Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 1 of 3 March 2006
HMJ5
High Dynamic Range FET Mixer Product Information
Product Features
• +35 dBm IIP3
• No external matching element
Required
• RF 40 - 1000 MHz
• LO 30 - 900 MHz
• IF 5 - 250 MHz
• +17 dBm LO Drive Level
• +3V at 35mA DC Power Supply
• Low Cost Surface Mount J-Lead
Package
Product Description
The HMJ5 is a high dynamic range GaAs FET
mixer. This active FET mixer realizes a typical
third order intercept point of +35 dBm at an LO
drive level of +17 dBm. The HMJ5 comes in a
low cost, J-Lead package. Typical applications
include frequency up/down conversion,
modulation and demodulation for receivers and
transmitters used in communications systems.
Functional Diagram
Function Pin No.
IF 2
LO 13
RF 21
+3V 10
Ground All other pins
Specifications (1)
Parameter Units Min Typ Max Condition
RF Frequency Range MHz 40 – 1000
LO Frequency Range MHz 30 – 900
IF Frequency Range MHz 5 – 250
SSB Conversion Loss dB 7.5 9.0
Noise Figure dB 9.5
LO-RF Isolation dB 20 28
LO-IF Isolation dB 24 30
Input IP3 dBm 31 35 RF = 900 MHz @ 0 dBm
RF Return Loss dB 11.7
LO Return Loss dB 6.0
IF Return Loss dB 10.9
Input P1dB dBm +23
LO Drive Level dBm +17
DC Current at +3V Bias mA 35 60
Notes:
1. Test conditions unless otherwise noted: 25 ºC, RF = 905 MHz @ -10 dBm, LO = 900MHz @ +17 dBm, IF = 5 MHz.
2. Measured in a 50-Ohm system with nominal LO drive in a downconverter application only, unless otherwise specified.
3. LO frequency must be separated from IF frequency by a minimum of 2 MHz (i.e., | FLO –FIF | ≥ 2 MHz).
Absolute Maximum Rating Ordering Information
Parameters Rating Part No. Description
Operating Case Temperature -40 to +85 °C HMJ5 High Dynamic Range FET Mixer
Storage Temperature -65 to +100 °C HMJ5-PCB Fully Assembled Application Circuit
Device Voltage +7 V
Device Current 69 mA
Maximum Input Power +25 dBm
Operation of this device above any of these parameters may cause permanent damage.
Total sum of LO port and RF port power should not exceed 25 dBm.
IF
RF LO
+3Vdc