 Document Number: 93748 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Thyristor/Diode 52 (2.05) DIMENSIONS in millimeters (inches) O 6.5 mm 0.3 mm x 4 Holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 3 2 26.0 (0.98) 26.0 (0.98) 4 6 7 20.1 (0.78) 1 5 28.0 (1.10) 48.0 (1.89) 60.0 (2.36) M10 36.4 (1.14) 4.5 (0.20) 112.0 (4.41) 124.0 (4.88) 5, 6 = Gate 4, 7 = Cathode 1.0 (0.039) 149.0 (5.67) Revision: 20-Aug-13 Document Number: 95283 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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