29-293 wisn output INFRARED EMITTERS 880 nmT1 PLASTIC PACKAGE TEMT1288 SERIES PACKAGE OUTLINE | o.1s -0.129 2.32 - 2.08) 0.200 - 0.220 (8.08 - 5.59) foo : 0.007 (0.43 - 0.98) 0.600 is) MN 2.050 Zp OM. 4 DIMENSIONS: asset an (= Flat Side (3.81 - 4.32) Denotes INCHES Cathode CO . . (Miltimeters} Laad Centers 0.050 (1.27) Nominal 0.017 - 0.023 {0.43 - 0.59) sa. Lead Cross Section The 880nm wavelength significantly improves the coupling efficiency to typical phototran- sistors. RELATIVE OUTPUT, & y .- hs a / =e ABSOLUTE MAXIMUM RATINGS WAVELENGTH IM NANOMETERS Spectral Matching Comparison Average Power Dissipation: 80mW Derate Linearly from 25C: -1.0mW/C Average Forward Current: 50mA TOTAL RADIANT OUTPUT POWER Reverse Voltage: 3.0V Operating & Storage Temp.: -40 to +85C Part Number Minimum Output Half Angie Soldering Time @ 260C TEMT1288A 1.0mW @ 20mA 20 1/16 From Case: 5 seconds TEMT1288B 2.0mW @ 20mA 20 Peak Pulse Current TEMT1288C 3.0mW @ 20mA 20 100pusec Pulse, 10pps: 0.3A TEMT1288D 4.0mW @ 20mA 20 FEATURES m@ GaAlAs heterostructure material. Emits at 880nm m Super High Conversion Efficlency/Maximum power output @ 2x Total Radiant Power output of 940nm product m Increased coupling efficiency to Silicon photo- transistors @ Standard T1 (3mm) plastic package for cost effective, commercial use m 20 Beam Angle APPLICATIONS @ TV Remote controls @ Disk Drives @ Tape Drives @ Printers @ Optical Encoders m Solid State Relays @ Photoelectric Controls B Slotted Switches B Reflective Switches @ Intrusion Alarms = Smoke Detectors DESCRIPTION The TEMT1288 series is Gallium Aluminum Arsenide high output infrared emitting diodes in T1 plastic packages. They emit non-coherent, infrared energy at 940nm and provide significantly improved coupling efficiency to silicon phototransistors. These devices are constructed with (LPE) solution grown diodes for the highest conversion efficiency and long, useful operating life span. a7 THREE-FIVE SYSTEMS, INC. Optoelectronics Group. =u Ts "TEL: 602-496-0035; FAX: 602-496-0168 7-20 THREE-FIVE SYSTEMS, LTD. Swindon, U.K. TEL: (0793) 618835; FAX: (0793) 614127 HIGH OUTPUT INFRARED EMITTERS 880 nmT1 PACKAGE TEMT1288 SERIES ELECTRO-OPTICAL CHARACTERISTICS Symbol Parameter Conditions (TA = 25C) Min. Typ. | Max. Units APo/AT; Temp. Coef. of Power Output Ip = 20mMA 0.53 %/ C AVr/AT| Temp. Coef. of Forward Voltage le = 20mA -1.8 mv/C Ve Forward Voltage Ip = 20mMA 1.3 1.75 Vv Ra Dynamic Resistance lp = 20mMA 1.5 Q ge Half Angle Between Half Radiant Intensity Points 20 Deg. A peak Peak Wavelength lp = 20mA 880 nm AA Line Halfwidth Ip = 20mA 80 nm ln Reverse Current Va = -3.0V 10 uA tr Rise Time lpeak = 10MA 0.6 psec tr Fall Time Ipeak = 10MA 0.75 psec *Typical off-axis angle at which the radiant intensity is hall the axial radiant intensity. TYPICAL CHARACTERISTICS 80 30 0 5 4 a 5 20 = 10sec, 100Hz oe n = n 10 e Ta = 25C 5 = 5 Pulsed 3 a 8 > 20 > a z 2 E = + 20 > W 10 bc os 04 10 \ Ol 02 #04 08 O01 02 0406 10 20 002 005 Of 02 05 0102 05 10 20 40 9 40 80 120. 160 ip IN AMPS lp IN AMPS TEMPERATURE, C ir versus Normalized Power Out Forward Voitage versus IF Forward Voltage versus Temperature 2 2s 100 =s _ _ aed a = 2% Ee 2 5 0 a z 3 an) fi o 3 0 & <= wi wW 10 a a 10 10 107 Cea" - -20 o 2" 60 PULSE WIDTH (SECONDS) ANGULAR DISPLACEMENT FROM OPTICAL AXIS Max. Peak Pulse Current versus Pulse Width Typical Radiation Pattern THREE-FIVE SYSTEMS, INC. THREE-FIVE SYSTEMS, LTD. Optoelectronics Group Swindon, U.K. te s TEL: 602-496-0035; FAX: 602-496-0168 TEL: (0793) 618835; FAX: (0793) 614127 7-21