TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor Features * Complementary to TIP29/TIP29A/TIP29B/TIP29C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP30 : TIP30A : TIP30B : TIP30C - 40 - 60 - 80 - 100 V V V V VCEO Collector-Emitter Voltage : TIP30 : TIP30A : TIP30B : TIP30C - 40 - 60 - 80 - 100 V V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -1 A ICP Collector Current (Pulse) -3 A IB Base Current - 0.4 A PC Collector Dissipation (TC=25C) 30 W Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C (c) 2008 Fairchild Semiconductor Corporation TIP30/TIP30A/TIP30B/TIP30C Rev. A www.fairchildsemi.com 1 TIP30/TIP30A/TIP30B/TIP30C -- PNP Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : TIP30 : TIP30A : TIP30B : TIP30C Collector Cut-off Current : TIP30/30A : TIP30B/30C Test Condition IC = -30mA, IB = 0 Min. Max. -40 -60 -80 -100 Units V V V V VCE = -30V, IB = 0 VCE = -60V, IB = 0 -0.3 -0.3 mA mA VCE = -40V, VEB = 0 VCE = -60V, VEB = 0 VCE = -80V, VEB = 0 VCE = -100V, VEB = 0 -200 -200 -200 -200 A A A A -1.0 mA Collector Cut-off Current : TIP30 : TIP30A : TIP30B : TIP30C IEBO Emitter Cut-off Current VEB = -5V, IC = 0 hFE * DC Current Gain VCE = -4V,IC = -0.2A VCE = -4V, IC = -1A 40 15 75 VCE(sat) * Collector-Emitter Saturation Voltage IC = -1A, IB = -125mA -0.7 V VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -1A -1.3 V fT Current Gain Bandwidth Product VCE = -10V, IC = -200mA, f = 1MHz 3.0 MHz * Pulse Test: PW300ms, Duty Cycle2% (c) 2008 Fairchild Semiconductor Corporation TIP30/TIP30A/TIP30B/TIP30C Rev. A www.fairchildsemi.com 2 TIP30/TIP30A/TIP30B/TIP30C -- PNP Epitaxial Silicon Transistor Electrical Characteristics TC=25C unless otherwise noted VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 -1 -10 -100 -1000 -10000 IC/IB = 10 VBE(sat) -1000 -100 VCE(sat) -10 -1 -10000 -10 IC[mA], COLLECTOR CURRENT -100 -1000 -10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 40 PC[W], POWER DISSIPATION -1 DC s 5m IC(MAX) (DC) s 1m IC[A], COLLECTOR CURRENT 35 IC(MAX) (PULSE) TIP30 VCEO MAX. TIP30A VCEO MAX. TIP30B VCEO MAX. TIP30C VCEO MAX. -0.1 30 25 20 15 10 5 0 -10 -100 0 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area (c) 2008 Fairchild Semiconductor Corporation TIP30/TIP30A/TIP30B/TIP30C Rev. A 25 Figure 4. Power Derating www.fairchildsemi.com 3 TIP30/TIP30A/TIP30B/TIP30C -- PNP Epitaxial Silicon Transistor Typical Characteristics TIP30/TIP30A/TIP30B/TIP30C -- PNP Epitaxial Silicon Transistor Mechanical Dimensions TO220 (c) 2008 Fairchild Semiconductor Corporation TIP30/TIP30A/TIP30B/TIP30C Rev. A www.fairchildsemi.com 4 TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor (c) 2008 Fairchild Semiconductor Corporation TIP30/TIP30A/TIP30B/TIP30C Rev. A www.fairchildsemi.com 5