PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain -- (Typ) o Collector-Emitter @ IC = 5.0 Adc Sustaining Voltage - @ 100 mA VCEO (sus) = 60 Vdc (M in) - 2N6050, 80Vdc . Monolithic Shunt - 2N6051, 2N6058 100 Vdc (Min) - 2N6052, 2N6059 Construction with Built-In Base-Emitter Resistors Rating Collector-Emitter 2N6057 (Min) Symbol Voltage Collector-Base Voltage Emitter-Base Voltage 2N6050 2N6051 2N605~' 2N6057 2N6058 2N6@y'~~ ~@:;):c,t+ :?,<.>,, >.,. .3,. "'<w> VCEO 60 80 VCB 60 80 VEg ~ v `y 5.s "~$:$?. tin it Vdc Vd C Vd C A 1~:~+c 8 1 r E ,. THERMAL + D K SEATING PLANE CHARACTERl$3~kJ.~ Characteritiic I "s~,., if Thermal Resistance, Juqo~#st,? Case ,.,.,,, Symbol I Rating 1.17 eJc I Unit Oclw I I STYLE 1: PIN 1. 8ASE 2. EMITTER CASE: COLLECTOR MI LLIMETERSI MIN [ MAX DIM INCHES MAX MIN I I I CASE Tc, TEMPERATURE (C) 11-03 TO-3 ) MOTOROM INC., 1979 0S3224 RI *ELECTRICAL CHARACTERISTICS (Tc = 25C uniess otherwise noted) Characteristic Symbol Min Max I Unit OFF CHARACTERISTICS Collector-Emitter (Ic= Sustain ing Voltage 100mAdc, Collector Cutoff ( 1) Vdc VCEO(SUS) IB =0) 2N6050, 2N6057 2N6051 , 2N6058 2N6052, 2N6059 -- 60 Current 80 -- 100 -- ICEO (vCE=30vdC, lB=O) 2N6050, 2N6057 -- 1.0 (vCE=40vdC, lB=O) 2N6051, 2N6058 -- 1.0 (vCE=50vdC, lB=O) 2N6052, 2N6059 -- 1.0 Collector Cutoff (VCE Current .$ ,<,. \*:,' ,$.w~$~~a$$+ ICEX -- = Rated VCEO, vBE(off) = 1.5 Vdc) {VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150C) ,. I Emitter Cutoff (VBE Current `5.0 Vdc, IC=O) ON CHARACTERISTICS DC Current (1) Gain hF F (1c 6. OAdc, = (lc= Volatage IB = 24 mAdc) 12 Adc, lB= Base-Emitter ~... ":. *F%$~ ( sat) .;~<,$:~,"t* * .,, Voltage (1c = 12 Adc, iB = 120mAdc) Base-Emitter ?, ,.+. `,+ ~!$ij.'~p,,\\,.\<* I `-.t*,.a 120mAdc) Saturation 2.0 ,,?E,, 73Q t/>J }' ?;:?;.,, .'%X>P$OO $. .,..>~$. #:$* .*.,, $:$ `CE ( sat)yt, ~#f ~, -:>'., -- R:\:,?.? >:'f~~... ( IC = 12 Adc, VCE = 3.0 Vdc) Saturation mAdc mAdc ,,:>t~, .. ,,*,. ;. :'?~.x=,, ~,.$\ .,.,>- (1C = 6.0 Adc, VCE = 3.0 Vdc) Collector-Emitter :,...2.: ` ~$.g ~?.:r -- IEBO t\* ~"~~ ~, `*t:!,\ ` ~< ,,,!~:'.}+ ~$.:,: ,, On Voltage -- I 18,000 -- Vd C -- 2.0 3.0 -- 4.0 Vd c -- 2.8 Vd c -- MHz 500 pF (1c = 6.0 Adc, VCE = 3.0 Vdc) DYNAMIC Magnitude Current CHARACTERISTICS of Common Transfer Emitter .,'. Small-Signal Capacitance (VCB= 10vdC, Small-Signal iE `O, Current f=o.l For#~:& ,., `.']. `y;+" \ ,, ,,:. :+i':i y,>,,~e,,,,t ,.<. ,,,+,\ -- Cob -- *.,,., \+,*.-, "`.?~.iti,, ,. ,.,?,., .\ Gain 4.0 [hfel .,. `$~$~$,@~050/2N6052 ~ `v>.>,,.> "T?:2N605712N6059 ,~::: ..~~'J/\ MHz) o `.J:~ Short Circuit Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output .,,, .s~ hfe 300 -- 300 -- (1C = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 :.~..~~f$t,,:$ :.~, ,., >,1 .' "Indicates JEDEC Registered Data \.,.,,> />}>$ (l)puIse tern: pulse Width = 300 us, ~~$~$~~e{e = 2.0%. FIGURE 3 - SWITCHING TIMES 0.5 1,0 5.0 10 Vcc -30 v RB & Rc @;l ED~OtiaTAIN OESIRED CURRENT DI, M~,@{~$y RECOVERY TYPES, e.g., M.@5#.Q~M ABOVE IB -100 mA ~~$~~@SEO BELDW IB w 100 mA .!,!-.,, .:,$ V2 .i:\:~%:\;.!:!y$, ,B approx ~,w -- +,2v-\~L ------ 5.0 LEVELS RC SCOPE TuT r------ ,' I I 0- VI ---- rl ---- - 1 _5' J =0'0 mz"s ~~~-~5~ +4,0 v I 1,0 y 7 - For td and tr, 07 is disconnected and VZ = O tf, tf<lOns DUTY CYCLE = 1,0% 2.0 -1 J 0.5 0.2 0.1 0.2 For NPN test circuit 3.0 reverse diode and voltege polarities. IC, COLLECTOR MOTOROLA @ CURRENT Semiconductor Products Inc. (AMP) 10 20 0 FIGURE 4 - THERMAL RESPONSE 1,0 A 0.7 0.5 0.3 r = 0.2 { H 0 CURVES APPLY FOR POWER ~ PULSE TRAIN SHOWN ,*!. `*{,3, REAOTIMEAttl ,s ?,.,.,\.*. TJ(pk) -Tc = I 1 0.1 007 k r-m 20 `-.1 1.1.1 `" 0.,1y; { 10 5.0 2.0 i o 0.1 0,05 10 20 30 50 70 10U VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) VOLTAGE (VQ&?$,W]f] ,':~ There are two limitations on thq,@%&qr$andIing ability of a transistor: aver~e junction temperature and second breakdown. Safe operating area curves indicate Ic - VCE fi~~t$~~tfie transistor that must be obsewed for reliable operation; i.e., the transistor must not be su~ected to greater dissipation than the cu+~#~Q&%te. VCE, COLLECTOR-EMITTER The data of Figures 5, @&d ~ is based on TJ(pk) valid for duty cycles to ~Q% p'&ded TJ(pk) < 200C limitations will reduq@~~# Rower ,.>. ,,``:~j.:.>>+.$~ that = 200C; TC is variable depending on conditions. Second breakdown pulse limits are TJ(pk) may be calculated frOm the data in Figure 4. At high case temperatures, thermal can be handled to values less than tha limitations imposed by second breakdown. (See AN-41 5). FIGURE 9 - CAPACITANCE 500 300 200 200 I 100 I 111111 70 -- -- 50 30 1,0 111111 1 100 2.0 5.0 10 20 50 100 200 f, FREOUENCY (kHz) 500 1000 50 0.1 -- -- I I 0.2 -- 1 2N6050/2N6[ 052tiiiiii 1 I 1 Ill 2N6057/2N6059 0.5 1.0 Mo~oRoLA J 1 , 2.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) I (M) I Semicond.ct.rpr.d.cts /... 20 50 100 PNP 2N6050, 2N6051, 2N6052 NPN 2N6057, 2N6058, 2N6059 FIGURE 10 - DC CURRENT 20,000 GAIN 40,000, 1 10,000 5000 3000 2000 1000 I I = 500 1,000 I I I I I I I Iwhl I I I . 300 200 0.2 0.3 1.0 0.5 Ic, COLLECTOR 2,0 3.0 CURRENT 5.0 10 20 (AMP) 3.0 3.0 2.6 2.6 2.2 2.2 1.8 1.8 1.4 1.4 1.0 0.5 1.0 0.5 1.0 1.0 3.0 2.0 5.0 IB, BASE CURRENT FlGuRE12- "ON" 20 10 30 50 (mA) VOLTAGES I I I I I 1!11 I 250 I 0.2 0.3 0.5 1.0 Ic, COLLECTOR MOTOROLA @ 2.0 CURRENT 3.0 (AMP) Semiconductor Products Inc. Ko 10 '20 2N6050, PNP 2N6051, 2N6052 2N6057, FIGURE 0.2 0.3 1.0 0.5 2.0 3,0 13 - TEMPERATURE 10 5.0 NPN 2N6058, COEFFICIENTS 20 . , , REVER5E+ -0.6 -0.4 I >Y -0.2 0 +0.2 15 - DARLINGTON FbRwAfi~ t0,4 VBE, BASE-EMITTER FIGURE 2N6059 to.8 tO.6 VOLTAGE tl .0 tl (VO LTS) SCHEMATICS Collector Collector NPN 2N6057 2N6058 2N6059 ~------------ 4 __T \ I Base 11' ~ Base o I I I L-____ L- -_+___ d MOTOROLA I I =50 _______ .__J b Emitter Emitter @ -5.0 k Semiconductor Inc. .2 tl.4 I I MOTOROLA Semiconductor -@ BOX 20912. 7203-1 PRINTED lM USA 8-79 IMPERIAL llTHO B80716 m PHOENIX, Inc. Products ARIZONA 85036 A SUBSIDIARY OF MOTOROLA INC. DS-3224