TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 1
July 2008
TIP30/TIP30A/TIP30B/TIP30C
PNP Epitaxial Silicon Transistor
Features
• Complementary to TIP29/TIP29A/TIP29B/TIP29C
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO
Collector-Base Voltage : TIP30
: TIP30A
: TIP30B
: TIP30C
- 40
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage : TIP30
: TIP30A
: TIP30B
: TIP30C
- 40
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (D C) - 1 A
ICP Collector Current (Pu lse ) - 3 A
IB Base Current - 0.4 A
PC Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1. Base 2. Collector 3. Emitter
TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 2
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP30
: TIP30A
: TIP30B
: TIP30C
IC = -30mA, IB = 0
-40
-60
-80
-100
V
V
V
V
ICEO Collector Cut-off Curren t
: TIP30/30A
: TIP30B/30C VCE = -30V, IB = 0
VCE = -60V, IB = 0 -0.3
-0.3 mA
mA
ICES Collector Cut-off Current : TIP30
: TIP30A
: TIP30B
: TIP30C
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-200
-200
-200
-200
μA
μA
μA
μA
IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -1.0 mA
hFE * DC Current Gain VCE = -4V,IC = -0.2A
VCE = -4V, IC = -1A 40
15 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = -1A, IB = -125mA -0.7 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -1A -1.3 V
fT Current Gain Bandwidth Product VCE = -10V, IC = -200mA, f = 1MHz 3.0 MHz
TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-10
-100
-1000
-10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-10 -100
-0.1
-1
-10
DC
TIP30C VCEO MAX.
TIP30B VCEO MAX.
TIP30A VCEO MAX.
TIP30 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 4
Mechanical Dimensions
TO220
TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon TransistorTIP30/TIP30A/TIP30B/TIP30C
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 5
