2N6577 - ON Semiconductor - Datasheet.Live

Motorola Bipolar Power Transistor Device Data

   



General–purpose EpiBase power Darlington transistors, suitable for linear and

switching applications.

•Replacement for 2N3055 and Driver

•High Gain Darlington Performance

•Built–in Diode Protection for Reverse Polarity Protection

•Can Be Driven from Low–Level Logic

•Popular Voltage Range

•Operating Range — –65 to +200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N6576

ÎÎÎÎ

2N6577

ÎÎÎ

2N6578

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO(sus)

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

7.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.25

0.50

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current— Continuous

— Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

15.25

30.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

120

0.685

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.46

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/16″ from Case for 10s.

ÎÎÎÎÎ

ÎÎÎÎÎÎ

265

ÎÎÎ

(1) Indicates JEDEC Registered Data.

COLLECTOR

EMITTER

[

4 k

[

BASE

DARLINGTON SCHEMATIC



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N6576/D

 Motorola, Inc. 1995







15 AMPERE

POWER TRANSISTORS

NPN SILICON

DARLINGTON

60, 90, 120 VOLTS

120 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

  

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0) 2N6576

2N6577

2N6578

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

120

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated Value)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCER = Rated VCEO(sus) Value, RBE = 10 kΩ, TC = 150

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

VCEX = Rated VCEO(sus) Value, VBE(off) = 1.5 Vdc)

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCB = Rated Value)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 15 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

(IC = 0.4 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

100

500

2000

200

ÎÎÎÎ

—

5,000

20,000

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 15 Adc, IB = 0.15 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

4.0

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 15 Adc, IB = 0.15 Adc)

(IC = 10 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

4.5

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Diode Voltage Drop

(IEC = 15 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

4.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common–Emitter Small–Signal Short–Circuit Current T ransfer Ratio

(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

|hfe|

ÎÎÎÎ

200

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

RESISTIVE LOAD (Figure 2)

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = 0.1 Adc,

tp = 300 µs, Duty Cycle

2.0%)

ÎÎÎÎ

—

ÎÎÎÎ

0.15

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = 0.1 Adc,

tp = 300 µs, Duty Cycle

2.0%)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 0.1 Adc,

tp = 300 µs, Duty Cycle

2.0%)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 0.1 Adc,

tp = 300 µs, Duty Cycle

2.0%)

ÎÎÎÎ

—

ÎÎÎÎ

7.0

ÎÎÎ

µs

*Indicates JEDEC Registered Data

(1) Pulse test: Pulse Width

300 µs, Duty Cycle

2.0%.

BONDING WIRE LIMITED

THERMAL LIMIT, SINGLE PULSE,

TC = 25

SECOND BREAKDOWN LIMIT

Figure 1. Rated Forward Biased

Safe–Operating Area

5.0

10 20 150

0.2

0.5

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

2.0

2N6576

2N6577

2N6578

100

IC, COLLECTOR CURRENT (AMP)

0.1

40 100

0.05

2.0 TJ = 200

5.0

1.0 ms

5.0 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 1 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10%.

TJ(pk) may be calculated from the data in Figure 6. At high

case temperatures thermal limitations will reduce the power

that can be handled to values less than the limitations im-

posed by second breakdown.

  

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER (VOLTS)

10 k

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

5 k

1 k

Figure 3. Collector Saturation Region

0.5

0.0001 0.1

hFE, DC CURRENT GAIN

+ 150

–30

10 A

500

200 0.2 1.0 2.0 15

5 A

0.01 0.050.5 5.0 10 0.02

VCE = 3 Vdc

0.0050.0003 0.001 0.002

15 A

1 A

IB, BASE CURRENT (AMPS)

2 k

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

Figure 4. Collector Saturation Voltage

0.2 IC, COLLECTOR CURRENT (AMPS)

0.5

0.5 1 5 15

IC, COLLECTOR CURRENT (AMPS)

1.5

Figure 5. Base–Emitter Voltage

1.5

2 10

0.5

– 30

0.2 0.5 1 5 152 10

IC/IB = 100

+25

+150

VBE(sat) @ IC/IB = 100

VBE(on) @ VCE = 3 V, 25

– 30

+ 25

TJ = + 150

V, VOLTAGE (VOLTS)

Figure 6. Thermal Response

t, TIME (ms)

0.01

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

JC(t) = r(t)

JC = 1.46

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.7

0.5

0.3

0.1

7.02.0 3.0 5.0 10 20 30 50 100 200 300 10005000.1 0.2 0.3 0.5 1.00.7 70 700

  

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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2N6576/D

*2N6576/D*

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