AO4286
100V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 4A
R
DS(ON)
(at V
GS
=10V) < 68mΩ
R
DS(ON)
(at V
GS
=4.5V) < 92mΩ
100% UIS Tested
Symbol
V
The AO4286 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
100V
Drain-Source Voltage
100
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
20 85
30
Power Dissipation
B
P
D
W
T
A
=70°C 1.6
T
A
=25°C 2.5
A
I
D
4
3
T
C
=25°C
T
C
=70°C 25Pulsed Drain Current
C
Continuous Drain
Current
mJ
Avalanche Current
C
0.8 A4
Avalanche energy L=0.1mH
C
V
Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter Typ Max
V±20Gate-Source Voltage
Drain-Source Voltage
100
Maximum Junction-to-Ambient
A
°C/W
R
θJA
42
70 50
Rev 0: Nov. 2012
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AO4286
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.7 2.25 2.9 V
I
D(ON)
25 A
55.5 68
T
J
=125°C 104 127
72.5 92 mΩ
g
FS
13 S
V
SD
0.76 1 V
I
S
3 A
C
iss
390 pF
C
oss
30 pF
C
rss
3 pF
R
g
7Ω
Q
g
(10V) 5.8 10 nC
Q
g
(4.5V) 2.8 5 nC
Q
gs
1.1 nC
Q
gd
1.2 nC
t
D(on)
6 ns
t
2.5
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=4A
Gate-Body leakage current
Reverse Transfer Capacitance V
GS
=0V, V
DS
=50V, f=1MHz
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Forward Transconductance I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=4A
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=3A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
SWITCHING PARAMETERS
Turn-On DelayTime
V
GS
=10V, V
DS
=50V, I
D
=4A
Turn-On Rise Time
V
=10V, V
=50V, R
=12.5
Ω
,
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Total Gate Charge
t
r
2.5
t
D(off)
18 ns
t
f
2.5 ns
t
rr
15 ns
Q
rr
53 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=4A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=4A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=12.5
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Nov. 2012 www.aosmd.com Page 2 of 5
AO4286
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
50
60
70
80
90
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=3A
VGS=10V
ID=4A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
5
10
15
20
25
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=3V
3.5V
10V
4.5V
6V
4V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
20
40
60
80
100
120
140
160
180
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=4A
25°C
125°C
Rev 0: Nov. 2012 www.aosmd.com Page 3 of 5
AO4286
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 2 4 6
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Coss
C
rss
VDS=50V
ID=4A
TJ(Max)=150°C
TA=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10µs
10ms
1ms
DC
RDS(ON)
TJ(Max)=150°C
T
A
=25°C
100
µ
s
40
Ambient (Note F)
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Operating Area (Note F)
RθJA=85°C/W
Rev 0: Nov. 2012 www.aosmd.com Page 4 of 5
AO4286
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0: Nov. 2012 www.aosmd.com Page 5 of 5