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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
September 2013
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC20 A
Collector Current @ TC = 100oC10 A
ICM (1) Pulsed Collector Current @ TC = 25oC30 A
IFDiode Forward Current @ TC = 25oC10 A
Diode Forward Current @ TC = 100oC5 A
PD Maximum Power Dissipation @ TC = 25oC 139 W
Maximum Power Dissipation @ TC = 100oC 56 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.9 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 3.5 oC/W
RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 62.5 oC/W
FGP10N60UNDF
600 V, 10 A
Short Circuit Rated IGBT
Features
Short Circuit Rated 10 us
High Current Capability
High Input Impedance
Fast Switching
•RoHS Compliant
Applications
Sewing Machine, CNC, Home Appliances, Motor Control
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
G
C
E
TO-220
G C E
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGP10N60UNDF FGP10N60UNDF TO-220 - - 50ea
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown V olt age VGE = 0 V, IC = 250 μA 600 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±10 uA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 10 mA, VCE = VGE 5.5 6.8 8.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 10 A, VGE = 15 V - 2 2.45 V
IC = 10 A, VGE = 15 V,
TC = 125oC-2.3- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 517 pF
Coes Output Capacitance - 65 pF
Cres Reverse Transfer Capacitance - 20 pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 10 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
-8.0 ns
trRise Time - 6.3 ns
td(off) Turn-Off Delay Time - 52.2 ns
tfFall Time - 19.1 24.8 ns
Eon Turn-On Switching Loss - 0.15 mJ
Eoff Turn-Off Switching Loss - 0.05 mJ
Ets Total Switching Loss - 0.2 mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 10 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
-8.1 ns
trRise Time - 7.3 ns
td(off) Turn-Off Delay Time - 55.1 ns
tfFall Time - 34.2 ns
Eon Turn-On Switching Loss - 0.22 mJ
Eoff Turn-Off Switching Loss - 0.08 mJ
Ets Total Switching Loss - 0.3 mJ
Tsc Short Circuit Withstand Time VCC = 350 V,
RG = 100 Ω, VGE = 15V ,
TC = 150oC10 - - μs
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
QgTotal Gate Charge VCE = 400 V, IC = 10 A,
VGE = 1 V
-37 nC
Qge Gate to Emitter Charge - 5 nC
Qgc Gate to Collector Charge - 21 nC
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 10 A TC = 25oC- 1.8 2.2V
TC = 125oC- 1.7
trr Diode Reverse Recovery Time
IF = 10 A, dIF/dt = 200 A/μs
TC = 25oC - 37.7 ns
TC = 125oC - 78.9
Qrr Diode Reverse Recovery Charge TC = 25oC- 75 nC
TC = 125oC - 221
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
TTypical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0246810
0
10
20
30
40
50
60
70
80
20V 17V
TC = 25oC
15V
VGE = 12V
Collector Current, IC [A]
Collector-Emitter Volta
g
e
,
V
CE
[
V
]
0246810
0
10
20
30
40
50
60
70
80 20V 17V
TC = 125oC
15V
VGE = 12V
Collector Current, IC [A]
Collector-Emitter Volta
g
e
,
V
CE
[
V
]
CE
0 3 6 9 12 15
0
10
20
30
40
50
60 Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-E m itter V o ltag e ,V
GE
[V]
25 50 75 100 125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20A
10A
IC = 5A
Comm on Em itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Temp erature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 5A
10A
20A
Comm on Em itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter V o ltag e , V
GE
[V]
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 5A
10A 20A
Comm on Em itter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter V o ltag e , V
GE
[V]
110
10
100
1000
Comm on E m itter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V] 30
3000
0 5 10 15 20 25 30 35 40 45 50
0
3
6
9
12
15
Comm on E m itter
TC = 25oC
400V
200V
VCC = 100V
Gate-Emitter Voltage, VGE [V]
Ga te Charg e , Q
g
[nC]
1 10 100 1000
0.01
0.1
1
10
100
Single N onre p e titiv e
Pulse TC = 25oC
Curv es m us t be de ra ted
linea rly with in c re ase
in temperature
1ms
10 ms
DC
10μs
100μs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
0 102030405060
1
10
Common Emitter
VCC = 400V , VGE = 15V
IC = 10A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance,
R
G
[
Ω
]
50
0 102030405060
10
100
1000
Co mmon Emitter
VCC = 400V, VGE = 15V
IC = 10A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 13. Turn-on Charac teristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss vs. Figure 16. Switching Loss vs
Gate Resistance Collector Current
Figure 17. Turn off Switching Figure 18. Forward Characteristics
SOA Characteristics
0 5 10 15 20 25
10
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Collector Current, IC
[
A
]
300
5
0 5 10 15 20 25
1
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Collector Current, IC
[
A
]
30
0 5 10 15 20 25
100
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
1000
0 102030405060
10
100
1000
Common Emitter
VCC = 4 00V , VGE = 15V
IC = 10A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [μJ]
Gate Resistance
,
R
G
[
Ω
]
5
0123
TJ = 75oC
30
10
1
TJ = 25oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
1 10 100 1000
1
10
Safe Operating A rea
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
50
©2012 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
Figure 21. Reverse Recovery Time
Figure 22.Transient Thermal Impedance of IGBT
024681012
0.0
0.1
0.2
0.3
TC = 25oC
TC = 125oC
200A/μs
diF/dt = 100A/μs
Stored Recovery charge, Qrr [nC]
Forward Current
,
IF
[
A
]
200A/μs
diF/dt = 100A/μs
50 200 400 600
1E-3
0.01
0.1
1
10
100
Reverse Recovery Current , Irr [μA]
Reverse Voltage, V
R
[V]
TJ = 125oC
TJ = 25oC
TJ = 75oC
024681012
0
20
40
60
80
100
TC = 25oC
TC = 125oC
200A/μs
diF/dt = 100A/μs
Reverse Recovery Time, trr [nS]
Forward Current
,
IF
[
A
]
200A/μs
diF/dt = 100A/μs
1E-5 1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Facto r, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
0.00001 0.0001 0.001 0.01 0.1
0.005
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single p ulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
©2012 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGP10N60UNDF Rev. C1
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
Mechanical Dimensions
Figure 23. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semicond uctor r epresentative to ver ify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimensions in Millimeters
FGP10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT
www.fairchildsemi.com9
©2012 Fairchild Semiconductor Corpo ration
FGP10N60UNDF Rev. C1
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