Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA General-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. * * * * * * Replacement for 2N3055 and Driver High Gain Darlington Performance Built-in Diode Protection for Reverse Polarity Protection Can Be Driven from Low-Level Logic Popular Voltage Range Operating Range -- -65 to + 200_C IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII 15 AMPERE POWER TRANSISTORS NPN SILICON DARLINGTON 60, 90, 120 VOLTS 120 WATTS MAXIMUM RATINGS (1) Rating Symbol 2N6576 2N6577 2N6578 Unit VCEO(sus) 60 90 120 Vdc Collector-Base Voltage VCB 60 90 120 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current -- Continuous -- Peak IC 15 30 Adc Base Current -- Continuous -- Peak IB 0.25 0.50 Adc Emitter Current -- Continuous -- Peak IE 15.25 30.5 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 120 0.685 Watts W/_C - 65 to + 200 _C Symbol Max Unit RJC 1.46 _C/W TL 265 _C Collector-Emitter Voltage Operating and Storage Junction Temperature Range TJ, Tstg CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10s. (1) Indicates JEDEC Registered Data. DARLINGTON SCHEMATIC COLLECTOR BASE [4k [ 50 EMITTER REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 90 120 -- -- -- Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N6576 2N6577 2N6578 Vdc Collector Cutoff Current (VCE = Rated Value) ICEO -- 1.0 mAdc Collector Cutoff Current (VCER = Rated VCEO(sus) Value, RBE = 10 k, TC = 150_C) ICER -- 5.0 mAdc Collector Cutoff Current VCEX = Rated VCEO(sus) Value, VBE(off) = 1.5 Vdc) ICEV -- 5.0 mAdc Collector Cutoff Current (VCB = Rated Value) ICBO -- 0.5 mAdc 100 500 2000 200 -- 5,000 20,000 -- -- -- 4.0 2.8 -- -- 4.5 3.5 VF -- 4.5 Vdc |hfe| 10 200 -- td -- 0.15 s ON CHARACTERISTICS DC Current Gain (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) (IC = 0.4 Adc, VCE = 3.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 15 Adc, IB = 0.15 Adc) (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) Base-Emitter Saturation Voltage (IC = 15 Adc, IB = 0.15 Adc) (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) Collector-Emitter Diode Voltage Drop (IEC = 15 Adc) -- Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common-Emitter Small-Signal Short-Circuit Current Transfer Ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS RESISTIVE LOAD (Figure 2) Delay Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = 0.1 Adc, tp = 300 s, Duty Cycle 2.0%) Rise Time Storage Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 0.1 Adc, tp = 300 s, Duty Cycle 2.0%) Fall Time * Indicates JEDEC Registered Data (1) Pulse test: Pulse Width 300 s, Duty Cycle IC, COLLECTOR CURRENT (AMP) 100 s 10 dc 5.0 2.0 BONDING WIRE LIMITED THERMAL LIMIT, SINGLE PULSE, TC = 25C SECOND BREAKDOWN LIMIT 1.0 0.5 0.2 5.0 ms 2N6576 2N6577 2N6578 0.1 0.05 1.0 ms TJ = 200C 2.0 -- 1.0 s -- 2.0 s tf -- 7.0 s 2.0%. 40 20 tr ts There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 40 60 100 150 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Rated Forward Biased Safe-Operating Area 2 Motorola Bipolar Power Transistor Device Data 5 VCE , COLLECTOR-EMITTER (VOLTS) 10 k hFE, DC CURRENT GAIN + 150C 5k 2k VCE = 3 Vdc 25C 1k - 30C 500 4 15 A 3 10 A 2 5A 1A 1 0.5 200 0.2 1.0 2.0 0.5 5.0 IC, COLLECTOR CURRENT (AMPS) 10 0.0001 15 0.0003 0.1 0.05 Figure 3. Collector Saturation Region 5 IC/IB = 100 4 3 - 30C 2 + 25C 1.5 +150C + 25C - 30C 2 1.5 1 0.5 0.5 0.5 1 5 2 IC, COLLECTOR CURRENT (AMPS) TJ = + 150C 3 1 0.2 VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = 3 V, 25C 4 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain 0.001 0.002 0.005 0.01 0.02 IB, BASE CURRENT (AMPS) 10 15 0.2 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Collector Saturation Voltage 0.1 0.7 10 15 Figure 5. Base-Emitter Voltage D = 0.5 0.5 0.3 0.2 0.2 0.1 P(pk) JC(t) = r(t) JC JC = 1.46 D CURVES APPLY FOR POWER t1 PULSE TRAIN SHOWN t2 READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.07 0.05 0.02 0.03 SINGLE PULSE 0.02 0.01 0.01 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME (ms) 20 30 50 70 100 200 300 500 700 1000 Figure 6. Thermal Response Motorola Bipolar Power Transistor Device Data 3 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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