TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) General Description The TQP9309 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuitry, suitable for small cell base station applications. TQP9309 provides 32 dB gain and >+28 dBm linear power with pre-distortion correction over the 0.7-1.0 GHz frequency range for Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, and 29. With pre-distortion, the amplifier is able to achieve -50dBc ACLR at 28 dBm output power using a 20 MHz LTE signal. The TQP9309 integrates two high performance amplifier stages onto a module to allow for a compact system design and requires very few external components for operation. The amplifier is bias adjustable allowing the amplifier's power consumption to be optimized. The TQP9309 is available in a lead-free/RoHS-compliant 3.5x4.5mm surface mount package and is pin-compatible to the 1.8-2.2 GHz TQP9321 and 2.5-2.7 GHz TQP9326. 3.5 x 4.5 mm Leadless SMT Package Product Features Frequency Range : 0.7-1.0 GHz Covers multiple bands with one component Fully integrated, 2-stage Power Amplifier Internally matched 50 input/output -50dBc ACLR (corrected) @ +28 dBm Pavg 32 dB Gain 27% PAE @ +28 dBm Pavg In-built Control Bias and Temp. Comp Circuit Single Supply Voltage : 5V Functional Block Diagram Lead-free / RoHS compliant POE Capable RFin VPD1 VPD2 N/C N/C 13 12 11 10 9 Matching Network AMP1 N/C RFout 8 7 Matching Network AMP2 Applications Exposed Backside Pad GND Pin 1 Reference Mark Package Topside 1 2 VBIAS VCC 3 4 5 6 N/C N/C N/C N/C Small-Cell Basestations Enterprise Femtocell Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29 Top View Ordering Information Data Sheet April 13, 2017 | Subject to change without notice Part No. Description TQP9309SR 100 pieces on a 7" reel TQP9309TR13 2500 pieces on a 13" reel TQP9309EVB-01 Evaluation Board - 1 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Absolute Maximum Ratings Parameter Recommended Operating Conditions Rating Parameter -40 to +150 C Storage Temperature Supply Voltage (VCC) +6 V RF Input Power, CW, 50 , T=25 C Min Device Voltage (VDD) Typ -40 TCASE +25 Tj for >106 hours MTTF +10 dBm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Max Units +5 V +85 C +190 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25C, Test Frequency : 900MHz Parameter Conditions Min Operational Frequency Range Output Channel Power Gain Gain Temperature Coefficient ACLR Uncorrected ACLR Corrected Power Added Efficiency Noise Figure Output P3dB P3dB Temperature Coefficient Supply Voltage Quiescent Current, ICQ Operational Current, Icc Typ 700 700 - 800MHz 800 - 960MHz 28.6 29.6 +28 31 32 -0.026 +33.9 -37 -50 27 4 +35 -0.005 5 100 380 See note 1 See note 1 See note 1 85 VSWR Survivability Pout = +26 dBm Signal : WCDMA 1C, PAR = 8 dB Thermal Resistance, jc Module (junction to case) Max Units 960 MHz dBm dB dB dB/C 33.3 127 dBc dBc % dB dBm dBm/C V mA mA - 7:1 28.3 C/W Notes: 1. UsingTable LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm Logic 2. Items in min/max columns in bold at guaranteed by production test at 900 MHz 3. Items in min/max columns that are not a bold font are guaranteed by design Parameter High Low characterization. Enable Data Sheet April 13, 2017 | Subject to change without notice Active Shutdown - 2 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Performance Plots Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25C Gain vs. Output Power vs. Frequency 36 Temp.=+25C 32 34 30 32 28 26 720 MHz 820 MHz 24 22 Temp.=+25C 36 Gain (dB) Gain (dB) 34 Gain vs. Output Power vs. Temperature 38 770 MHz 850 MHz F = 900 MHz 30 28 +85C +25C 26 -40C 24 20 22 18 20 16 18 20 22 24 26 28 30 32 34 36 20 22 24 26 Pout (dBm) 50 45 Efficiency (%) 40 Efficiency vs. Output Power vs. Frequency 60 55 Temp.=+25C 30 32 34 36 Efficiency vs. Output Power vs. Temperature Temp.=+25C 50 CW 45 35 30 700 MHz 770 MHz 820 MHz 850 MHz 900 MHz 960 MHz 25 20 15 10 5 Efficiency (%) 55 28 Pout (dBm) 40 F = 900 MHz CW 35 30 25 20 +85C 15 +25C 10 -40C 5 0 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Pout (dBm) Pout (dBm) Data Sheet April 13, 2017 | Subject to change without notice - 3 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Performance Plots (continued) Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25C ACPR vs. Output Power vs. Frequency -35 820MHz DPD 850MHz DPD 960MHz DPD 770MHz No DPD 820MHz No DPD 850MHz No DPD 960MHz No DPD ACPR vs. Output Power vs. Temperature -35 Signal : LTE 20MHz, PAR = 7.5dB Channel BW UTRA, IBW = 3.84MHz Vcc = 5V, Frequency : 850MHz DPD Polynomial Order : 11 -40 -45 ACPR1(dBc) ACPR1(dBc) -40 770MHz DPD -50 -55 -60 -45 +85C -50 +25C -40C -55 -60 Signal : LTE 20MHz, PAR = 7.5dB Channel BW UTRA, IBW = 3.84MHz DPD Polynomial Order : 11 Temp.=+25C -65 19 20 21 22 23 24 25 26 27 28 29 -65 30 19 20 21 22 23 Pout (dBm) ACPR vs. Output Power vs. Frequency -30 770MHz DPD 820MHz DPD 850MHz DPD 25 26 27 28 29 30 960MHz DPD 770MHz No DPD 820MHz No DPD 850MHz No DPD 960MHz No DPD ACPR vs. Output Power vs. Temperature -35 Signal : LTE 20MHz, PAR = 7.5dB Channel BW UTRA, IBW = 18MHz Vcc = 5V, Frequency : 850MHz DPD Polynomial Order : 11 -40 -40 ACPR1(dBc) ACPR1(dBc) -35 24 Pout (dBm) -45 -50 -45 -50 -55 +85C -55 Signal : LTE 20MHz, PAR = 7.5dB Channel BW EUTRA, IBW = 18MHz DPD Polynomial Order : 11 Temp.=+25C +25C -60 -40C -60 -65 19 20 21 22 23 24 25 26 27 28 29 19 20 21 22 23 Pout (dBm) 40 25 26 27 28 29 30 Efficiency vs. Output Power vs. Temperature Signal : LTE 20MHz, PAR = 7.5dB Channel BW UTRA, IBW = 18MHz Vcc = 5V, Frequency : 850MHz DPD Polynomial Order : 11 35 30 Efficiency (%) 24 Pout (dBm) 25 20 15 10 +85C +25C 5 -40C 0 19 20 21 22 23 24 25 26 27 28 29 30 Pout (dBm) Data Sheet April 13, 2017 | Subject to change without notice - 4 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Application Circuit - TQP9309EVB-01 +5V C7 0.1uF J1 J2 13 12 11 10 9 8 7 RF Input R2 J6 R1 J3 C7 R2 1.02K R1 7.5K J1 J2 U1 RF Output R3 C3 C5 J5 Matching Network AMP1 1 2 C3 4 5 6 C5 100 pF J4 3 R4 Matching Network AMP2 C6 J4 100 pF R3 100 J5 +5V R4 0 C6 10 uF Bill of Material - TQP9309EVB-01 Reference Des. n/a Value Description Manuf. n/a Printed Circuit Board U1 n/a High Efficiency 2-stage PA TriQuint R3, R4 0 Resistor, Chip, 0603, 5% various 1109803 R3 100 Resistor, Chip, 0603, 5%, 1/16W various C7 0.1 uF Capacitor, Chip, 0603, 5% various C6 10 uF Capacitor , Chip, 6032, 10%, Tantalum various C3, C5 100 pF Capacitor , Chip, 0603, NPO/COG, 5% various R2 1.0 K Resistor, Chip, 0603, 5%, 1/16W various R1 7.5 K Resistor, Chip, 0603, 5%, 1/16W various C1, C2, C4 Part Number TQP9309 Do Not Place Data Sheet April 13, 2017 | Subject to change without notice - 5 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Pin Configuration and Description RFin VPD1 VPD2 N/C N/C 13 12 11 10 9 Matching Network AMP1 N/C RFout 8 7 Matching Network AMP2 Exposed Backside Pad GND Pin 1 Reference Mark Package Topside 1 2 VBIAS VCC 3 4 5 6 N/C N/C N/C N/C Pin No. Label Description 1 2 Vbias Vcc 3, 4, 5, 6, 8, 9, 10 GND/NC 7 RFout 11 Vpd2 12 Vpd1 13 RFin Provides reference voltage for internal active biasing circuit DC voltage supply connection No internal connection. Provide grounded land pads for PCB mounting integrity. RF output pin. The DC is internally blocked at this pin. Power down for Amp 1. This voltage adjusts for the current draw in Amp 1. Power down for Amp 2. This voltage adjusts for the current draw in Amp 2. RF input pin. The DC is internally blocked at this pin. Backside Paddle RF/DC GND Data Sheet April 13, 2017 | Subject to change without notice RF/DC ground. Use recommended via pattern to minimize inductance and thermal resistance; see PCB Mounting Pattern for suggested footprint. - 6 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Mechanical Information Package Marking and Dimensions Marking: Part number - 9309 Assembly Code - YYWW 2x 0.10 C A 0.10 C B 3.500.1 C 0.920.08 Pin #1 Locator 9309 YYWW Trace Code 2.25 4.50 4.500.1 2x 0.10 C 1.75 Top View 4.5000.10 2.000 (1X) 0.770x X 0.340y 0.10 Side View C A B 1.500 0.750 PIN1 (10X) 0.270x X 0.340y 0.10 C A B 1.080 (1X) 1.270x X 0.340y 0.10 2.000 C A B 1.000 1.480 1.080 0.680 3.5000.1 (1X) shape 0.10 C A B 1.080 1.480 1.000 2.000 0.500 1.000 1.500 Bottom View 2.000 Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Dimension and tolerance formats conform to ASME Y14.4M-1994. 3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. Data Sheet April 13, 2017 | Subject to change without notice - 7 of 9 - www.qorvo.com TQP9309 (R) High Efficiency 0.5W Small Cell Power Amplifier PCB Mounting Pattern Recommend PCB land-pad pattern metallization (Top View) Recommended PCB solder mask opening (Top View) Notes: 1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Data Sheet April 13, 2017 | Subject to change without notice - 8 of 9 - www.qorvo.com TQP9309 High Efficiency 0.5W Small Cell Power Amplifier (R) Handling Precautions Parameter Rating Standard ESD - Human Body Model (HBM) Class 2 ESDA / JEDEC JS-001-2012 ESD - Charged Device Model (CDM) Class C3 JEDEC JESD22-C101F MSL - Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260C max. reflow temp.) and tin/lead (245C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: Electrolytic plated Au over Ni RoHS Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Qorvo Green Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-890-8163 Web: www.qorvo.com Email: customer.support@qorvo.com For technical questions and application information: Email: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. 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Copyright 2017 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Data Sheet April 13, 2017 | Subject to change without notice - 9 of 9 - www.qorvo.com