SHINDENGEN
2SK2182 OUTLINE DIMENSIONS
RATINGS
(F3F50VX2)
500V 3A
VX-2 Series Power MOSFET N-Channel Enhancement type
(Unit : mm)
Case : FTO-220
Switching power supply of AC 100V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings iTc = 25j
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`150
Channel Temperature Tch 150
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCjID3
Continuous Drain CurrentiPeak) IDP 9A
Continuous Source CurrentiDCjIS3
Total Power Dissipation PT25 W
Single Pulse Avalanche Current IAS Tch = 253A
Dielectric Strength Vdis Terminals to case, AC 1 minute 2kV
Mounting Torque TOR i Recommended torque : 0.3 N¥m j0.5 N¥m
2SK2182( F3F50VX2 )VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 500 V
Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V 250 ÊA
Gate-Source Leakage Current IGSS VGS = }30V, VDS = 0V }0.1
Forward Tran]conductance gfs ID = 1.5A, VDS = 10V 0.9 2. 1 S
Static Drain-Source On-]tate Resistance RDS(ON) ID = 1.5A, VGS = 10V 1.8 2. 3 ¶
Gate Threshold Voltage VTH ID = 0.3mA, VDS = 10V 2.5 3. 0 3.5 V
Source-Drain Diode Forwade Voltage VSD IS = 1.5A, VGS = 0V 1.5
The\mal Resistance Æjc junction to case 5.0 /L
Total Gate Charge QgVDD = 400V, VGS = 10V, ID = 3A 15 nC
Input Capacitance Ciss 400
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ30 pF
Output Capacitance Coss 90
Turn-On Time ton ID = 1. 5A, VGS = 10V, RL = 100¶45 80 ns
Turn-Off Time toff 90 140
0
1
2
3
4
5
6
0 5 10 15 20
2SK2182 Transfer Characteristics
VDS = 25V
pulse test
TYP
Tc = −55°C25°C
100°C
150°C
Gate-Source Voltage VGS [V]
Drain Current ID [A]
Static Drain-Source On-state Resistance
1
10
-50 0 50 100 150
2SK2182
VGS = 10V
pulse test
TYP
ID = 1.5A
Case Temperature Tc [°C]
Static Drain-Source On-state Resistance RDS(ON)
[Ω]
Gate Threshold Voltage
0
1
2
3
4
5
-50 0 50 100 150
2SK2182
VDS = 10V
ID = 0.3mA
TYP
Case Temperature Tc [°C]
Gate Threshold Voltage VTH
[V]
Safe Operating Area
0.01
0.1
1
10
100
110 100 1000
2SK2182
100µs
Tc = 25°C
Single Pulse
200µs
1ms
10ms
DC
10µs
Drain-Source Voltage VDS [V]
Drain Current ID [A]
RDS(ON)
limit
Transient Thermal Impedance
0.01
0.1
1
10
100
2SK2182
10-5 10-4 10-3 10-2 10-1 100101102
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Time t [s]
Transient Thermal Impedance θjc(t) [°C/W]
Capacitance
10
100
1000
020 40 60 80 100
2SK2182
0.005
Tc=25°C
TYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
Capacitance Ciss Coss Crss [pF]
0
20
40
60
80
100
050 100 150
2SK2182 Power Derating
Power Derating [%]
Case Temperature Tc [°C]
0
100
200
300
400
500
0 5 10 15 20 25
2SK2182
0
5
10
15
20
200V
Gate Charge Characteristics
ID = 3A
100V
VDD = 400V VGS
VDS
Gate Charge Qg [nC]
Drain-Source Voltage VDS [V]
Gate-Source Voltage VGS [V]
