VS-VSK.430..PbF Series
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Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 VRMS isolating voltage with non-toxic
substrate
• Industrial standard package
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptible power supplies
• Wind mill
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 430 A
Type Modules - Thyristor, Standard
Package SUPER MAGN-A-PAK
Circuit Two SCRs doubler circuit
SUPER MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) TC = 82 °C 430 A
IT(RMS) TC = 82 °C 675
ITSM
50 Hz 15.7 kA
60 Hz 16.4
I2t50 Hz 1232 kA2s
60 Hz 1125
I2t12 320 kA2s
VRRM Range 1600 to 2000 V
TJRange -40 to +150 °C
TStg Range -40 to +130
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-VSK.430.. 16 1600 1700 100
18 1800 1900
VS-VSK.430..PbF Series
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
IT(AV),
IF(AV)
180° conduction, half sine wave
430 A
82 °C
Maximum RMS on-state current IT(RMS) 180° conduction, half sine wave at TC = 82 °C 675 A
Maximum peak, one-cycle,
non-repetitive surge current
ITSM,
IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
15.7
kA
t = 8.3 ms 16.4
t = 10 ms 100 % VRRM
reapplied
13.2
t = 8.3 ms 13.8
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1232
kA2s
t = 8.3 ms 1125
t = 10 ms 100 % VRRM
reapplied
871
t = 8.3 ms 795
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 12 320 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.96
V
High level value of threshold voltage VF(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.06
Low level value of on-state slope resistance rf1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.51
m
High level value of on-state slope
resistance rf2 (I > x IT(AV)), TJ = TJ maximum 0.45
Maximum on-state voltage drop VTM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V
Maximum forward voltage drop VFM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load
500
mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, VDRM applied 1000 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 2.0
μs
Typical turn-off time tq
ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/μs
VR = 50, dV/dt = 20 V/μs, Gate 0 V 100 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = 130 °C, linear to VD = 80 % VDRM 1000 V/μs
RMS insulation voltage VINS t = 1 s 3000 V
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
VS-VSK.430..PbF Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ-40 to 130 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.065
K/W
Maximum thermal resistance,
case to heatsink RthC-hs 0.02
Mounting torque ± 10 %
SMAP to heatsink A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
6 to 8
Nm
busbar to SMAP 12 to 15
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.009 0.006
TJ = TJ maximum K/W
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
70
80
90
100
110
120
130
010020030040050
30° 60° 90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Angle
VSK.430..PbF Series
R (DC) = 0.065 K/W
th JC
70
80
90
100
110
120
130
010020030040050060070
0
DC
30° 60° 90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.430..PbF Series
R (DC) = 0.065 K/W
thJC
VS-VSK.430..PbF Series
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Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Power Loss Characteristics
0
100
200
300
400
500
600
700
01002003004005
00
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.430..PbF Series
Per Junction
T = 130°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.430..PbF Series
Per Junction
T = 130°C
J
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 130 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rat ed V App lied Following S ur ge .
RRM
VSK.430..PbF Series
Per Junction
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial T = 130°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
VSK.430..PbF Series
Per Junction
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.05K/W-DeltaR
thS
A
0.09K/W
0.12K/W
0.16K/W
0.2K/W
0.3K/W
0.4K/W
0.6K/ W
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500 600 700
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
VSK.430..PbF Series
Per M odule
T = 130°C
J
VS-VSK.430..PbF Series
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Revision: 17-Jun-14 5Document Number: 93748
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Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics
020406080100120
Maximum Allowable Ambient Temperature (°C )
R=1K/W-DeltaR
thS
A
1.5K/W
2K/W
3K/W
5K/W
10 K/ W
15K/W
0
500
1000
1500
2000
2500
3000
0 100 200 300 400 500 600 700 800 900
Total Out put Curren t (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSK.430..PbF Series
Single Phase Bridge
Connected
T = 130 °C
J
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.005K/W-DeltaR
thS
A
0.01K/W
0.02K/W
0.03K/W
0.05K/W
0.1K/W
0.2K/W
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 200 400 600 800 1000 1200 1400
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.430..PbF Series
Three Phase Bridge
Connected
T = 130°C
J
100
1000
10000
0.511.522.533
.5
T = 25 °C
J
Instantaneous On-state Current (A)
Instan taneous On-state Voltage (V)
T = 130°C
J
VSK.430..PbF Series
Per Junction
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
Tr ansient Thermal I mpedance Z (K/W)
VSK.430..PbF Series
Per Junction
Steady Stat e V alue:
R = 0.065 K/W
(DC Operation)
thJC
VS-VSK.430..PbF Series
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Fig. 12 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Device code
- Module type
- Circuit configuration (see end of datasheet)
- Current rating
- Voltage code x 100 = VRRM (see Voltage Ratings table)
- Lead (Pb)-free
VSKVS- T 430 - 18 PbF
2
3
4
5
6
5 6
132 4
- Vishay Semiconductors product
1
VS-VSK.430..PbF Series
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs doubler circuit T
SCR/diode doubler
circuit, positive control H
SCR/diode doubler
circuit, negative control L
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95283
+
7
(K2)
6 (G2)
-
4
(K1)
5 (G1)
~
1
2
3
VSKT...
+
-
4(K1)
5(G1)
~
1
2
3
VSKH...
+
7(K2)
6(G2)
-
~
1
2
3
VSKL...
Outline Dimensions
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Super MAGN-A-PAK Thyristor/Diode
DIMENSIONS in millimeters (inches)
52 (2.05)
60.0 (2.36)
48.0 (1.89)
31.0
(1.22)
50.0
(1.97)
44.0
(1.73)
M10
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
20.1
(0.78)
36.4 (1.14) 4.5 (0.20)
54
6
5, 6 = Gate
4, 7 = Cathode
7
28.0
(1.10)
26.0
(0.98)
26.0
(0.98)
112.0 (4.41)
124.0 (4.88)
149.0 (5.67)
1.0 (0.039)
32
1
Ø 6.5 mm ± 0.3 mm x 4 Holes (Typ.)
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