koa -THOMSON Jf SiS omoa IRF830/Fl IRF831/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss Ros(on) Ib IRF830 500 V 1.50 4.5 A IRF830F 500 V 1.59 3A es 450 V 159 45A IRF831Fl 450 V 159 3A AVALANCHE RUGGEDNESS TECHNOLOGY a 100% AVALANCHE TESTED a REPETITIVE AVALANCHE DATA AT 100C a ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING a SWITCH MODE POWER SUPPLIES (SMPS) = CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 6 (1) INTERNAL SCHEMATIC DIAGRAM (2) s (3) Symbol Parameter Value Unit IRF 830 | 831 830FI | 831Fi Vos |Drain-source Voltage (Vas = 0) 500 450 500 450 Vv Voer |Drain- gate Voltage (Res = 20 kQ) 500 450 500 450 Vv Ves |Gate-source Voltage + 20 vi Ip Drain Current (cont.) at To = 25 C 4.5 4.5 3 3 A Ib Drain Current (cont.) at T, = 100 C 3 3 1.8 1.8 A lom(*) |Drain Current (pulsed) [ 15 15 15 15 A Ptr __|Total Dissipation at T. = 25 C | 100 35 w Derating Factor 0.8 0.28 wc Tstg |Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature . 150 c (*) Pulse width limited by safe operating area June 1992IRF830/FI - IRF831/FI THERMAL DATA TO-220 ISOWATT220 | Rihj-case | Thermal Resistance Junction-case Max 1.25 3.57 C/W Rinj-amy |Thermal Resistance Junction-ambient Max 62.5 OCW Rine-s Thermal Resistance Case-sink Typ 0.5 C/W TI Maximum Lead Temperature For Soidering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol , Parameter Max Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 4.5 A (pulse width limited by Tj max, 5 < 1%) _ Eas Single Pulse Avalanche Energy 280 mJ (starting T) = 25 C, Ip = lar, Voo = 25 V) Ear Repetitive Avalanche Energy 7.4 mJ (pulse width limited by T; max, 5 < 1%) laR Avalanche Current, Repetitive or Not-Repetitive 2.5 A (Te = 100 C, pulse width limited by Tj max, 8 < 1%) Lt. ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit VisRyoss |Drain-source ln =250pHA Vas =0 Breakdown Voitage for IRF830/830FI 500 Vv for IRF831/831 Ft 450 Vv Joss Zero Gate Voltage Vos = Max Rating ! 250 HA Drain Current (Ves = 0) |Vps = Max Rating x 0.8 T, = 125 C 1000 HA lass Gate-body Leakage Ves=+20V + 100 nA _ [Current (Vos = 0) |. . _ ON (*) Symbol " Parameter Test Conditions Min. | Typ. | Max. Unit | Vasin) |Gate Threshold Voltage|Vos = Vas Ip = 250 uA 2 4 Vv Roston) {Static Drain-source On |Ves=10V Ip =2.5A 1.5 Q Resistance _ ID(on) On State Drain Current [Vos > lp(on} X Rosionjymax Ves =10V] 4.5 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. | Max. Unit Qts (*) |Forward Vos > Ipton) X Rostenmax Ip =2.5A 2.7 S _|Transconductance _ _ _ Ciss Input Capacitance Vos=25V f=1MHzZ Vaes=0 800 pF Coss Output Capacitance 130 pF Criss Reverse Transfer 55 pF L Capacitance | | 2/7 ee re ee Sa SGS-THOMSON J7 imickostzcrromes 232ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD IRF830/Fi - |RF831/FI l Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit | tajon} Turn-on Time Voo = 225V In =2.5A 60 ns tr Rise Time Re = 152 42 ns tatty | Turn-off Delay Time (see test circuit) 155 ns tt Fall Time 50 ns Qg Total Gate Charge Ipb=4.5A Veg =10V 42 52 nc Voo = Max Rating x 0.8 { (see test circuit) SOURCE DRAIN DIODE Symbol ; Parameter yp Test Conditions Min. Typ. | Max. | Unit Iso }Source-drain Current | 4.5 A igsom(e) |Source-drain Current 15 A i (pulsed) - ee Vso (*) | Forward On Voltage Ispn = 4.5A Ves = 0 1.6 Vv ter Reverse Recovery Ison = 4.5 A di/dt = 100 A/us 430 ns 1 Time Vop = 100 V_ Tj = 150 C Qr Reverse Recovery 3.8 pc Charge (*) Pulsed: Pulse duration = 300 us, dutycycle 15% (#} Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 1,(A 1,(A) 4 4 2 & , 10" * iL] to, > 4 as 6 cc 2 4 - 10% 2 6 10 2 3 = D.C, OPERATION 105 4 6 a ; 2 10" 10 a Vp (VY) 10 L397 SiSonecmones Neen eeeIRF830/FI - IRF831/FI Thermal Impedance for TO-220 K 1071 0.02 | 0.01 NGLE PULSE - tobe 107? 10-5) 1074 1078 10? 107" ty (s) Derating Curve for TO-220 GC16310 Phot (W) 1 50 Tease ) Output Characteristics GC38920 8v 0 2 4 6 8 ,.(V) ee <7] 47 234 Thermal Impedance for ISGOWATT220 107! 0.01 SINGLE PULSE JUL {tol 107? yo 107 10 tom! 10 tp (s) Derating Curve for ISOWATT220 Prat (Ww) 30 20 0 50 100 Teogy (C) Output Characteristics GC35931 ofA) Ves =10V Yay a 0 10 20 30 40 y.(V) 7 Ses omomson NeerIRF830/FI - 1RF831/Fl Transfer Characteristics Ip (A) 10 Q 2 4 6 8 Vgs (V) Static Drain-source On Resistance GC35950 Roston) (9) 2.0 0.5 0 2 4 6 8 1,(A) Gate Charge vs Gate-source Voltage Ves (V) 10 Vos = 400V 0 10 20 30 46 Qg(nc) iy SGS-THOMSON MICROELECTRONICS Transconductance GC35940 gis(S) Vos >! pony XR os(on)max Q 1 2 3 4 5 1,(A) Maximum Drain Current vs Temperature Ip (A) 0 50 100 150 T.(%) Capacitance Variations C(pF) 1200 900 600 300 0 20 40 60 80 Wdv) 5/7 235IRF830/F1 - IRF831/Fl Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Vipr)oss Ros(on) (norm) norm Ves=0 Ip =2502A 20 1.5 1.0 1.0 0.9 0.5 Ves=10V Ip =2.5A 0.8 0 -50 o 50 100 T, (C) -50 0 50 100 T, (C) Source-drain Diode Forward Characteristics GC3B790 er pre 0.6 0.7 0.8 0.9 1.0 Vo.v) Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Vipr)pss L Vo o 44 2200 3.3 Sc05970 7 SS THOMSON aIRF830/FI - IRF831/Fl Switching Time Test Circuit Gate Charge Test Circuit Vo vv | a7ka | KA erconr R_ 22a0 | 3.3 T pe pF Yoo eu _| 1 g=CONST > Vo _ _ V;=20V=Vewx 100 D.U.T. JL - | le Eo Ye te O * L $C05990 +t P. SCOBDOD 77 ky, SGS-THOMSON ee i MICROELECTRONICS 237