IRFU9024 - Vishay [Siliconix]

Document Number: 90350 www.vishay.com

S-Pending-Rev. A, 10-Jun-08 WORK-IN-PROGRESS 1

Power MOSFET

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

FEATURES

• Surface Mountable (Order As IRFR9020/SiHFR9020)

• Straight Lead Option (Order As IRFU9020/SiHFU9020)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance combined

with high transconductance; superior reverse energy and

diode recovery dV/dt.

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of Power

MOSFET’s to high volume applications where PC Board

surface mounting is desirable. The surface mount option

IRFR9020/SiHFR9020 is provided on 16mm tape. The

straight lead option IRFR9020/SiHFR9020 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

Note

a. See device orientation.

PRODUCT SUMMARY

VDS (V) - 50

RDS(on) (Ω)V

GS = - 10 V 0.28

Qg (Max.) (nC) 14

Qgs (nC) 6.5

Qgd (nC) 6.5

Configuration Single

P-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free IRFR9020PbF IRFR9020TRPbFaIRFR9020TRLPbFaIRFU9020PbF

SiHFR9020-E3 SiHFR9020T-E3aSiHFR9020TL-E3aSiHFU9020-E3

SnPb IRFR9020 IRFR9020TRaIRFR9020TRLaIRFU9020

SiHFR9020 SiHFR9020TaSiHFR9020TLaSiHFU9020

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS - 50 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at - 10 V TC = 25 °C ID

- 9.9

ATC = 100 °C - 6.3

Pulsed Drain CurrentaIDM - 40

Linear Derating Factor 0.33 W/°C

Single Pulse Avalanche EnergybEAS 440 mJ

Repetitive Avalanche CurrentaIAR - 9.9 A

Repetitive Avalanche EnergyaEAR 4.2 mJ

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 90350

2S-Pending-Rev. A, 10-Jun-08

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A

c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C.

d. 0.063" (1.6 mm) from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

Maximum Power Dissipation TC = 25 °C PD42 W

Peak Diode Recovery dV/dtcdV/dt 5.8 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA - - 110

°C/WCase-to-Sink RthCS -1.7-

Maximum Junction-to-Case (Drain) RthJC --3.0

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 50 - - V

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V

Gate-Source Leakage IGSS V

GS = ± 20 V - - ± 500 nA

Zero Gate Voltage Drain Current IDSS

VDS = max. rating, VGS = 0 V - - 250 µA

= 0.8 x max. rating, V

= 0 V, T

= 125 °C

- - 1000

Drain-Source On-State Resistance RDS(on) V

GS = - 10 V ID = 5.7 Ab- 0.20 0.28 Ω

Forward Transconductance gfs VDS ≤ - 50 V, IDS = - 5.7 A 2.3 3.5 - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 9

- 490 -

pFOutput Capacitance Coss - 320 -

Reverse Transfer Capacitance Crss -70-

Total Gate Charge Qg

VGS = - 10 V

ID = - 9.7 A, VDS = 0.8 x max.

rating, see fig. 16

(Independent operating

temperature)

-9.414

nC Gate-Source Charge Qgs -4.36.5

Gate-Drain Charge Qgd -4.36.5

Turn-On Delay Time td(on)

VDD = - 25 V, ID = - 9.7 A,

RG = 18 Ω, RD = 2.4 Ω, see fig. 15

(Independent operating temperature)

-8.212

Rise Time tr -5766

Turn-Off Delay Time td(off) -1218

Fall Time tf -2538

Internal Drain Inductance LD

Between lead,

6 mm (0.25") from

package and center of

die contact.

-4.5-

Internal Source Inductance LS-7.5-

Document Number: 90350 www.vishay.com

S-Pending-Rev. A, 10-Jun-08 3

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbol

showing the

integral reverse

p - n junction diode

--- 9.9

Pulsed Diode Forward CurrentaISM --- 40

Body Diode Voltage VSD TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb--- 6.3V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb56 110 280 ns

Body Diode Reverse Recovery Charge Qrr 0.17 0.34 0.85 nC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

www.vishay.com Document Number: 90350

4S-Pending-Rev. A, 10-Jun-08

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 6 - Typical Source-Drain Diode Forward Voltage

Fig. 7 - Breakdown Voltage vs. Temperature

Fig. 8 - Normalized On-Resistance vs. Temperature

Document Number: 90350 www.vishay.com

S-Pending-Rev. A, 10-Jun-08 5

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 12 - Maximum Drain Current vs. Case Temperature

www.vishay.com Document Number: 90350

6S-Pending-Rev. A, 10-Jun-08

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 13a - Maximum Avalanche vs. Starting Junction

Temperature

Fig. 13b - Unclamped Inductive Test Circuit

Fig. 13c - Unclamped Inductive Waveforms

Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

VDS

VDD

VDS

Document Number: 90350 www.vishay.com

S-Pending-Rev. A, 10-Jun-08 7

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 15a - Switching Time Waveforms Fig. 15b - Switching Time Test Circuit

Fig. 16a - Basic Gate Charge Waveform Fig. 16b - Gate Charge Test Circuit

VGS

10 %

90 %

VDS

td(on) trtd(off) tf

QGS QGD

Charge

- 10 V

www.vishay.com Document Number: 90350

8S-Pending-Rev. A, 10-Jun-08

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Fig. 17 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http:/ /www. vishay.com/ppg?90350.

P.W.Period

dI/dt

Diode recovery

dV/dt

Ripple ≤5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

= - 10 V*

Driver gate drive

D.U.T. I

waveform

D.U.T. V

waveform

Inductor current

D = P.W.

Period

* VGS = - 5 V for logic level and - 3 V drive devices

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by RG

• ISD controlled by duty factor "D"

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Compliment N-Channel of D.U.T. for driver

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1

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