DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
...designed forgeneral-purpose amplifier and low-speed switching
applications.
.High DC Current Gain —
hFE =3500 (Typ) @IC =5.0 Adc
oCollector-Emitter Sustaining Voltage –@100 mA
VCEO (sus) =60 Vdc (M in) –2N6050, 2N6057
80Vdc (Min) –2N6051, 2N6058
100 Vdc (Min) –2N6052, 2N6059
.Monolithic Construction with Built-In Base-Emitter
Shunt Resistors
2N6050 2N6051 2N605~’ “~$:$?.
Rating Symbol 2N6057 2N6058 2N6@y’~~ tin it
Collector-Emitter Voltage VCEO 60 80 ~@:;):c,t+ Vdc
:?,<.>,,>.,..3,.
Collector-Base Voltage VCB 60 80 “’<w> VdC
Emitter-Base Voltage v
VEg ~5.s ‘y Vd C
THERMAL CHARACTERl$3~kJ.~
Tc, TEMPERATURE (°C)
PNP NPN
2N6050 2N6057
2N6051 2N6058 ~~
2N6052 2N6059
,. Characteritiic “s~,., if ISymbol IRating IUnit I
Thermal Resistance, Juqo~#st,? Case eJc 1.17 Oclw I
,.,.,,,
1~:~+-
Ac
81
r+DK
ESEATING
PLANE
STYLE 1:
PIN 1. 8ASE
2. EMITTER
CASE: COLLECTOR
MI LLIMETERSI INCHES
DIM MIN [MAX MIN MAX
II I
CASE 11-03
TO-3
)MOTOROM INC., 1979 0S3224 RI
*ELECTRICAL CHARACTERISTICS (Tc =25°C uniess otherwise noted)
Characteristic Symbol Min IMax Unit
OFF CHARACTERISTICS
Collector-Emitter Sustain ing Voltage (1)VCEO(SUS)
(Ic= 100mAdc, IB =0) Vdc
2N6050, 2N6057 60 —
2N6051 ,2N6058 80 —
2N6052, 2N6059 100 —
Collector Cutoff Current ICEO
(vCE=30vdC, lB=O) 2N6050, 2N6057 —1.0
(vCE=40vdC, lB=O) 2N6051, 2N6058 t\*
(vCE=50vdC, lB=O)
—1.0
2N6052, 2N6059 ~“~~~, ‘*t:!,\
—1.0 ~< ‘
~$.:,:,,
,,,!~:’.}+
Collector Cutoff Current ICEX :,...2.:‘
.$ ,<,.
\*:,’
(VCE =Rated VCEO, vBE(off) =1.5 Vdc) mAdc
,$.w~$~~a$$+
{VCE =Rated VCEO, VBE(off) =1.5 Vdc, TC =150°C)
—
~$.g
I
Emitter Cutoff Current ,.
IEBO ~?.:r
—2.0
(VBE ‘5.0 Vdc, IC=O) mAdc
ON CHARACTERISTICS (1) ,,:>t~,
.. ,,*,.
:’?~.x=,,;.
~,.$
DC Current Gain \.,.,>-
hF F I?, ,.+. ‘,+
~!$ij.’~p,,\\,.\<* I—
(1C =6.0 Adc, VCE =3.0 Vdc) ,,?E,, 73Q 18,000
(IC =12 Adc, VCE =3.0 Vdc) t/>J}’
.’%X>P$OO
?;:?;.,, —
*$.
Collector-Emitter Saturation Volatage .,.
#:$
‘CE (sat)yt, .*.,,.>~$.
$:$ Vd C
(1c =6. OAdc, IB =24 mAdc) ~#f -:>’.,
~,R:\:,?.?
(lc= 12 Adc, lB= 120mAdc)
—
>:’f~~... 2.0
‘-.t*,.a —3.0
Base-Emitter Saturation Voltage ~...“:.
*F%$~ (sat) —
(1c =12 Adc, iB =120mAdc) 4.0 Vd c
.;~<,$:~,
“t*
*.,,
Base-Emitter On Voltage —2.8 Vd c
(1c =6.0 Adc, VCE =3.0 Vdc)
DYNAMIC CHARACTERISTICS ‘.J:~
.,,,
.,’. .s~
Magnitude of Common Emitter Small-Signal Short Circuit For#~:& [hfel 4.0
Current Transfer Ratio —
‘.’]. ,., MHz
(IC =5.0 Adc, VCE =3.0 Vdc, f=1.0 MHz) ‘y;+”
:+i’:i,,~e,,,,t\,,
,,:. y,>
,.<. ,,,+,\
Output Capacitance .,.‘$~$~$,@~050/2N6052 Cob
(VCB= 10vdC, iE ‘O, f=o.l MHz) —
‘v> “T?:2N605712N6059 500 pF
,~:::..~~’J/\.>,,.>~—
Small-Signal Current Gain 300
*.,,.,
\+,*.-,“‘.?~.iti,,,.
,.,?,., .\ hfe 300
(1C =5.0 Adc, VCE =3.0 Vdc, f=1.0 :.~..~~f$t,,:$ ——
“Indicates JEDEC Registered Data :.~, ,.,
>,1 .’
\.,.,,>/>}>$
(l)puIse tern: pulse Width =300 us, ~~$~$~~e{e =2.0%.
Vcc
-30 v
RB & Rc @;l ED~OtiaTAIN OESIRED CURRENT LEVELS
DI, M~,@{~$y RECOVERY TYPES, e.g.,
M.@5#.Q~M ABOVE IB -100 mA RC
~~$~~@SEO BELDW IB w100 mA TuT SCOPE
.!,!-.,, .:,$
V2 .i:\:~%:\;.!:!y$,
approx ~,w ,B r–––—– –1
rl J
_y7
+,2v-\~L ------ -- ,’ I
I I
0– ---- --–– -5’
VI 1=0’0 ~~~-~5~ -J
+4,0 v
mz”s For td and tr, 07 is disconnected
tf, tf<lOns and VZ =O
DUTY CYCLE =1,0%
For NPN test circuit reverse diode and voltege polarities.
@MOTOROLA
FIGURE 3 – SWITCHING TIMES
10
5.0
2.0
1,0
0.5
0.2
0.1
0.2 0.5 1,0 3.0 5.0 10 20
Semiconductor
IC, COLLECTOR CURRENT (AMP)
Products Inc.
●
o
0
FIGURE 4 – THERMAL RESPONSE
1,0
A0.7
0.5
0.3
0.2
0.1
r
=I
{H
0CURVES APPLY FOR POWER 1
~PULSE TRAIN SHOWN ,*!.
REAOTIMEAttl ‘*{,3,
,s ?,.,.,\.*.
TJ(pk) –Tc =
007 k
r-m
20 ‘-.1 1.1.1 ‘“
0.,1y; {
10
5.0
2.0 i
o
0.1
0,05
10 20 30 50 70 10U
VCE, COLLECTOR-EMITTER VOLTAGE (VQ&?$,W]f] VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
,’:~ VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on thq,@%&qr$andIing ability of atransistor: aver~e junction temperature and second breakdown. Safe operating
area curves indicate Ic – VCE fi~~t$~~tfie transistor that must be obsewed for reliable operation; i.e., the transistor must not be su~ected to
greater dissipation than the cu+~#~Q&%te.
The data of Figures 5, @&d ~is based on TJ(pk) =200°C; TC is variable depending on conditions. Second breakdown pulse limits are
valid for duty cycles to ~Q% p’&ded TJ(pk) <200°C TJ(pk) may be calculated frOm the data in Figure 4. At high casetemperatures, thermal
limitations will reduq@~~# Rower that can be handled to values less than tha limitations imposed by second breakdown. (See AN-41 5).
,.>.
,,‘‘:~j.:.>>+.$~
FIGURE 9 – CAPACITANCE
500
300
200
200
100
50
30
1,0 2.0 5.0 10 20 50 100 200 500 1000
100 I111111 1
I111111 1
70 —2N6050/2N6[
— — — — 2N6057/2N6059 1I1Ill 1
50 I I
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
052tiiiiii IJ
,
f, FREOUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
I(M) Mo~oRoLA Semicond.ct.rpr.d.cts /...
PNP NPN
2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059
FIGURE 10 –DC CURRENT GAIN
20,000
10,000
5000
3000
2000
1000
500
300
200
0.2 0.3 0.5 1.0 2,0 3.0 5.0 10 20
Ic,COLLECTOR CURRENT (AMP)
3.0
2.6
2.2
1.8
1.4
1.0
0.5 1.0
40,000, 1
I I II I I I Iwhl I
=1,000 II
II.
3.0
2.6
2.2
1.8
1.4
1.0
0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
FlGuRE12– “ON” VOLTAGES
I I I I I1!11 I
250I
0.2 0.3 0.5 1.0 2.0 3.0 Ko 10 ’20
Ic, COLLECTOR CURRENT (AMP)
@MOTOROLA Semiconductor Products Inc.
PNP NPN
2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059
FIGURE 13 – TEMPERATURE COEFFICIENTS
0.2 0.3 0.5 1.0 2.0 3,0 5.0 10 20
Collector
. , ,
REVER5E+ >Y IFbRwAfi~
-0.6 -0.4 -0.2 0+0.2 t0,4 tO.6 to.8 tl .0 tl .2 tl.4
FIGURE 15 – DARLINGTON SCHEMATICS
VBE, BASE-EMITTER VOLTAGE (VO LTS)
Base ~11’
L-____ –_+___
@
d
Emitter
MOTOROLA
Collector
NPN
2N6057
2N6058 4
~—————— __T
2N6059 \
I
Base oI
I
I-5.0 k=50 I
I
L– _______ .__J
b
Emitter
Semiconductor Inc.
I
I
–@ MOTOROLA
7203-1 PRINTED lM USA 8-79 IMPERIAL llTHO B80716
Semiconductor Products Inc.
BOX 20912. PHOENIX, ARIZONA 85036 ●ASUBSIDIARY OF MOTOROLA INC.
mDS-3224
