elt Eo So ee 2e5c Dd = @235b605 OOO4S0b 3 MMSIEG.- Te 9-23 NPN Silicon Planar Transistors BCY 58 BCY 59 295C 04306 D~ ~~ BCY 65 E tne attic BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon planar transistors in TO 18 cases (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for AF input and driver stages as well as for switching applications. SIEMENS AKTIENGESELLSCHAF Type Ordering code BCY 58 Q60203-Y58 BCY 58 VII Q60203-Y58-G BCY 58 VIil Q60203-Y58-H BO BCY 58 Ix 060203-Y58-J 204s + ar BCY 68 X Q60203-Y58-K = =. 3 BCY 59 Q60203-Y59 A LY 3 BCY 9 VII Q60203-Y69-G Be f BCY 59 VIII Q60203-Y59-H 13541 e452 ga S4t0a BCY 59 IX Q60203-Y59-J BCY 59 X Q60203-Y59-K Approx. weight 0.3 g Dimensions in mm BCY65E Q60203-Y65-S2 BCY 65 E Vil Q60203-Y65-E7 BCY 65 E vill Q60203-Y65-E8 BCY 65 E IX Q60203-Y65-E9 Maximum ratings BCY58 | BCYS59 | BCYGSE Collector-emitter voltage Vers 32 45 60 Vv Collector-emitter voltage Vero | 32 45 60 Vv Emitter-base voltage Vepo | 7 7 7 Vv Collector current Io 200 200 100 mA Base current Ig 50 50 50 mA Junction temperature Tj 200 200 200 C Storage temperature range Tstg -65 to +200 . C Total power dissipation (TcaseS45C) Prot 1 | 1 1 Ww Thermal resistance Junction to ambient air Rina | S450 $450 $450 K/W Junction to case Rinse | 150 $150 $150 K/W Static characteristics (Tap = 25C) The transistors are grouped according to the DC current gain hee and marked by Roman numerals. 352 1729 E-02 van neha CRE se rit crm PO - mk eee e5 Dd MM 4235605 0004307 maSIEG AC 043507 BCY 58 SIEMENS AKTIENGESELLSCHAF BCY 59 BCY 65E Static characteristics (Tanp = 25C) 7 - o q - oe we Type BCY 65E BCY65E BCYG65E - BCY 58 BCY 58/59 | BCY 58/59 | BCY 58/59 BCY 58/59 BCY 59 hee group | Vil Vill IX Xx BCY 65E Vee | tc hee hee ee hee Vee Vo {mA | Ie/Ig Ic/ Tp Io/ Ip Io/Ip V 5 0.01 | 78 145 (>20) 220 (> 40) 300 (> 100) 0.5 5 2 170 250 350 500 0.62 (120 to 220) | (180 to 310) | (260 to 460) | (380 to 630) | (0.55 to 0.7)" 1 10 190 260 380 550 0.7 (> 80) (120 to 400) | (160 to 630) | (240 to 1000) 1 50!) | >40 >45 >60 - 0.76 1 1002)| >40 >45 >60 >60 0.76 Saturation voltages: Voesat | Varcat (Ig = 10 mA; Ig = 0.25 mA) 0.12 (<0.35) 0.7 (<0.85) Vv (Ig = 10 mA; Jg = 2.5 mA)?! 0.3 (<0.7) 0.9 (< 1.2) Vv (Ig = 50 mA; Ig = 1.25 mA)? 0.1 (<0.7) 0.9 (<1.2) Vv . BCY 58 BCY 59 BCY 65E Collector cutoff current (Voces = 32 V) Ices 0.2 (<10) - - nA* (Vces = 45 V) Ices - 0.2 (<10) - nA* (Vcgs = 60 V) Ices - - 0.2 (<10) | nA* Collector cutoff current (Voces = 32 V, Tam = 150C) Ices 0.2 (< 10) - = pA (VcEs =45V; Tamb = 150C) Toes - 0.2 (<10) - pA (Vers = 60 V; Tamb = 150C) Ices - - 0.2 (<10) | HA Collector cutoff current (Vee =32V; Vee =0.2V; Tamb = 100C} Ieex <20 - - pA (Voge = 45 Vi Veg = 0.2 V; Tamb = 100C) Toex - <20 - pA (Vee = 60 V: Veg = 0.2 V; Tamb = 100C} Icex - - <20 HA Emitter cutoff current (Vego = 5 V) lepo <10 <10 <10 nA Collector-emitter breakdown voltage (Ice9 = 2 mA) Vierjceo >32 >45 >60 Vv Emitter-base breakdown voltage Uego =1 pA) Vipr)eBo >7 >7 >7 vt 1) applies only to BCY 65 E 2) applies only to BCY 58, BCY 59 *) AQL = 0.65% 353 1730 -03 Qi ER ea ey PY A ade u e ssanetiange acd RTT ote .25C D MM 8235605 0004308 7 MMSIEG, 7=29~dD __.25 04308 OD BCY 58 BCY 59 SIEMENS AKTIENGESELLSCHAF - acy 65E Dynamic characteristics (Tamp = 26C) | BCYS8 | BCY59 | BCYESE | Transition frequency (Ic = 10 mA; Vee = 5 V; f = 100 MHz) & 250 (> 125)} 250 (> 125)! 250 (>125)| MHz Collector-base capacitance (Veeo = 10 V; f = 1 MHz) Ccso 3.5 (<6) 3.5 (<6} 3.5 (<6) pF Emitter-base capacitance (Veno = 0.5 V; f = 1 MHz) Ceso 8 (<15) 8 (<15) 8 (<15) pF Noise figure (Jc = 0.2 mA; Vee = 5 Vi Rg = 2 kQ; f= 1 kHz; Af = 200 Hz) NF 2 (<6) 2 (<6) 2 (<6) dB Four-pole characteristics (Ic = 2 mA; Voge = 5 V; f = 1 kHz) hee group| VII | vu | Ix | x | Mite 2.7 (1.6 to 4.5) | 3.6 (2.5 to 6) 4.5 (3.2 to 8.5) | 7.5(45to12) | kQ M2. 1.5 2 2 3 10-4 hate 200 260 330 520 - ha29 18 (<30) 24 (<50) 30 60) 50 (< 100) nS Switching times: Operating point: BCY 58; BCY 59; BCY 65 E JotIg1:Ig2 approx. 10:1:1 mA; Ry = 5 kQ; Ro = kO; Veg = 3.6 V3 A, = 990.9 . ty 35 ns ts 400 ns t 50 ns ty 80 ns ton 85 (< 150) ns tott 480 (<800) ns Switching times: Operating point: BCY 58; BCY 59 Te:lg1 :7Jgz approx. 100:10:10 mA; R,=500Q; Ro = 70009; Ves =5 V; AL =98Q0 ty 5 ns ts 250 ns t, 50 ns t 200 ns ton 55 (<150) ns toft 450 (<800) ns Switching times: Operating point: BCY 65 E Io:1gy:Jg2 approx. 50:5:5 mA; Ry = 1kO: Ro = 1.3 kO: Veg = 4.7 V; RL =195Q9 ty 15 ns t, 300 ns t, 50 ns tr 150 ns ton 65 (<150) ns toe | 450 (<800) ns Test circuit for switching times: Veg +10V(Yig) us ay ian Pe ens Z,2100kQ Rr B08 354 1731 E-04 cen se ve tae ote wy WA dee 25C D MM A235605 0004309 9 MESIEG 7+ 29-23, 25C 04309 SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature Prt = f 1); Ry, = parameter, VoeS Vceo BCY 8, BCY 59, BCY 65E 42 40 Prot 0 100 200C OC current gain he = f (Ze) Vee =1V; Tamb = Parameter (common emitter configuration) ome Average Values eww me Scattning limit at Tamb=25C 6101 51 5 vw 102mA - If 1732 E-05 Dd. BCY 58 BCY 59 BCY 65E Permissible pulse load A nic *f (0s v=parameter W BCY 58, BCY 59, BCY 65 E 0 5 nie A 10? 5 to" 5 wp! <4 we wi w* w? 0? 07 10 10's r} Collector current I = f (Vee) Vee =1V (common emitter configuration) mA BCY 58, BCY 59, BCY 65 E we 5 values rn Seattering finit atTamp=25C 10! 5 09 5 01 eee ee ee deal emt deste im oon re RA MA i = ner pam