SiT2024B
Automotive AEC
-Q100 SOT23 Oscillator
Features
AEC-Q100 with extended temperature range (-55°C to 125°C)
Frequencies between 1 MHz and 110 MHz accurate to
6 decimal places
Supply voltage of 1.8V or 2.25V to 3.63V
Excellent total frequency stability as low as ±20 ppm
Industry best G-sensitivity of 0.1 PPB/G
Low power consumption of 3.8 mA typical at 1.8V
LVCMOS/LVTTL compatible output
5-pin SOT23-5 package: 2.9 x 2.8 mm x m m
RoHS and REACH compliant, Pb-f ree, Halogen-free and
Antimony-free
Applications
Automotive, extreme temperat ur e and ot her hig h-rel
electronics
Infotainment systems, collision detection devi ces, and in-
vehicle networking
Powertrain control
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nomin al supply voltage.
Table 1. Electrical Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Unit
Frequency Range
Output Frequency Range
f
1
–
110
MHz
Frequenc y Stabili ty and Aging
Frequency Stability
F_stab
-20
–
+20
ppm
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
-25
–
+25
ppm
-30
–
+30
ppm
-50
–
+50
ppm
Operating Tempera t ure Range
Operating Tempera t ure
Range (ambient) T_use
-40
–
+85
°C
-40
–
+105
°C
-40 – +125 °C Automotive, AEC-Q100 Grade 1
-55
–
+125
°C
Supply Voltage and Current Consumption
Supply Voltage Vdd
1.62
1.8
1.98
V
All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V
and 3.3V are supported.
2.25
–
3.63
V
Current Consumption
Idd
–
4.0
4.8
mA
–
3.8
4.5
mA
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
Rise/Fall Time Tr, Tf
–
1.5
3
ns
– 1.3 2.5 ns Vdd = 1.8V, 20% - 80%
Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2. 8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage
VIH
70%
–
–
Vdd
Input Low Voltage
VIL – – 30% Vdd Pin 1, OE
Input Pull-up Impedence
Z_in – 100 – kΩ Pin 1, OE logic high or logic low
Startup and Resume Timing
Startup Time T_start – – 10 ms Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time
T_oe
–
–
130
ns
Jitter
RMS Period Jitter T_jitt – 1.6 2.5 ps f = 75 MHz, 2.25V to 3.63V
– 1.9 3.0 ps f = 75 MHz, 1.8V
RMS Phase Jitter (random) T_phj – 0.5 – ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
– 1.3 – ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Rev 1.6 December 14, 2016 www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Rev. 1.6
Page 2 of 15
www.sitime.com
Table 2. Pin Description
Top View
Pin
Symbol
Functionality
1
GND
Power
Electrical ground
2
NC
No Connect
No connect
3 OE/NC
Output
Enable
H[1]: specified frequency output
L: output is high impedance. Only out put driver is disabled.
No Connect Any voltage between 0 and Vdd or Open
[1]
: Speci fied
frequency output. Pin 3 has no function.
4
VDD
Power
Power supply voltage[2]
5
OUT
Output
Oscillator output
GND 1
NC 2
OE/NC 3VDD
4
OUT
5
YXXXX
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 3 is not ext ern ally driven. If pin 3 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
Max.
Unit
Storage Temperature -65 150 °C
Vdd -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature (follow standard Pb free
soldering guidelines)
– 260 °C
Junction Temperature
[3]
– 150 °C
Note:
3. Exceeding this temperature for extended period of time may damage the devic e.
Table 4. Thermal Consideration[4]
Package
θJA, 4 Layer Board
(°C/W)
θJC, Bottom
(°C/W)
SOT23-5
421
175
Note:
4. Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table.
Table 5. Maximum Operating Junction Temperature[5]
Max Operating Temperature (ambient) Maximum Operating Junction Temperature
85°C 95°C
105°C 115°C
125°C 135°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Rev. 1.6
Page 3 of 15
www.sitime.com
Test Circuit and Waveform[6]
5
1
4
30.1µF
Power
Supply
OE/ST Function
Test
Point
15 pF
(including probe
and fixture
capacitance)
Vdd
2
Vout
Vdd
1k
Figure 2. Test Circuit
80% Vdd
High Pulse
(TH)
50%
20% Vdd
Period
tftr
Low Pulse
(TL)
Figure 3. Waveform
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagrams
90% Vdd Vdd
Pin 4 Voltage
CLK Output
T_start
T_start: Time to start from power-off
No Glitch
during start up
[7]
HZ
Figure 4. Startup Timing (OE Mode)
50% Vdd
Vdd
OE Voltage
CLK Output
T_oe
T_oe: Time to re-enable the clock output
HZ
Figure 5. OE Enable Timing (OE Mode Only)
50% Vdd
Vdd
OE Voltage
CLK Output
T_oe: Time to put the output in High Z mode
HZ
T_oe
Figure 6. OE Disable Timing (OE Mode Only)
Note:
7. SiT2024 has “no runt” pulses and “no glitch” output during startup or resume.
Rev. 1.6
Page 4 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Performance Plots[8]
3.0
3.5
4.0
4.5
5.0
5.5
6.0
020 40 60 80 100
1.8 V 2.5 V 2.8 V 3 V 3.3 V
Idd (mA)
Frequency (MHz)
Figure 7. Idd vs Frequency
-25
-20
-15
-10
-5
0
5
10
15
20
25
-55 -35 -15 525 45 65 85 105 125
DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7
DUT8 DUT9 DUT10 DUT11 DUT12 DUT13 DUT14
DUT15 DUT16 DUT17 DUT18 DUT19 DUT20
Frequency (ppm)
Temperature (°C)
Figure 8. Frequ e ncy vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
020 40 60 80 100
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
RMS period jitter (ps)
Frequency (MHz)
Figure 9. RMS Period Jitter vs Frequency
45
46
47
48
49
50
51
52
53
54
55
020 40 60 80 100
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Duty cycle (%)
Frequency (MHz)
Figure 10. Duty Cycle vs Frequency
0.0
0.5
1.0
1.5
2.0
2.5
-40 -20 020 40 60 80 100 120
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Rise time (ns)
Temperature (°C)
Figure 11. 20%-80 % R ise Time vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-40 -20 020 40 60 80 100 120
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Fall time (ns)
Temperature (°C)
Figure 12. 20%-80 % Fall Time vs Temperature
Rev. 1.6
Page 5 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Performance Plots[8]
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
10 20 30 40 50 60 70 80 90 100 110
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
IPJ (ps)
Frequency (MHz)
Figure 13. RMS Integrated Ph ase Jitter Random
(12 kHz to 20 MHz) vs Frequenc y[9]
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10 20 30 40 50 60 70 80 90 100 110
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
IPJ (ps)
Frequency (MHz)
Figure 14. RMS Integrated Ph ase Jitter Random
(900 kHz to 20 MHz) vs Frequenc y[9]
Notes:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.
Rev. 1.6
Page 6 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Programmable Drive Strengt h
The SiT2024 includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the
clock rise/fall time for specific applications. Benefits from
the programmable drive strength feature are:
Improves system radiated electromagnetic inter-
ference (EMI) by slowing down the clock rise/fall
time.
Improves the downstream clock receiver’s (RX) jitter
by decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while main-
taining full swing with sharp edge rates.
EMI Reduction by Slowing Rise/Fall Time
Figure 15 shows the harmonic power reduction as the
rise/fall times are increased (slowed down). The rise/fall
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a s quare wave. For
the ratio of 0.45, the rise/fall times are very close to near-
triangular waveform. These results, for example, show that
the 11th clock harmonic can be reduced by 35 dB if the
rise/fall edge is increased from 5% of the period to 45% of
the period.
Figure 15. Har monic EMI reduction as a Function
of Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the down-
stream chips et. One way to reduc e this jitter is to speed up
the rise/fall t ime of the input cloc k. Some chipsets may also
require faster ris e/f all t ime in o rder to r educe t heir sens it ivity
to this type of jitter. Refer to the Rise/Fall Time Tables
(Table 7 to Table 11) to determine the proper drive
strength.
High Output Load Capability
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strengt h, the rise/fal l time becomes sl ower as the out-
put load increases. As an example, for a 3.3V SiT2024 de-
vice with default drive strength setting, the typical rise/fall
time is 1 ns for 15 pF output load. The typical rise/fall time
slows down to 2.6 ns when the output load increases to 45
pF. One can choose t o speed up th e rise/f all time t o 1.83 ns
by then increasing the drive strength setting on the SiT2024.
The SiT2024 can sup port up to 60 pF in m aximum capac i-
tive loads with drive strength settings. Refer to the
Rise/Tall Time Tables (Table 7 to 11) to determine the
proper drive s trength for the desired combination of output
load vs. rise/fall time.
SiT2024 Drive Strength Selection
Tables 7 through 11 define the rise/fall time for a given
capacitive load and supply voltage.
1.
Select the table that matches the SiT2024 nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2.
Select the capacitive load column that matches
the applicati on r equirement (5 pF to 60 pF)
3.
Under the capacitive load c olumn, select the desired
rise/fall times.
4.
The left-most column represents the part number
code for the corresponding drive strength.
5.
Add the drive strength code to the part number
for ordering purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 7
through 11, the maximum frequency the oscillator can
operate with guaranteed full swing of the output voltage
over temperat ure can be calcu lated as:
=1
5 x Trf_20/80
Max Frequency
where Trf_20/80 is the typical value for 20%-80% rise/fall
time.
Example 1
Calculate fMAX for the following condition:
Vdd = 3.3V (Table 7)
Capacitive L oad: 30 pF
Desired Tr/f time = 1.31 ns (rise/fall time part
number code = F)
Part number for the above example:
SiT2024BAES2-18E-66.666660
Drive strength code is inserted here. Default setting is “-”
Rev. 1.6
Page 7 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 7. Vdd = 1.8V Rise/Fall Times
for Specific CLOAD
Table 8. Vdd = 2.5V Rise/Fall Times
for Specific CLOAD
Table 9. Vdd = 2.8V Rise/Fall Times
for Specific CLOAD
Table 1 0. Vdd = 3.0V Ri se/ Fall Ti mes
for Specific CLOAD
Table 1 1. Vdd = 3.3V Ri se/ Fall Ti mes
for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L 3.39 6.88 11.63 17.56 23.59
A 1.74 3.50 6.38 8.98 12.19
R 1.16 2.33 4.29 6.04 8.34
B 0.81 1.82 3.22 4.52 6.33
T or "‐": default 0.46 1.00 1.86 2.60 3.84
E 0.33 0.87 1.64 2.30 3.35
U 0.28 0.79 1.46 2.05 2.93
F 0.25 0.72 1.31 1.83 2.61
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L
3.60
7.21
11.97
18.74
24.30
A
1.84
3.71
6.72
9.86
12.68
R
1.22
2.46
4.54
6.76
8.62
B
0.89
1.92
3.39
5.20
6.64
T or "‐": default
0.51 1.00 1.97 3.07 3.90
E
0.38
0.92
1.72
2.71
3.51
U
0.30
0.83
1.55
2.40
3.13
F
0.27
0.76
1.39
2.16
2.85
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L
3.77
7.54
12.28
19.57
25.27
A
1.94
3.90
7.03
10.24
13.34
R
1.29
2.57
4.72
7.01
9.06
B
0.97
2.00
3.54
5.43
6.93
T
0.55
1.12
2.08
3.22
4.08
E or "‐": default
0.44
1.00
1.83
2.82
3.67
U
0.34
0.88
1.64
2.52
3.30
F
0.29
0.81
1.48
2.29
2.99
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L
4.13
8.25
12.82
21.45
27.79
A 2.11 4.27 7.64 11.20 14.49
R
1.45
2.81
5.16
7.65
9.88
B
1.09
2.20
3.88
5.86
7.57
T
0.62
1.28
2.27
3.51
4.45
E or "‐": default
0.54
1.00
2.01
3.10
4.01
U
0.43
0.96
1.81
2.79
3.65
F
0.34
0.88
1.64
2.54
3.32
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L
6.16
11.61
22.00
31.27
39.91
A
3.19
6.35
11.00
16.01
21.52
R
2.11
4.31
7.65
10.77
14.47
B
1.65
3.23
5.79
8.18
11.08
T
0.93
1.91
3.32
4.66
6.48
E
0.78
1.66
2.94
4.09
5.74
U
0.70
1.48
2.64
3.68
5.09
F or "‐": default
0.65
1.30
2.40
3.35
4.56
Rev. 1.6
Page 8 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Pin 3 Configuration Options (OE or NC)
Pin 3 of the SiT2024 can be factory-programmed to sup-
port three modes: Output Enable (OE) or No Connect
(NC).
Output Enable (OE) Mode
In the OE mode, applying logic low to the OE pin only
disables the output driver and puts it in Hi-Z mode. The
core of the device continues to operate normally. Power
consumption is reduc ed due to t he inactiv ity of the output .
When the OE pin is pulled High, the output is typically
enabled in <1µs.
No Connect (NC) Mode
In the NC mo de, the device a lways operates in its normal
mode and outputs the specified frequency regardless of
the logic lev el on pin 3.
Table 12 below summarizes the key relevant parameters
in the operati on of the device in O E or NC mode.
Table 12. OE vs. NC
OE
NC
Active current 20 MHz (max, 1.8V)
4.5 mA
4.5 mA
OE disable current (max. 1.8V)
3.8 mA
N/A
OE enable time at 110 MHz (max)
130 ns
N/A
Output driver in OE disable
High Z
N/A
Output on Startup and Resume
The SiT2024 comes with gated output. Its clock output is
accurate to the rated frequency stability within the first
pulse from init ial device startup.
In addition, the SiT2024 supports “no runt” pulses and
“no glitch” o utput during st artu p or when the out put dr iver
is re-enabled f rom the OE disabl e mode as shown in th e
waveform captures in Figure 16 and Figure 17.
Figure 16. Startup Waveform vs. Vdd
Figure 17. Startup Waveform vs. Vdd
(Zoomed-in View of Figure 16)
Rev. 1.6
Page 9 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)
[10]
Recommended Land Pat t e rn (Unit: mm)
[11]
2.90 x 2.80 mm SOT23-5
Notes:
10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
11. A capacitor value of 0.1 µF between Vdd and GND is required
Table 13. Dimension Table
Symbol Min. Nom. Max.
A 0.90 1.27 1.45
A1 0.00 0.07 0.15
A2 0.90 1.20 1.30
b 0.30 0.35 0.50
c 0.14 0.15 0.20
D 2.75 2.90 3.05
E 2.60 2.80 3.00
E1 1.45 1.60 1.75
L 0.30 0.38 0.55
L1 0.25 REF
e 0.95 BSC.
e1 1.90 BSC.
α 0° – 8°
Rev. 1.6
Page 10 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime
Part Number Generator.
Frequency
Refer to the Supported
Frequencies Tables below
Part Family
“SiT2024”
Revision Letter
“B” is the revision
Temperature Range
Supply Voltage
[12]
“18” for 1.8V ±10%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“33” for 3.3V ±10%
Feature Pin
“E” for Output Enable
Frequency Stability
“1” for ±20 ppm
“2” for ±25 ppm
“8” for ±30 ppm
“3” for ±50 ppm
Package Size
SiT2024BM -S2-18E -25.000625D
“30” for 3.0V ±10%
Packing Method
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
“M” -55ºC to 125ºC
“XX” for 2.5V -10% to 3.3V +10%
Output Drive Strength
“–” Default (datasheet limits)
See Tables 7 to 11 for rise/fall times
“N” for No Connect
“S” SOT23-5 (2.9 x 2.8 mm)
“L”
“A”
“R”
“B”
“T”
“E”
“U”
“F”
“E” Extended Industrial -40ºC to 105ºC
“A” Automotive -40ºC to 125ºC
“I” Industrial -40ºC to 85ºC
Note:
12. The voltage portion of the SiT2024 part number consists of two characters that denote the specific supply voltage of the device. The SiT2024 s upports either
1.8V ±10% or any voltage between 2.25V and 3.62V. In the 1.8V mode, one can simply insert 18 in the part number. In the 2.5V to 3.3V mode, two digits such
as 18, 25 or 33 can be used in the part number to reflect the desired voltage. Alternatively, “XX” can be used to indicate the entire operating voltage range from
2.25V to 3.63V.
Table 14. Supported Frequencies
(-40°C to +85°C)[13]
Frequency Range
Min. Max.
1.000000 MHz 110.000000 MHz
Table 15. Supported Frequencies
(-40°C to +105°C or -40°C to +125°C)[13, 14]
Frequency Range
Min. Max.
1.000000 MHz 61.222999 MHz
61.974001 MHz 69.795999 MHz
70.485001 MHz 79.062999 MHz
79.162001 MHz 81.427999 MHz
82.232001 MHz 91.833999 MHz
92.155001 MHz 94.248999 MHz
94.430001 MHz 94.874999 MHz
94.994001 MHz 97.713999 MHz
98.679001 MHz 110.000000 MHz
Table 16. Supported Frequencies
(-55°C to +125°C)[13, 14]
Frequency Range
Min. Max.
1.000000 MHz 61.222999 MHz
61.974001 MHz 69.239999 MHz
70.827001 MHz 78.714999 MHz
79.561001 MHz 80.159999 MHz
80.174001 MHz 80.779999 MHz
82.632001 MHz 91.833999 MHz
95.474001 MHz 96.191999 MHz
96.209001 MHz 96.935999 MHz
99.158001 MHz 110.000000 MHz
Notes:
13. Any frequency within the min and max values in the above table are supported with 6 decimal places of accuracy.
14. Please contact SiTime for frequencies that are not listed in the tables above.
Rev. 1.6
Page 11 of 15
www.sitime.com
SiT2024B Automotive AEC-Q100 SOT23 Oscillator
Table 17. Additional Information
Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators Devices that can be programmable in
the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators
Manufacturi ng Not e s Tape & Reel dimension, reflow
profile and other manufacturing
related info
http://www.sitime.com/component/docman/doc_download/243-manufacturing-notes-for-
sitime-oscillators
Qualificati on Re port s RoHS report, reliability reports,
composition reports http://www.sitime.com/support/quality-and-reliability
Performance Reports Additional performance data such as
phase noise, current consumption and
jitter for selecte d frequencies http://www.sitime.com/support/performance-measurement-report
Termination Tec hnique s Termination design
recommendations http://www.sitime.com/support/application-notes
Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes
Table 1 8. Rev isio n History
Revision
Release Date
Change Summary
0.1
05/19/2015
Final production release
1.4 03/18/2016
Added support for ±20 ppm frequency stability
Revised the dimension table
Added the industrial temperature “-40°C to ±85°C” option
Revised the supported frequency tables
1.6 12/14/2016 Changed Clock Generator to SO T23 Oscillator
Updated logo and company address, ot her page layout changes
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corpora tion 2016-2017. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or
liability for any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime produc
t, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or alte
red during assembly and are not capable of being tested by SiTime under its normal test conditions, or
(iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and al
l express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing
or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold
by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be
involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS
FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does
not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale
of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be
strictly
prohibited.
Rev. 1.6
Page 12 of 15
www.sitime.com
Silicon MEMS Outperforms Quartz
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
Rev. 1.6
Page 13 of 15
www.sitime.com
Silicon MEM S Outperforms Quartz
Silicon MEMS Outperforms Quartz
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which all o ws SiTime to dev elo p the mos t reli able
products. Figure 1 shows a comparison with quartz tech-
nology.
Why is EpiSeal™ MEMS Best in Class:
SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
World-class MEMS and CMOS design expertise
28
38
1,140
EPSN
IDT
EpiSeal
MEMS
Reliability (Million Hours)
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long
term aging performance which is why every new SiTime
product specifies 10-year aging. A comparison is shown
in Figure 2.
Why is EpiSeal MEMS Best in Class:
SiTime’s MEMS resonators are vacuum sealed us-
ing an advanced EpiSeal™ process, which elimi-
nates foreign p articles and impr oves long term aging
and reliabil ity
Inherently better immunity of electrostatically driven
MEMS resonator
1.5
3.5
3
8
0
2
4
6
8
10
1-Year 10-Year
Aging (±PPM)
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillator Quartz Oscillator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune t o extern al elec tr omagneti c fiel ds than quart z
oscillators as shown in Figure 3.
Why is EpiSeal MEMS Best in Class:
Internal differential architecture for best common
mode noise rejection
Electrostatically driven MEMS resonator is more
immune to EMS
0.0
0.1
1.0
10.0
100.0
10 100 1000
Vibration Sensitivity (ppb/g)
Vibration Frequency (Hz)
TXC EPS CW
KYCA
SLAB EpiSeal MEMS
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is s hown in Figure 4.
Why is EpiSeal MEMS Best in Class:
On-chip regulators and internal differential architec-
ture for com mon mode noise rej ec tion
MEMS resonator is paired with advanced analog
CMOS IC
Figure 4. Power Supply Noise Rejection[4]
Rev. 1.6
Page 14 of 15
www.sitime.com
Silicon MEM S Outperforms Quartz
Best Vibration Robustness
High-vibration environm ents are a ll arou nd us. All e lectro n-
ics, from handheld devices to enterprise servers and
storage systems are subject to vibration. Figure 5 shows a
comparison of vibration robustness.
Why is EpiSeal MEMS Best in Class:
The moving mass of SiTime’s MEMS resonators is
up to 3000 tim es smaller than quartz
Center-anchored MEMS resonator i s the most robus t
design
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figur e 6.
Why is EpiSeal MEMS Best in Class:
The moving mass of SiTime’s MEMS resonators is
up to 3000 tim es smaller than quartz
Center-anchored MEMS resonator is the most ro-
bust design
Figure 6. Shock Robustness[6]
Figure labels:
TXC = TXC
Epson = EPSN
Connor Winfield = CW
Kyocera = KYCA
SiLabs = SLAB
SiTime = EpiSeal MEMS
Rev. 1.6
Page 15 of 15
www.sitime.com
Silicon MEM S Outperforms Quartz
Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Su s cepti bility (EMS):
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
Field strength: 3V/m
Radiated signal modulation: AM 1 kHz at 80% depth
Carrier frequency scan: 80 MHz – 1 GHz i n 1% steps
Antenna polarization: Vertical
DUT position: Center aligned to antenna
Devices used in this test:
Label Manufacturer Part Number Technology
EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL
EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW
TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone
CW Conner Winfield P123-156.25M Quartz, 3rd Overtone
KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW
SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
Label Manufacturer Part Number Technology
EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL
NDK NDK NZ2523SB-25.6M Quartz
KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz
EPSN Epson SG-310SCF-25M0-MB3 Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
MIL-STD-883F Method 2002
Condition A: half sine wave shock pulse, 500-g, 1ms
Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and det ai led results, is available upon request to qualified customer.