940A
INVERTER GRADE THYRISTORS Hockey Puk Version
ST733C..L SERIES
1
Bulletin I25188 rev. A 04/00
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case style TO-200AC (B-PUK)
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
IT(AV) 940 A
@ Ths 55 °C
IT(RMS) 1900 A
@ Ths 25 °C
ITSM @ 50Hz 20000 A
@ 60Hz 20950 A
I2t@
50Hz 2000 KA2s
@ 60Hz 1820 KA2s
VDRM/VRRM 400 to 800 V
tq range 10 to 20 µs
TJ- 40 to 125 °C
Parameters ST733C..L Units
Major Ratings and Characteristics
ST733C..L Series
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Bulletin I25188 rev. A 04/00
ST733C..L 75
Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
VVmA
04 400 500
08 800 900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 2200 1900 3580 3100 6800 5920
400Hz 2050 1660 3600 3130 3750 3240
1000Hz 1370 1070 2900 2450 2120 1780 A
2500Hz 500 370 1220 980 960 770
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
ITM
180oel
180oel 100µs
ITM ITM
Current Carrying Capability
V
IT(AV) Max. average on-state current 940 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1900 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one half cycle, 20000 t = 10ms No voltage
non-repetitive surge current 20950 A t = 8.3ms reapplied
16800 t = 10ms 100% VRRM
17600 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 2000 t = 10ms No voltage Initial TJ = TJ max
1820 t = 8.3ms reapplied
1410 t = 10ms 100% VRRM
1290 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 20000 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST733C..L Units Conditions
On-state Conduction
KA2s
ST733C..L Series
3
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Bulletin I25188 rev. A 04/00
VTM Max. peak on-state voltage 1.63 ITM= 1700A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 600 TJ = 25°C, IT > 30A
ILTypical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST733C..L Units Conditions
On-state Conduction
1.09 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.20 (I > π x IT(AV)), TJ = TJ max.
V
0.32 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.29 (I > π x IT(AV)), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt
of turned-on current Gate pulse: 20V 20Ω, 10µs 0.5µs rise time
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = -40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST733C..L Units Conditions
1000 A/µs
tdTypical delay time 1.5
Min Max
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST733C..L Units Conditions
Blocking
500 V/µs
75 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 60
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST733C..L Units Conditions
WT
J = TJ max., f = 50Hz, d% = 50
20
5
VT
J = TJ max, tp ≤ 5ms
200 mA
3V
TJ = 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated VDRM applied
µs
tqMax. turn-off time 10 20
ST733C..L Series
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Bulletin I25188 rev. A 04/00
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled
junction to heatsink 0.031 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.005 DC operation double side cooled
F Mounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g
Parameter ST733C..L Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AC (B-PUK) See Outline Table
K/W
Single Side Double Side Single Side Double Side
180°0.009 0.009 0.006 0.006
120°0.011 0.011 0.011 0.011
90°0.014 0.014 0.015 0.015 K/W TJ = TJ max.
60°0.020 0.021 0.021 0.022
30°0.036 0.036 0.036 0.036
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Ordering Information Table
5689
ST 73 3 C 08 L H K 1
34 10
7
Device Code
12
1- Thyristor
2- Essential part number
3- 3 = Fast turn off
4- C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- L = Puk Case TO-200AC (B-PUK)
7- Reapplied dv/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
10 CN DN EN -- --
12 CM DM EM FM * --
15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK H
tq(µs)
* Standard part number.
All other types available only on request.
10
ST733C..L Series
5
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Bulletin I25188 rev. A 04/00
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Outline Table
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
53 (2.09) DIA. MAX.
58 .5 (2.3 ) D IA. M A X .
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
36.5 (1.44)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30° 60°
90°
120° 180°
Average On-state Current (A)
Conduction Angle
M aximum Allow able Heatsink Tem perature (°C)
ST 733C ..L Series
(Single Side Cooled)
R (DC ) = 0.073 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
DC
30°60°
90°
120°180°
A verage O n-sta te C urrent (A)
Conduction Period
Maximum Allow able Heatsink Temperature (°C)
ST733C ..L Series
(Single Side Cooled)
R (DC ) = 0.073 K/W
thJ-hs
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST733C..L Series
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Bulletin I25188 rev. A 04/00
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
30°60°90°120°180 °
Av erage O n -state C urre nt (A )
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 33C ..L Se rie s
(Double Side Cooled)
R (DC ) = 0.031 K/W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
M axim um Allow able Heatsink Tem perature (°C)
ST733C..L Series
(Double Side C ooled)
R (D C ) = 0.031 K/W
thJ-hs
0
500
1000
1500
2000
2500
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST733C..L Series
T = 125°C
J
0
500
1000
1500
2000
2500
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maxim um Average O n-state Pow er Loss (W )
Av erage O n-sta te C urre nt (A )
ST733C ..L Se ries
T = 125°C
J
8000
10000
12000
14000
16000
18000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
ST733C ..L Series
Initial T = 12 5°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applie d Follo wing Surge.
RRM
8000
10000
12000
14000
16000
18000
20000
0.01 0.1 1
Peak Half Sine W ave On -state C u rrent (A)
P u ls e T r a in D u ra t io n ( s)
Versus Pulse Train Duration. Control
In itia l T = 1 25 °C
N o V o lt a g e R e a p p lie d
Rated V Rea pplie d
Of C o nd uc tion M a y No t Be Ma intaine d.
Maximum Non Repetitive Surge Current
RRM
J
ST733C..L Series
ST733C..L Series
7
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Bulletin I25188 rev. A 04/00
Fig. 10 - Thermal Impedance Z thJC Characteristic
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
0.511.522.533.544.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V )
T = 125°C
J
ST733C..L Series
0.001
0.01
0.1
0 .00 1 0 .01 0 .1 1 1 0 10 0
Square Wave Pulse Duration (s)
th J - h s
Transie nt Th erm al Im peda nce Z (K/W )
ST733C..L Series
Steady State V alue
R = 0.073 K/W
(Single Side Cooled)
R = 0.031 K/W
(D ouble Side C oole d)
(D C O p e ra t io n )
thJ-hs
thJ-hs
0
50
100
150
200
250
300
350
400
450
10 20 30 40 50 60 70 80 90 1 00
Rate O f Fall Of O n-state C urren t - di/dt (A/µs)
M a xim um Rev erse Rec ove ry C harg e - Qrr (µC)
500 A
I = 15 00 A
1000 A
ST7 33C ..L Se rie s
T = 125 °C
J
TM
0
50
100
150
200
250
10 20 30 40 50 60 70 80 90 100
M a xim um Reve rse R ec o very C urrent - Irr (A )
Rate O f Fall Of Forward Current - di/dt (A/µs)
I = 1500 A
1000 A
500 A
ST733C ..L Se ries
T = 125 °C
J
TM
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Base w idth (µs)
Pe ak O n -sta te C urre nt (A )
1000
1500
3000
200
ST733C ..L Series
Sinusoidal pulse
T = 40°C
C
5000
Snubber circuit
R = 10 ohm s
C = 0 .47 µ F
V = 80% V
s
s
DDRM
1E4
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B asew idth (µs)
200
5000
ST733C..L Series
Sinu so ida l p uls e
T = 55°C
C
1000
3000
Snubber circuit
R = 10 ohm s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E1
1500
ST733C..L Series
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Bulletin I25188 rev. A 04/00
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E 2
1E 3
1E 4
1E 5
1E 1 1E 2 1E 3 1E 4
50 Hz
400
2500
100
1000
1500
200
Pulse Basewidth (µs)
5000
S nubbe r circuit
R = 1 0 o hm s
C = 0.47 µF
V = 80% V
s
s
DDR M
S T 733C..L S eries
T r ape zoida l puls e
T = 4 0 °C
di/dt = 50A/µs
C
1E 4
500
2000
3000
1E 1 1E 2 1E 3 1E 4
50 Hz
400
2500
100
1000
1500
200
Pulse Basewidth (µs)
S nubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
S T 7 33C..L S eries
T rapezoidal puls e
T = 55 °C
di/ dt = 50A/µs
C
3000
s
s
DDR M
tp
1E 1
500
2000
1E 2
1E 3
1E 4
1E 5
1E 1 1E 2 1E 3 1E 4
50 H z
400
2500
100
1000
1500
200
Pulse Basewidth (µs)
5000
S nubbe r circuit
R = 1 0 o hm s
C = 0.47 µF
V = 80% V
s
s
DDRM
S T 733C..L S eries
T r ape zoida l puls e
T = 4 0 °C
di/ dt = 100A/µs
C
1E 4
500
2000
3000
1E 1 1E 2 1E 3 1E 4
50 H z
400
2500
100
1000
1500
200
Pulse Basewidth (µs)
S nubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
3000
s
s
DDR M
S T 7 33C..L S eries
T rapezoidal puls e
T = 55 °C
di/ dt = 100A/µs
C
tp
1E 1
500
2000
1E1
1E2
1E3
1E4
1E5
1E11E21E31E4
Pulse B ase w idth (µs)
20 joules per pulse
2
1
0.5
10
5
Peak On -state C urrent (A)
3
ST733C ..L Series
Sinusoidal pulse
0.4
0.3
tp
1E4 1E1 1E2 1E3 1E4
Pulse Base w id th (µs)
20 jo u le s p er p u lse
2
1
0.5
10
5
0.4
0.3
ST733C ..L Series
Rectangular pulse
di/dt = 50A/µs
tp
1E1
3
ST733C..L Series
9
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Bulletin I25188 rev. A 04/00
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b )
(a)
(1) (2) (3)
In s tantaneou s Gate Cu rr ent (A)
a) Recommended load line for
b) Recommended load line for
<=3 0% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10 ohms ; tr<=1 µs
tr<=1 µs
Device: ST733C..L Series
(1) P GM = 10W , tp = 20ms
(2) P GM = 20W , tp = 10ms
(3) P GM = 40W , tp = 5ms
(4) P GM = 60W , tp = 3.3ms
R ectangular gate puls e
(4)
