SiT2024B Automotive AEC-Q100 SOT23 Oscillator Features Applications AEC-Q100 with extended temperature range (-55C to 125C) Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places Supply voltage of 1.8V or 2.25V to 3.63V Excellent total frequency stability as low as 20 ppm Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 3.8 mA typical at 1.8V LVCMOS/LVTTL compatible output 5-pin SOT23-5 package: 2.9 x 2.8 mm x mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Automotive, extreme temperature and other high-rel electronics Infotainment systems, collision detection devices, and invehicle networking Powertrain control Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25C and nominal supply voltage. Table 1. Electrical Characteristics Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 - 110 MHz Refer to Table 13 and Table 14 for a list supported frequencies Frequency Stability and Aging Frequency Stability F_stab -20 -25 -30 -50 Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage and load (15 pF 10%). -40 - +20 ppm - +25 ppm - +30 ppm - +50 ppm Operating Temperature Range - +85 C Operating Temperature Range (ambient) T_use -40 - +105 C Extended Industrial, AEC-Q100 Grade 2 -40 - +125 C Automotive, AEC-Q100 Grade 1 -55 Supply Voltage Current Consumption Vdd Idd Duty Cycle Rise/Fall Time - +125 C Extended Temperature, AEC-Q100 Supply Voltage and Current Consumption 1.62 1.8 1.98 V 2.25 - 3.63 V - 4.0 4.8 mA - Industrial, AEC-Q100 Grade 3 All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V are supported. No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V No load condition, f = 20 MHz, Vdd = 1.8V 3.8 4.5 mA LVCMOS Output Characteristics - 55 % All Vdds DC 45 Tr, Tf - 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% - 1.3 2.5 ns Vdd = 1.8V, 20% - 80% Output High Voltage VOH 90% - - Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL - - 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% - Input Low Voltage VIL - - 30% Vdd Pin 1, OE Input Pull-up Impedence Z_in - 100 - k Pin 1, OE logic high or logic low - 10 ms Measured from the time Vdd reaches its rated minimum value ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles ps f = 75 MHz, 2.25V to 3.63V Input Characteristics - Vdd Pin 1, OE Startup and Resume Timing T_start - Enable/Disable Time T_oe - - RMS Period Jitter T_jitt - 1.6 130 Jitter 2.5 - 1.9 3.0 ps f = 75 MHz, 1.8V - 0.5 - ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz - 1.3 - ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Startup Time RMS Phase Jitter (random) Rev 1.6 T_phj December 14, 2016 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Table 2. Pin Description Top View Symbol Functionality 1 GND Power 2 NC No Connect Electrical ground No connect GND 1 NC 2 OE/NC 3 [1] H : specified frequency output L: output is high impedance. Only output driver is disabled. Output Enable 3 OE/NC 4 VDD Power Power supply voltage[2] 5 OUT Output Oscillator output No Connect YXXXX Pin 5 OUT 4 VDD Any voltage between 0 and Vdd or Open[1]: Specified frequency output. Pin 3 has no function. Figure 1. Pin Assignments Notes: 1. In OE or ST mode, a pull-up resistor of 10 k or less is recommended if pin 3 is not externally driven. If pin 3 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 F or higher between Vdd and GND is required. Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C Vdd -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C - 150 C [3] Junction Temperature Note: 3. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[4] Package JA, 4 Layer Board JC, Bottom (C/W) (C/W) SOT23-5 421 175 Note: 4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[5] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 85C 95C 105C 115C 125C 135C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev. 1.6 Page 2 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Test Circuit and Waveform[6] Test Point Vout Vdd 5 4 tr tf 80% Vdd 15 pF (including probe and fixture capacitance) 1 2 3 50% Power Supply 0.1F 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1k OE/ST Function Figure 3. Waveform Figure 2. Test Circuit Note: 6. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd [7] T_start Pin 4 Voltage T_oe No Glitch during start up OE Voltage CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_oe: Time to re-enable the clock output Figure 4. Startup Timing (OE Mode) Figure 5. OE Enable Timing (OE Mode Only) Vdd OE Voltage 50% Vdd T_oe CLK Output HZ T_oe: Time to put the output in High Z mode Figure 6. OE Disable Timing (OE Mode Only) Note: 7. SiT2024 has "no runt" pulses and "no glitch" output during startup or resume. Rev. 1.6 Page 3 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Performance Plots[8] 1.8 V 2.5 V 2.8 V 3V 3.3 V 6.0 DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7 DUT8 DUT9 DUT10 DUT11 DUT12 DUT13 DUT14 DUT15 DUT16 DUT17 DUT18 DUT19 DUT20 25 5.5 20 15 Frequency (ppm) Idd (mA) 5.0 4.5 4.0 3.5 10 5 0 -5 -10 -15 -20 3.0 0 20 40 60 80 100 -25 -55 Frequency (MHz) 2.8 V 3.0 V 5 25 45 65 85 105 125 Figure 8. Frequency vs Temperature 3.3 V 1.8 V 4.0 55 3.5 54 2.5 V 2.8 V 3.0 V 3.3 V 53 3.0 52 Duty cycle (%) RMS period jitter (ps) 2.5 V -15 Temperature (C) Figure 7. Idd vs Frequency 1.8 V -35 2.5 2.0 1.5 1.0 51 50 49 48 47 0.5 46 0.0 0 20 40 60 80 45 100 0 20 40 Figure 9. RMS Period Jitter vs Frequency 1.8 V 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 100 2.5 V 2.8 V 3.0 V 3.3 V 2.5 2.0 Fall time (ns) 2.0 Rise time (ns) 80 Figure 10. Duty Cycle vs Frequency 2.5 1.5 1.0 1.5 1.0 0.5 0.5 0.0 0.0 -40 -20 0 20 40 60 80 100 -40 120 -20 0 20 40 60 80 100 120 Temperature (C) Temperature (C) Figure 11. 20%-80% Rise Time vs Temperature Rev. 1.6 60 Frequency (MHz) Frequency (MHz) Figure 12. 20%-80% Fall Time vs Temperature Page 4 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Performance Plots[8] 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 3.0 V 2.8 V 3.3 V 1.0 2.0 1.9 0.9 1.8 0.8 1.6 IPJ (ps) IPJ (ps) 1.7 1.5 1.4 1.3 0.7 0.6 0.5 1.2 0.4 1.1 1.0 10 20 30 40 50 60 70 80 90 100 0.3 110 10 Frequency (MHz) 20 30 40 50 60 70 80 90 100 110 Frequency (MHz) Figure 13. RMS Integrated Phase Jitter Random [9] (12 kHz to 20 MHz) vs Frequency Figure 14. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[9] Notes: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz. Rev. 1.6 Page 5 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Programmable Drive Strength The SiT2024 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The SiT2024 can support up to 60 pF in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. SiT2024 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. Improves the downstream clock receiver's (RX) jitter by decreasing (speeding up) the clock rise/fall time. 1. Select the table that matches the SiT2024 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. EMI Reduction by Slowing Rise/Fall Time Figure 15 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature can be calculated as: Max Frequency = 1 5 x Trf_20/80 where Trf_20/80 is the typical value for 20%-80% rise/fall time. Example 1 Calculate fMAX for the following condition: Figure 15. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. Vdd = 3.3V (Table 7) Capacitive Load: 30 pF Desired Tr/f time = 1.31 ns (rise/fall time part number code = F) Part number for the above example: SiT2024BAES2-18E-66.666660 Drive strength code is inserted here. Default setting is "-" High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT2024 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT2024. Rev. 1.6 Page 6 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U F or "": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "": default U F 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T 3.77 1.94 1.29 0.97 0.55 7.54 3.90 2.57 2.00 1.12 12.28 7.03 4.72 3.54 2.08 19.57 10.24 7.01 5.43 3.22 25.27 13.34 9.06 6.93 4.08 E or "": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 L A R B T or "": default E U F 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Drive Strength \ CLOAD Rise/Fall Time Typ (ns) Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 3.39 6.88 11.63 17.56 23.59 A 1.74 3.50 6.38 8.98 12.19 R 1.16 2.33 4.29 6.04 8.34 B 0.81 1.82 3.22 4.52 6.33 T or "": default 0.46 1.00 1.86 2.60 3.84 E 0.33 0.87 1.64 2.30 3.35 U 0.28 0.79 1.46 2.05 2.93 F 0.25 0.72 1.31 1.83 2.61 Rev. 1.6 Page 7 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Pin 3 Configuration Options (OE or NC) Pin 3 of the SiT2024 can be factory-programmed to support three modes: Output Enable (OE) or No Connect (NC). In addition, the SiT2024 supports "no runt" pulses and "no glitch" output during startup or when the output driver is re-enabled from the OE disable mode as shown in the waveform captures in Figure 16 and Figure 17. Output Enable (OE) Mode In the OE mode, applying logic low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1s. No Connect (NC) Mode In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 3. Figure 16. Startup Waveform vs. Vdd Table 12 below summarizes the key relevant parameters in the operation of the device in OE or NC mode. Table 12. OE vs. NC OE NC Active current 20 MHz (max, 1.8V) 4.5 mA 4.5 mA OE disable current (max. 1.8V) 3.8 mA N/A OE enable time at 110 MHz (max) 130 ns N/A Output driver in OE disable High Z N/A Output on Startup and Resume The SiT2024 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup. Rev. 1.6 Page 8 of 15 Figure 17. Startup Waveform vs. Vdd (Zoomed-in View of Figure 16) www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Dimensions and Patterns Package Size - Dimensions (Unit: mm)[10] Recommended Land Pattern (Unit: mm)[11] 2.90 x 2.80 mm SOT23-5 Notes: 10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 11. A capacitor value of 0.1 F between Vdd and GND is required Table 13. Dimension Table Symbol Min. Nom. A 0.90 1.27 1.45 A1 0.00 0.07 0.15 A2 0.90 1.20 1.30 b 0.30 0.35 0.50 c 0.14 0.15 0.20 D 2.75 2.90 3.05 E 2.60 2.80 3.00 E1 1.45 1.60 1.75 L 0.30 0.38 0.55 L1 0.25 REF e 0.95 BSC. e1 1.90 BSC. Rev. 1.6 Max. 0 - 8 Page 9 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT2024BM -S2-18E - 2 5 .000625D Packing Method Part Family "SiT2024" "D": 8 mm Tape & Reel, 3ku reel "E": 8 mm Tape & Reel, 1ku reel Blank for Bulk Revision Letter "B" is the revision Frequency Refer to the Supported Frequencies Tables below Temperature Range "I" Industrial -40C to 85C "E" Extended Industrial -40C to 105C "A" Automotive -40C to 125C "M" -55C to 125C Feature Pin "E" for Output Enable "N" for No Connect Supply Voltage[12] Output Drive Strength "18" for 1.8V 10% "25" for 2.5V 10% "28" for 2.8V 10% "30" for 3.0V 10% "33" for 3.3V 10% "XX" for 2.5V -10% to 3.3V +10% "-" Default (datasheet limits) See Tables 7 to 11 for rise/fall times "L" "A" "R" "B" "T" "E" "U" "F" Frequency Stability "1" for 20 ppm "2" for 25 ppm "8" for 30 ppm "3" for 50 ppm Package Size "S" SOT23-5 (2.9 x 2.8 mm) Note: 12. The voltage portion of the SiT2024 part number consists of two characters that denote the specific supply voltage of the device. The SiT2024 supports either 1.8V 10% or any voltage between 2.25V and 3.62V. In the 1.8V mode, one can simply insert 18 in the part number. In the 2.5V to 3.3V mode, two digits such as 18, 25 or 33 can be used in the part number to reflect the desired voltage. Alternatively, "XX" can be used to indicate the entire operating voltage range from 2.25V to 3.63V. Table 14. Supported Frequencies (-40C to +85C)[13] Frequency Range Min. Max. 1.000000 MHz 110.000000 MHz Table 15. Supported Frequencies (-40C to +105C or -40C to +125C)[13, 14] Table 16. Supported Frequencies (-55C to +125C)[13, 14] Frequency Range Frequency Range Min. Max. Min. Max. 1.000000 MHz 61.222999 MHz 1.000000 MHz 61.222999 MHz 61.974001 MHz 69.795999 MHz 61.974001 MHz 69.239999 MHz 70.485001 MHz 79.062999 MHz 70.827001 MHz 78.714999 MHz 79.162001 MHz 81.427999 MHz 79.561001 MHz 80.159999 MHz 82.232001 MHz 91.833999 MHz 80.174001 MHz 80.779999 MHz 92.155001 MHz 94.248999 MHz 82.632001 MHz 91.833999 MHz 94.430001 MHz 94.874999 MHz 95.474001 MHz 96.191999 MHz 94.994001 MHz 97.713999 MHz 96.209001 MHz 96.935999 MHz 98.679001 MHz 110.000000 MHz 99.158001 MHz 110.000000 MHz Notes: 13. Any frequency within the min and max values in the above table are supported with 6 decimal places of accuracy. 14. Please contact SiTime for frequencies that are not listed in the tables above. Rev. 1.6 Page 10 of 15 www.sitime.com SiT2024B Automotive AEC-Q100 SOT23 Oscillator Table 17. Additional Information Document Description Download Link Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer Field Programmable Oscillators Devices that can be programmable in the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/243-manufacturing-notes-forsitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes Table 18. Revision History Revision Release Date 0.1 05/19/2015 Final production release Change Summary 1.4 03/18/2016 Added support for 20 ppm frequency stability Revised the dimension table Added the industrial temperature "-40C to 85C" option Revised the supported frequency tables 1.6 12/14/2016 Changed Clock Generator to SOT23 Oscillator Updated logo and company address, other page layout changes SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 (c) SiTime Corporation 2016-2017. The information contained herein is subject to change at any time without notice. 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Rev. 1.6 Page 11 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. Rev. 1.6 Page 12 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Silicon MEMS Outperforms Quartz Best Electro Magnetic Susceptibility (EMS) Best Reliability SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. Why is EpiSeal MEMS Best in Class: Why is EpiSealTM MEMS Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability World-class MEMS and CMOS design expertise Reliability (Million Hours) EpiSeal MEMS 1,140 IDT Internal differential architecture for best common mode noise rejection Electrostatically driven MEMS resonator is more immune to EMS TXC Vibration Sensitivity (ppb/g) EPS CW KYCA SLAB EpiSeal MEMS 100.0 10.0 1.0 0.1 0.0 10 38 100 1000 Vibration Frequency (Hz) Figure 3. Electro Magnetic Susceptibility (EMS)[3] EPSN Best Power Supply Noise Rejection 28 Figure 1. Reliability Comparison SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. [1] Why is EpiSeal MEMS Best in Class: Best Aging Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. On-chip regulators and internal differential architecture for common mode noise rejection MEMS resonator is paired with advanced analog CMOS IC Why is EpiSeal MEMS Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability Inherently better immunity of electrostatically driven MEMS resonator MEMS vs. Quartz Aging EpiSeal MEMS Oscillator Quartz Oscillator 10 8 Aging ( PPM) 8 Figure 4. Power Supply Noise Rejection[4] 6 4 2 3 3.5 1.5 0 1-Year 10-Year Figure 2. Aging Comparison[2] Rev. 1.6 Page 13 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is EpiSeal MEMS Best in Class: Why is EpiSeal MEMS Best in Class: The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design Center-anchored MEMS resonator is the most robust design Figure 5. Vibration Robustness [5] [6] Figure 6. Shock Robustness Figure labels: Rev. 1.6 TXC = TXC Epson = EPSN Connor Winfield = CW Kyocera = KYCA SiLabs = SLAB SiTime = EpiSeal MEMS Page 14 of 15 www.sitime.com Silicon MEMS Outperforms Quartz Notes: 1. Data source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): According to IEC EN61000-4.3 (Electromagnetic compatibility standard) Field strength: 3V/m Radiated signal modulation: AM 1 kHz at 80% depth Carrier frequency scan: 80 MHz - 1 GHz in 1% steps Antenna polarization: Vertical DUT position: Center aligned to antenna Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone CW Conner Winfield P123-156.25M Quartz, 3rd Overtone KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL NDK NDK NZ2523SB-25.6M Quartz KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz EPSN Epson SG-310SCF-25M0-MB3 Quartz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: MIL-STD-883F Method 2002 Condition A: half sine wave shock pulse, 500-g, 1ms Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3. 7. Additional data, including setup and detailed results, is available upon request to qualified customer. Rev. 1.6 Page 15 of 15 www.sitime.com