CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree's CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz. The package options are ceramic/metal flange and pill package. Package Type : 440162, 4401 61 PN: CGHV142 50F, CGHV142 50P Typical Performance Over 1.2-1.4 GHz (TC = 25C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 365 365 350 310 330 W Gain 18.6 18.6 18.4 17.9 18.2 dB 80 80 77 74 76 % Drain Efficiency Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 s pulse width, 10% duty cycle, PIN = 37 dBm. mber 2015 Rev 1.1 - Dece Features * Reference design amplifier 1.2 - 1.4 GHz Operation * FET Tuning range UHF through 1800 MHz * 330 W Typical Output Power * 18 dB Power Gain * 77% Typical Drain Efficiency * <0.3 dB Pulsed Amplitude Droop * Internally pre-matched on input, unmatched output Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25C Gate-to-Source Voltage VGS -10, +2 Volts 25C Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Maximum Forward Gate Current IGMAX 42 mA 25C Maximum Drain Current1 IDMAX 18 A 25C Soldering Temperature2 TS 245 C 40 in-oz Screw Torque CW Thermal Resistance, Junction to Case RJC 0.95 C/W PDISS = 167 W, 65C 3 Pulsed Thermal Resistance, Junction to Case RJC 0.57 C/W PDISS = 167 W, 500 sec, 10%, 85C Pulsed Thermal Resistance, Junction to Case4 RJC 0.63 C/W PDISS = 167 W, 500 sec, 10%, 85C TC -40, +130 C PDISS = 167 W, 500 sec, 10% 3 Case Operating Temperature5 Note: Current limit for long term, reliable operation Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV14250P 4 Measured for the CGHV14250F 5 See also, the Power Dissipation De-rating Curve on Page 5 1 2 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 41.8 mA Gate Quiescent Voltage VGS(Q) - -2.7 - VDC VDS = 50 V, ID = 500 mA Saturated Drain Current IDS 31.4 37.6 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 - - VDC VGS = -8 V, ID = 41.8 mA DC Characteristics (TC = 25C) 1 2 RF Characteristics3 (TC = 25C, F0 = 1.3 GHz unless otherwise noted) Output Power POUT 275 330 - W VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Drain Efficiency DE 63 77 - % VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Power Gain GP - 18.2 - dB VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Pulsed Amplitude Droop D - -0.3 - dB VDD = 50 V, IDQ = 500 mA Output Mismatch Stress VSWR - 5:1 - Y No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Pulsed Input Capacitance CGS - 150 - pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS - 16 - pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD - 1.35 - pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV14250-AMP. Pulse Width = 500 S, Duty Cycle = 10%. Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - CGHV14250 Typical Sparameters CGHV14250 Typical Sparameters Tcase = 25C V,=IDQ = 500 Vdd V = DD 50=V,50 Idq 500 mA mA 30 20 Magnitude (dB) 10 0 -10 -20 S(2,1) -30 S(1,1) S(2,2) -40 1 1.1 1.2 1.3 1.4 1.5 1.6 Frequency (GHz) Figure 2. - CGHV14250 Typical RF Results CGHV14250 Typical RF Results VDD = 50 V, I Idq = =500 mA, PIN == 37 dBm Vdd = 50 V,DQ 500 mA, Pin 37 dBm Tcase==25C, 25 degPulse C, Pulse Width = 500 us,Duty DutyCycle Cycle = 10 Tcase Width = 500 s, 10% % 450 90 Drain Efficiency 80 Output Power (W) 350 70 Drain Efficiency Output Power 300 250 200 60 Output Power Output Power 50 Gain 40 Drain Efficiency 150 30 Gain Gain Gain Gain 100 20 50 10 0 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 Gain (dB) & Drain Efficiency (%) 400 0 1.50 Frequency (GHz) Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - CGHV14250 Typical RF Results CGHV14250 Typical RF Results V = 50 V, IDQ == 500 mA, Pin PIN == 37 37dBm dBm Vdd 500 mA, DD = 50 V, Idq Tcase = 85 deg C, Pulse Width = 500 us, Duty Cycle = 10 Tcase = 85C, Pulse Width = 500 s, Duty Cycle 10% % 400 80 Drain Efficiency 70 Output Power (W) 300 60 Output Power 250 200 50 Output Power Gain 40 Drain Efficiency 150 30 Gain 100 20 50 10 0 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 Gain (dB) & Drain Efficiency (%) 350 0 1.50 Frequency (GHz) Figure 4. - CGHV14250 CW RF Results VDD = 50 V, IDQCGHV14250F = 500 mA, PCW = 37 dBm, Tcase = 65C IN RF Results Vdd = 50 V, Idq = 500 mA, Pin = 37 dBm, Tcase = 65 C 350 70 300 60 250 50 Output Power 200 40 150 30 Gain 100 20 Pout 50 Gain (dB) and Drain Efficiency (%) Output Power (W) Drain Efficiency 10 Gain 0 1.10 Drain Eff 1.15 1.20 1.25 1.30 Frequency (GHz) 1.35 1.40 1.45 Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV14250 Rev 1.1 0 1.50 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 900 0.6 - j0.3 5.3 + j0.1 1000 0.7 - j0.8 4.3 +j0.8 1100 1.3 - j1.1 3.3 + j0.8 1200 1.8 - j1.1 3.0 + j0.4 1300 2.5 - j0.7 2.5 + j0.4 1400 3.4 - j0.7 2.3 + j0.1 1500 1.8 - j0.9 2.3 + j0 Note 1. VDD = 50 V, IDQ = 500 mA in the 440162 package Note 2. Optimized for power gain, PSAT and Drain Efficiency Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability CGHV14250F Power Dissipation De-rating Curve Figure 4. - CGHV14250 Transient Power Dissipation De-Rating Curve CGHV14250 Transient Power Dissipation De-Rating Curve 180 Pill - 500 s 10% 160 Power Dissipation (W) 140 120 Flange - CW 100 Note 1 80 60 Flange - 500 us 10 % 40 Pill - 500 us 10 % Flange - 1 ms - 20 % 20 0 Pill - 1 ms - 20 % 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV14250-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 1 R3 RES, 1/16W, 0603, 1%, 4700 OHMS 1 L1 INDUCTOR, CHIP, 6.8 nH, 0603 SMT 1 CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F 2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC 1 C3, C4 CAP, 0.5pF, +/-0.05pF, 0805, ATC 600F 2 C5,C6 CAP, 1.0pF, +/-0.05 pF, 0805, ATC 600F 2 CAP, 3.0pF, +/-0.1pF, 250V, 0805, ATC 600F 4 C11,C24 CAP, 47pF,+/-5%, 250V, 0805, ATC 600F 2 C12,C25 CAP, 100pF, +/-5%, 250V, 0805, ATC 600F 2 C13,C26 CAP, 33000PF, 0805,100V, X7R 2 CAP 10uF 16V TANTALUM 1 CAP, 3.9pF, +/-0.1pF, 250V, 0805, ATC 600F 4 CAP, 1.2pF, +/-0.05pF, 0805, ATC 600F 2 C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350, 0.020 MIL THK, CGHV14250, 1.2-1.4GHZ 1 CGHV14250 1 C1, C23 C2 C7,C8,C9,C10 C14 C15,C16,C17,C18 C19,C20 J1,J2 Q1 CGHV14250-AMP Demonstration Amplifier Circuit Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV14250-AMP Demonstration Amplifier Circuit Outline CGHV14250-AMP Demonstration Amplifier Circuit Schematic Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV14250F (Package Type -- 440162) Product Dimensions CGHV14250P (Package Type -- 440161) Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV14250F Type Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Type Value Units 1.4 GHz 250 W F = Flanged P = Package - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV14250F GaN HEMT Each CGHV14250P GaN HEMT Each Test board without GaN HEMT Each CGHV14250P-AMP Test board with GaN HEMT installed Each CGHV14250F-AMP Test board with GaN HEMT installed Each CGHV14250-TB Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV14250 Rev 1.1 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright (c) 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV14250 Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf