SHINDENGEN VX-2 Series Power MOSFET 2SK2182 (F3F50VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AS Single Pulse Avalanche Current T ch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3 Nm j Mounting Torque Ratings -55150 150 500 }30 3 9 3 25 3 2 0.5 Unit V A W A kV Nm VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage AEjc The\mal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton toff Turn-Off Time 2SK2182( F3F50VX2 ) Conditions I D = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = }30V, VDS = 0V I D = 1.5A, VDS = 10V I D = 1.5A, VGS = 10V I D = 0.3mA, VDS = 10V I S = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 3A VDS = 10V, VGS = 0V, f = 1MHZ I D = 1.5A, VGS = 10V, RL = 100 Min. 500 Typ. 0. 9 2. 1 1. 8 3. 0 2. 5 15 400 30 90 45 90 Max. 250 }0. 1 2. 3 3. 5 1. 5 5. 0 Unit V EA S V /L nC pF 80 140 ns 2SK2182 Transfer Characteristics 6 Tc = -55C 25C 100C 5 Drain Current ID [A] 150C 4 3 2 1 0 VDS = 25V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2182 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 1.5A 1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [C] 150 2SK2182 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 0.3mA TYP -50 0 50 100 Case Temperature Tc [C] 150 2SK2182 Safe Operating Area 100 Drain Current ID [A] 10 10s 100s 200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance jc(t) [C/W] 0.01 10-5 0.1 1 10 100 10-4 10-3 2SK2182 10-1 Time t [s] 10-2 100 Transient Thermal Impedance 101 102 2SK2182 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss Crss 10 Tc=25C TYP 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK2182 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [C] 150 2SK2182 Gate Charge Characteristics 500 20 400 15 VDD = 400V VGS 200V 300 100V 10 200 5 100 ID = 3A 0 0 5 10 15 Gate Charge Qg [nC] 20 25 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS