2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–104 March 1, 2000-00
FEATURES
• High Current Transfer Ratio, 75% to 450%
• Minimum Current Transfer Ratio, 10%
• Guaranteed at
I
F
=1.0mA
• High Collector-Emitter Voltage, BV
CEO
=70V
• Long Term Stability
• Industry Standard DIP Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°
C....................... 100 mW
Derate Linearly from 25
°
C ................. 1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage,
BV
CEO
........................................................ 70 V
Emitter-Collector Breakdown Voltage,
BV
ECO
....................................................... 7.0 V
Collector-Base Breakdown Voltage,
BV
CBO
....................................................... 70 V
Power Dissipation.................................... 200 mW
Derate Linearly from 25
°
C ................... 2.6 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 V
RMS
Total Package Dissipation at 25
°
C A
(LED + Detector).................................. 250 mW
Derate Linearly from 25
°
C ................... 3.3 mW/
°
C
Creepage ...............................................
≥
7.0 min
Clearance...............................................
≥
7.0 min
Storage Temperature ................ –55
°
C to +150
°
C
Operating Temperature ............ –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ..................10 sec.
V
DE
Characteristics
0
°
C to 70
°
C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
— 1.2 1.5 V
I
F
=20 mA
Forward Voltage — 1.0 1.2
I
F
=1.0 mA
Breakdown Voltage 6.0 20 —
I
R
=10
µ
A
Reverse Current
I
R
— 0.1 10
µ
A
V
R
=6.0 V
T
A
=25°C
Detector
Transistor Gain HFE 100 200 — —
V
CE
=5.0 V
I
C
=100
µ
A
Breakdown Voltage
Collector-Emitter
BV
CEO
70——V
I
C
=100
µ
A
Breakdown Voltage
Emitter-Collector
BV
ECO
7.0 10 —
I
E
=100
µ
A
Breakdown Voltage
Collector-Base
BV
CBO
70 90 —
I
C
=10
µ
A
Leakage Current
Collector-Emitter
I
CEO
— 5.0 50 nA
V
CE
=10 V,
T
A
=25°C
Package
Base Current Transfer
Ratio
CTRCB 0.15 — — %
I
F
=10 mA
V
CB
=10 V
V
CEsat
— — 0.4 V
I
F
=10 mA
I
C
=2.0 mA
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
75
125
225
100
200
300
150
250
450
%
I
F
=10 mA,
V
CE
=10 V
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
10
30
50
——%
I
F
=1.0 mA,
V
CE
=10 V
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
IL201/IL202/IL203
Phototransistor
Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL201/202/203
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–105 March 1, 2000-00
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and
saturated CTR at
T
A
=25
°
C versus LED current
Figure 3. Normalized non-saturated and
saturated CTR at
T
A
=50
°
C versus LED current
Figure 4. Normalized non-saturated and
saturated CTR at
T
A
=70
°
C versus LED current
Figure 5. Normalized non-saturated and saturated
CTR at
T
A
=85
°
C versus LED current
Figure 6. Collector-emitter current versus temperature
and LED current
Figure 7. Collector-emitter leakage current versus
temperature
Figure 8. Normalized CTRcb versus LED current
and temperature
.1 1 10 100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
IF - Forward Current - mA
VF - Forward Voltage - V
TA = -55°C
TA = 100°C
TA = 25°C
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR(SAT)
NCTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
TA = 50°C
NCTR(SAT)
NCTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
TA = 70°C
NCTR(SAT)
NCTR
IF - LED Current - mA
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
TA = 85°C
NCTR(SAT)
NCTR
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
0102030405060
35
30
25
20
15
10
5
0
50°C
70°C
85°C
IF - LED Current - mA
ICE - Collector Current - mA
25°C
-20 0 20 40 60 80 100
105
104
103
102
101
100
10-1
10-2
TA - Ambient Temperature - °C
ICEO - Collector-Emitter - nA
VCE = 10 V
Typical
.1 1 10 100
0.0
0.5
1.0
1.5
25°C
50°C
70°C
IF - LED Current - mA
NCTRcb - Normalized CTRcb
Normalized to:
IF =10 mA
Vcb = 9.3
V
Ta = 25°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL201/202/203
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–106 March 1, 2000-00
Figure 12. Propagation delay versus collector load
resistor
Figure 13. Normalized non-saturated and saturated
CTR
ce
versus LED current
Figure 14. Normalized non-saturated HFE versus
base current and temperature
100101.1
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - K Ω
tpLH - Propagation Delay - µs
tpLH
tpHL
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpLH - Propagation Delay - µs
.1 1 10 100
0.0
0.5
1.0
1.5
2.0
Vce = .4 V
Vce = 5 V
IF - LED Current - mA
NCTRce - Normalized CTRce
Ta = 25 °C
Vce = 5 V
IF = 1 mA
Normalized to:
1 10 100 1000
0.4
0.6
0.8
1.0
1.2
Ib - Base Current - µA
NHFE - Normalized HFE
Ib = 20µA
Vce = 10 V
Ta = 25°C
-20°
C
25°C
50°C
70°C Normalized to:
Figure 9. Collector base photocurrent versus LED
current
Figure 10. Normalized photocurrent versus
I
F
and temperature
Figure 11. Normalized saturated HFE versus base
current and temperature
100
101.1
.01
.1
1
10
100
1000
IF - LED Current - m
A
Icb - Collector Base
Photocurrent - µA
Icb = 1.0357 *IF ^1.3631
Ta = 25°C
100
101.1
.01
.1
1
10
NIB-Ta= 20°C
NIb,Ta=25°C
NIb,Ta=50°C
NIb,Ta=70°C
If - LED C urrent - m A
Norma lized Photocurrent
Normalized to:
If = 10ma, Ta = 25°C
1 10 100 1000
0.0
0.5
1.0
1.5
2.0
25°
C
50°
C
70°C
Ib - Base Current - µA
NHFE(sat) - Normalized
Saturated HFE
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
Vce = 0.4 V
