2006-2013 Microchip Technology Inc. DS20001422F-page 1
TC4426/TC4427/TC4428
Features
• High Peak Output Current:1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Ca pacit ive Load Drive C apab ility: 10 00 pF i n
25 ns (typical)
• Short Delay Times: 40 ns (typical)
• Matched Rise and Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 4 mA
- With Logic ‘0’ Input – 400 µA
• Low Output Impedance: 7
• Latch-Up Protected: Withstands 0.5A Reverse
Current
• Input Withstands Negative Inputs Up to 5V
• Electros t ati c Disc ha rge (ESD ) Protect ed: 2.0 kV
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN-S
Packages
Applications
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer D rive
General Description
The TC4426/TC4427/TC4428 are improved versions
of the earlier TC426/TC427/TC428 family of MOSFET
drivers. The TC4426/TC4427/TC4428 devices have
matched rise and fall times when charging and
discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
2.0 kV.
The TC4426/TC4427/TC4428 MOSFET drivers can
easily charge/discharge 1000 pF gate capacitances in
under 30 ns. These devices provide low enough
impeda nce s in both the on an d off states to ensure the
MOSFET’ s intende d state i s not affect ed, even by large
transients.
Other compatible drivers are the TC4426A/TC4427A/
TC4428A family of devices. The TC4426A/TC4427A/
TC4428A devices have matched leading and falling
edge input-to-output delay times, in addition to the
matched rise and fall times of the TC4426/TC4427/
TC4428 devices.
Package Types
1
2
3
4
NC
5
6
7
8OUT A
OUT B
NC
IN A
GND
IN B VDD
TC4426
TC4427
TC4426 TC4427
NC
OUT A
OUT B
VDD
TC4428
NC
OUT A
OUT B
VDD
TC4428
NC
OUT A
OUT B
VDD
TC4426 TC4427
NC
OUT A
OUT B
VDD
TC4428
NC
OUT A
OUT B
VDD
8-Pin MSOP/
PDIP/SOIC
GND
IN A
IN B
1
2
3
4
8
7
6
5
NC
EP
9
8-Pin DFN-S*
* Includes Exposed Thermal Pad (EP); see Table 3-1.
1.5A Dual High-Speed Power MOSFET Drivers
TC4426/TC4427/TC4428
DS20001422F-page 2 2006-2013 Mic rochip Technology Inc.
Functional Block Diagram
Effective
Input C = 12 pF
(Each Input) TC4426/TC4427/TC4428
Output
Input
GND
VDD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: TC4426 has two inverting drivers, while the TC4427 has two non-inverting
drivers. The TC4427 has one inverting and one non-inverting driver.
2: Ground any unused driver input.
1.5 mA
2006-2013 Microchip Technology Inc. DS20001422F-page 3
TC4426/TC4427/TC4428
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage.....................................................+22V
Input Voltage, IN A or IN B
.....................................(VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA 70°C)
DFN-S .......................................................... Note 3
MSOP..........................................................340 mW
PDIP............................................................730 mW
SOIC............................................................470 mW
Storage Temperature Range..............-65°C to +150°C
Maximum Junction Temperature......................+150°C
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and funct ional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
DC CHARACTERISTICS
Name Function
NC No Connection
IN A Input A
GND Ground
IN B Input B
OUT B Output B
VDD Supply Input
OUT A Output A
NC No Connection
Electrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V Note 2
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN -1.0 — +1.0 µA 0VVINVDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stance RO—710IOUT = 10 mA, VDD = 18V
Peak Output Current IPK —1.5—AV
DD = 18V
Latch-Up Prote cti on
Withstand Reverse Current IREV — > 0.5 — A Duty cycle2%, t 300 µs
VDD = 18V
Switching T ime (Note 1)
Rise Time tR—1930nsFigure 4-1
Fall Time tF—1930nsFigure 4-1
Delay Time tD1 —2030nsFigure 4-1
Delay Time tD2 —4050nsFigure 4-1
Power Supply
Power Supply Current IS—
——
—4.5
0.4 mA VIN = 3V (Both inputs)
VIN = 0V (Both inputs )
Note 1: Switching times ensured by design.
2: For V temperature range devices, the VIH (Min) limit is 2.0V.
3: Package power dissipation is dependent on the copper pad area on the PCB.
TC4426/TC4427/TC4428
DS20001422F-page 4 2006-2013 Mic rochip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V Note 2
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN -10 — +10 µA 0VVINVDD
Output
High Output Voltage VOH VDD – 0.0 25 — — V DC Test
Low Ou tput Voltage VOL ——0.025VDC Test
Output Re si stance RO—912IOUT = 10 mA, VDD = 18V
Peak Output Current IPK —1.5—AV
DD = 18V
Latch-Up Prote cti on
Withstand Reverse Current IREV — >0.5 — A Duty cycle2%, t 300 µs
VDD = 18V
Switching T ime (Note 1)
Rise Time tR——40nsFigure 4-1
Fall Time tF——40nsFigure 4-1
Delay Time tD1 ——40nsFigure 4-1
Delay Time tD2 ——60nsFigure 4-1
Power Supply
Power Supply Current IS—
——
—8.0
0.6 mA VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
2: For V temperature range devices, the VIH (Min) limit is 2.0V.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) TA0—+70°C
Specified Temperature Range (E) TA-40 — +85 °C
Specified Temperature Range (V) TA-40 — +125 °C
Maximum Junction Tempe ratur e TJ— — +150 °C
Storage Temperature Range TA-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN-S JA —33.2—°C/W
Thermal Resistance, 8L-MSOP JA —206—°C/W
Thermal Resistance, 8L-PDIP JA —125—°C/W
Thermal Resistance, 8L-SOIC JA —155—°C/W
2006-2013 Microchip Technology Inc. DS20001422F-page 5
TC4426/TC4427/TC4428
2.0 TYPI CAL PERFORMANCE CURV ES
Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay Time vs.
Supply Voltage.
Note: The graph s and tab les provi ded followi ng this note are a sta tistical summary bas ed on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
tRISE (nsec)
4681012
14 16 18
100 pF
470 pF
2200 pF
1500 pF
100
1000 pF
80
60
40
20
0
V
DD (V)
100 1000 10,000
C (pF)
LOAD
5V
10V
15V
100
80
60
40
20
0
tRISE (nsec)
Time (nsec)
tRISE
Temperature (˚C)
C = 1000 pF
LOAD
V = 17.5V
DD
60
–55 –35 5 25 45 65 85 105 125–15
tFALL
50
40
30
20
10
tFALL (nsec)
4681012
14 16 18
100 pF
470 pF
1000 pF
2200 pF
1500 pF
100
80
60
40
20
0
VDD (V)
100 1000 10,000
5V
10V
C (pF)
LOAD
100
80
60
40
20
0
tFALL (nsec)
15V
20
25
30
35
40
45
50
55
60
65
70
75
80
4 6 8 10 12 14 16 18
VDD (V)
Propagation Delay (nsec)
tD1
tD2
CLOAD = 1000 pF
VIN = 5V
TC4426/TC4427/TC4428
DS20001422F-page 6 2006-2013 Mic rochip Technology Inc.
Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V.
FIGURE 2-7: Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8: Supply Current vs. Supply
Voltage.
FIGURE 2-9: Output Resistance (ROH) vs.
Supply Voltage.
FIGURE 2-10: Propagation Delay Time vs.
Temperature.
FIGURE 2-11: Supply Current vs.
Temperature.
FIGURE 2-12: Output Resistance (ROL) vs.
Supply Voltage.
10
15
20
25
30
35
40
45
50
55
60
0123456789101112
Input Amplitude (V)
Propagation Delay (nsec)
tD1
tD2
CLOAD = 1000 pF
VDD = 12V
4
I (mA)
QUIESCENT
186 8 10 12 14 16
0.1
Both Inputs = 1
Both Inputs = 0
V
DD
1
4681012
14 16 18
V
DD
RDS(ON) (Ω)
20
25
15
10
5
Worst Case @ TJ = +150˚C
Typical @ TA = +25˚C
10
15
20
25
30
35
40
45
-55 -35 -15 5 25 45 65 85 105 125
Temperature (ºC)
Delay Time (nsec)
tD1
tD2
CLOAD = 1000 pF
VIN = 5V
VDD = 18V
T
A
(˚C)
I
QUIESCENT
(mA)
4.0
3.5
3.0
2.5
2.0
–55 –35 –15 5 25 45 65 85 105 125
V = 18V
DD
Both Inputs = 1
4681012
14 16 1
8
20
V
DD
25
15
10
5
Worst Case @ T
J
= +150˚C
Typical @ TA = +25˚C
R
DS(ON)
(Ω)
2006-2013 Microchip Technology Inc. DS20001422F-page 7
TC4426/TC4427/TC4428
Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V.
FIGURE 2-13: Su ppl y Cur rent vs .
Capacitive Load .
FIGURE 2-14: Su ppl y Cur rent vs .
Capacitive Load .
FIGURE 2-15: Su ppl y Cur rent vs .
Capacitive Load .
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
60
100 1000 10,000
ISUPPLY (mA)
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
C (pF)
LOAD
V = 18V
DD
50
40
30
20
10
0
100 1000 10,000
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
V = 12V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
ISUPPLY (mA)
100 1000 10,000
2 MHz
200 kHz
20 kHz
600 kHz
900 kHz
V = 6V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
ISUPPLY (mA)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
V = 18V
DD
100 pF
60
50
40
30
20
10
0
ISUPPLY (mA)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 12V
DD
60
50
40
30
20
10
0
ISUPPLY (mA)
10 100 1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 6V
DD
60
50
40
30
20
10
0
ISUPPLY (mA)
TC4426/TC4427/TC4428
DS20001422F-page 8 2006-2013 Mic rochip Technology Inc.
Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V.
FIGURE 2-19: Crossover Energy vs.
Supply Voltage.
4
A • sec
186 8 10 12 14 16
8
7
6
5
4
3
2
10–9
10–8
9
V
DD
Note: The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single dri ver , divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
2006-2013 Microchip Technology Inc. DS20001422F-page 9
TC4426/TC4427/TC4428
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE (1)
3.1 Inputs A and B
MOSFET driver inputs A and B are high-impedance,
TTL/CMOS compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2 Ground (GND)
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak current flows out the
ground pin(s) when the capacitive load is being
discharged.
3.3 Output A and B
MOSFET driver outputs A and B are low-impedance,
CMOS push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4 Supply Input (VDD)
The VDD in put is the bias s upply for the MO SFET driver
and is ra t e d for 4. 5V to 18 V wi th res pe c t to th e gr o u nd
pin. The VDD input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.
3.5 Exposed Metal Pad
The exposed metal pad of the 6x5 DFN-S package is
not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB), to aid
in heat removal from the package.
8-Pin PDIP/
MSOP/SOIC 8-Pin
DFN-S Symbol Description
1 1 NC No connection
2 2 IN A Input A
33GNDGround
4 4 IN B Input B
55OUT BOutput B
66V
DD Supply input
77OUT AOutput A
8 8 NC No connection
— PAD NC Exposed Metal Pad
Note 1: Duplicate pins must be connected for proper operation.
TC4426/TC4427/TC4428
DS20001422F-page 10 2006-2013 Microchip Technology Inc.
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circuit.
CL = 1000 pF
0.1 µF
4.7 µF
Inverting Driver
Non-Inverting Driver
Input
VDD = 18V
Input
Output
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = t FALL 10 ns
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
VDD
0V
90%
10%
10% 10%
90%
+5V
VDD
0V
0V
0V
90%
3
27
6
45
2006-2013 Microchip Technology Inc. DS20001422F-page 11
TC4426/TC4427/TC4428
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
NNN
PIN 1
NNN
PIN 1
Legend: XX...X Customer specific information*
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Note: In the event th e full Mi crochi p pa rt numbe r cannot be marke d on one li ne, it wi ll
be carried ov er to the ne xt li ne thus lim iti ng th e nu mb er of av ai lab le c hara ct ers
for customer specific information.
*S tandard device marking consists of Microchip part number, year code, week code and traceability code.
TC4426
EMF
1315
256
4426C
315256
XXXXXXXX
XXXXXNNN
YYWW
TC4427
CPA256
1315
TC4428
COA0420
256
8-Lead DFN-S (6x5x0.9 mm)
8-Lead MSOP (3x3 mm)
8-Lead PDIP (300 mil)
8-Lead SOIC (150 mil)
Example
Example
Example
Example
TC4426/TC4427/TC4428
DS20001422F-page 12 2006-2013 Microchip Technology Inc.
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NOTE 2
A1
A
A3
NOTE 1 12
E
N
D
EXPOSED PAD
NOTE 1
21
E2
L
N
e
b
K
BOTTOM VIEW
TOP VIEW
D2
2006-2013 Microchip Technology Inc. DS20001422F-page 13
TC4426/TC4427/TC4428
$
TC4426/TC4427/TC4428
DS20001422F-page 14 2006-2013 Microchip Technology Inc.
1RWH For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8$
2006-2013 Microchip Technology Inc. DS20001422F-page 15
TC4426/TC4427/TC4428
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
UA
TC4426/TC4427/TC4428
DS20001422F-page 16 2006-2013 Microchip Technology Inc.
8-Lead Plastic Micro Small Outline Package (UA) [MSOP]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2006-2013 Microchip Technology Inc. DS20001422F-page 17
TC4426/TC4427/TC4428
%&&'()) !%#
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N
E1
NOTE 1
D
123
A
A1
A2
L
b1
b
e
E
eB
c
TC4426/TC4427/TC4428
DS20001422F-page 18 2006-2013 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2006-2013 Microchip Technology Inc. DS20001422F-page 19
TC4426/TC4427/TC4428
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
TC4426/TC4427/TC4428
DS20001422F-page 20 2006-2013 Microchip Technology Inc.
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2006-2013 Microchip Technology Inc. DS20001422F-page 21
TC4426/TC4427/TC4428
APPENDIX A: REVISION HISTORY
Revision F (September 2013)
The following is the list of modifications:
1. Updated the Electrostatic Discharge (ESD)
rating to 2kV in Section “Features”.
2. Updated the package drawings in Section 5.0
“Packaging Information”.
3. Minor typographical and editorial corrections.
Revisions E (December 2012)
• Added a note to each package outline drawing.
2006-2013 Microchip Technology Inc. DS20001422F-page 22
TC4426/TC4427/TC4428
NOTES:
2006-2013 Microchip Technology Inc. DS20001422F-page 23
TC4426/TC4427/TC4428
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC4426: 1.5A Dual MOSF ET Dri ver, Inverting
TC4427: 1.5A Dual MOSFET Driver, Non-Inverting
TC4428: 1.5A Dual MOSF ET Driver, Complementary
Temperature Range: C = 0°C to +70°C (PDIP and SOIC only)
E = -40°C to +85°C
V = -40°C to +125°C
Package: MF = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead
(Tape and Ree l)
OA = Plastic SOIC, (150 mil Body), 8-lead
OA713 = Plastic SOIC, (150 mil Body), 8-lead
(Tape and Ree l)
PA = Plastic DIP (300 mil Body), 8-lead
UA = Plastic Micro Small Outline (MSOP), 8-lead
UA713 = Plastic Micro Small Outline (MSOP), 8-lead
(Tape and Ree l)
Examples:
a) TC4426COA: 1.5A Dual Inverting
MOSFET driver,
0°C to +70°C
SOIC package.
b) TC4426EUA: 1.5A Dual Inverting
MOSFET driver,
-40°C to +85°C.
MSOP package.
c) TC4426EMF: 1.5A Dual Inverting
MOSFET driver,
-40°C to +85°C,
DFN-S package.
a) TC4427CPA: 1.5A Dual Non-Inverting
MOSFET driver,
0°C to +70 ° C
PDIP package.
b) TC4427EPA: 1.5A Dual Non-Inverting
MOSFET driver,
-40°C to +85°C
PDIP package.
a) TC4428COA713:1.5A Dual Complementary
MOSFET driver,
0°C to +70°C,
SOIC package,
Tape and Reel.
b) TC4428EMF: 1.5A Dual Complementary,
MOSFET driver,
-40°C to +85°C
DFN-S package.
PART NO. XXX
PackageTemperature
Range
Device
XXX
Tape & Reel
X
PB Free
TC4426/TC4427/TC4428
DS20001422F-page 24 2006-2013 Microchip Technology Inc.
NOTES:
2006-2013 Microchip Technology Inc. DS20001422F-page 25
Information contained in this publication regarding device
applications a nd the lik e is provid ed only for your convenien ce
and may be supers ed ed by u pdates. I t is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PI C 32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
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MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology I nc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM ,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE , In - Circuit Serial
Programm ing, ICSP, Mindi, MiWi, M PASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
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SQTP is a service mark of Microchip T echnology Incorporated
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GestIC and ULPP are registered trademarks of Microchip
Technolo gy Germany II Gm bH & Co. KG, a subsidiary of
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All other trademarks mentioned herein are property of their
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© 2006-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-429-8
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that it s family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS20001422F-page 26 2006-2013 Microchip Technology Inc.
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08/20/13
