www.vishay.com Document Number: 90350
2S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A
c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Maximum Power Dissipation TC = 25 °C PD42 W
Peak Diode Recovery dV/dtcdV/dt 5.8 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - - 110
°C/WCase-to-Sink RthCS -1.7-
Maximum Junction-to-Case (Drain) RthJC --3.0
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 50 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 500 nA
Zero Gate Voltage Drain Current IDSS
VDS = max. rating, VGS = 0 V - - 250 µA
V
DS
= 0.8 x max. rating, V
GS
= 0 V, T
J
= 125 °C
- - 1000
Drain-Source On-State Resistance RDS(on) V
GS = - 10 V ID = 5.7 Ab- 0.20 0.28 Ω
Forward Transconductance gfs VDS ≤ - 50 V, IDS = - 5.7 A 2.3 3.5 - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 9
- 490 -
pFOutput Capacitance Coss - 320 -
Reverse Transfer Capacitance Crss -70-
Total Gate Charge Qg
VGS = - 10 V
ID = - 9.7 A, VDS = 0.8 x max.
rating, see fig. 16
(Independent operating
temperature)
-9.414
nC Gate-Source Charge Qgs -4.36.5
Gate-Drain Charge Qgd -4.36.5
Turn-On Delay Time td(on)
VDD = - 25 V, ID = - 9.7 A,
RG = 18 Ω, RD = 2.4 Ω, see fig. 15
(Independent operating temperature)
-8.212
ns
Rise Time tr -5766
Turn-Off Delay Time td(off) -1218
Fall Time tf -2538
Internal Drain Inductance LD
Between lead,
6 mm (0.25") from
package and center of
die contact.
-4.5-
nH
Internal Source Inductance LS-7.5-
D
S
G