BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BFY50 BFY51
VCBO Collector-Base Voltage (IE=0) 80 60 V
V
CEO Collector-Emitter Voltage (IB=0) 35 30 V
V
EBO Emitter-Base Voltage (IC=0) 6 V
I
CCollector Current 1 A
ICM Collector Peak Current (tp<5ms) 1.5 A
P
tot Total Dissipation at Tamb ≤25 oC
at Tcase ≤25 oC0.8
5W
W
Tstg Storage Temperature -65 to 200 oC
TjMax. Operating Junction Temperature 200 oC
TO-39
1/5
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 35
218
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE=0) for BFY50
VCB =60V
V
CB =60V T
case =100o
C
for BFY51
VCB =40V
V
CB =40V T
case =100o
C
50
2.5
50
2.5
nA
µA
nA
µA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V
V
EB =5V T
case =100o
C50
2.5 nA
µA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC=100µA
for BFY50
for BFY51 80
60 V
V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB=0)
I
C=30mA
for BFY50
for BFY51 35
30 V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC=0)
I
C=100µA6V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=150mA I
B=15mA
for BFY50
for BFY51
IC=1A I
B=0.1A
for BFY50
for BFY51
0.14
0.14
0.7
0.7
0.2
0.35
1
1.6
V
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC=150mA I
B=15mA
I
C=1A I
B=0.1A 0.95
1.5 1.3
2V
V
hFE∗DC Current Gain for BFY50
IC=10mA V
CE =10V
I
C=150mA V
CE =10V
I
C=1A V
CE =10V
for BFY51
IC=10mA V
CE =10V
I
C=150mA V
CE =10V
I
C=1A V
CE =10V
20
30
15
30
40
15
40
55
30
55
70
40
hfe∗Small Signal Current
Gain VCE =6V f=1KHz
I
C=1mA
for BFY50
for BFY51
IC=10mA
for BFY50
for BFY51
25
30
45
60
fTTransition Frequency IC=50mA V
CE =10V
for BFY50
for BFY51 60
50 100
110 MHz
MHz
CCBO Collector Base
Capacitance IE=0 V
CB = 10 V f = 1MHz 10 pF
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤1%
BFY50/BFY51
2/5
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
hie Input Impedance IC=10mA V
CE =5V f=1KHz
for BFY50
for BFY51 180
220 Ω
Ω
hre Reverse Voltage Ratio IC=10mA V
CE =5V f=1KHz
for BFY50
for BFY51 55
70 10-6
10-6
hoe Output Admittance IC=10mA V
CE =5V f=1KHz
for BFY50
for BFY51 30
35 µS
µS
tdDelay Time IC=150mA V
CC =10V
I
B1 =15mA V
BE =-2V 15 ns
trRise Time IC=150mA V
CC =10V
I
B1 =15mA V
BE =-2V 40 ns
tsStorage Time IC=150mA V
CC =10V
I
B1 =-I
B2 =15mA 300 ns
tfFall Time IC=150mA V
CC =10V
I
B1 =-I
B2 =15mA 60 ns
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤1%
BFY50/BFY51
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
o
(typ.)
L
G
I
DA
F
E
B
H
P008B
TO-39 MECHANICAL DATA
BFY50/BFY51
4/5
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesofuse ofsuch informationnor for anyinfringement of patentsor otherrights ofthird parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatentrights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil - Canada- China - France - Germany - Italy - Japan - Korea - Malaysia- Malta- Morocco- The Netherlands-
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
...
BFY50/BFY51
5/5
