TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
3.5 x 4.5 mm Leadless SMT Package
Product Features
Frequency Range : 0.7-1.0 GHz
Covers multiple bands with one component
Fully integrated, 2-stage Power Amplifier
Internally matched 50 Ω input/output
-50dBc ACLR (corrected) @ +28 dBm Pavg
32 dB Gain
27% PAE @ +28 dBm Pavg
In-built Control Bias and Temp. Comp Circuit
Single Supply Voltage : 5V
Lead-free / RoHS compliant
POE Capable
Functional Block Diagram
Top View
Ordering Information
Description
TQP9309SR
100 pieces on a 7” reel
TQP9309TR13
2500 pieces on a 13” reel
TQP9309EVB-01
Evaluation Board
Applications
Small-Cell Basestations
Enterprise Femtocell
Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29
General Description
The TQP9309 is a high-efficiency two-stage power
amplifier in a low-cost surface-mount package with on-chip
bias control and temperature compensation circuitry,
suitable for small cell base station applications.
TQP9309 provides 32 dB gain and >+28 dBm linear power
with pre-distortion correction over the 0.7-1.0 GHz
frequency range for Bands 5, 6, 8, 12, 13, 14, 17, 20, 26,
27, 28, and 29. With pre-distortion, the amplifier is able to
achieve -50dBc ACLR at 28 dBm output power using a 20
MHz LTE signal.
The TQP9309 integrates two high performance amplifier
stages onto a module to allow for a compact system design
and requires very few external components for operation.
The amplifier is bias adjustable allowing the amplifier’s
power consumption to be optimized. The TQP9309 is
available in a lead-free/RoHS-compliant 3.5x4.5mm
surface mount package and is pin-compatible to the 1.8-2.2
GHz TQP9321 and 2.5-2.7 GHz TQP9326.
Pin 1
Reference Mark
Package Topside
Exposed
Backside Pad
GND
VBIAS VCC N/C
RFoutRFin VPD1
N/CN/CN/C
N/CN/CN/CVPD2
12
1
9
6
711
4
13
2
10
3 5
8
AMP1 AMP2 Matching
Network
Matching
Network
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Device Voltage (VDD)
+5
V
TCASE
40
+25
+85
°C
Tj for >106 hours MTTF
+190
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
40 to +150°C
Supply Voltage (VCC)
+6 V
RF Input Power, CW, 50 Ω, T=25 °C
+10 dBm
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Logic Table
Parameter
High
Low
Enable
Active
Shutdown
Electrical Specifications
Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25°C, Test Frequency : 900MHz
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
700
960
MHz
Output Channel Power
+28
dBm
Gain
700 - 800MHz
28.6
31
dB
800 - 960MHz
29.6
32
33.3
dB
Gain Temperature Coefficient
-0.026
dB/°C
ACLR Uncorrected
See note 1
-37
dBc
ACLR Corrected
See note 1
-50
dBc
Power Added Efficiency
See note 1
27
%
Noise Figure
4
dB
Output P3dB
+33.9
+35
dBm
P3dB Temperature Coefficient
-0.005
dBm/°C
Supply Voltage
5
V
Quiescent Current, ICQ
85
100
127
mA
Operational Current, Icc
380
mA
VSWR Survivability
Pout = +26 dBm
Signal : WCDMA 1C, PAR = 8 dB
7:1
Thermal Resistance, θjc
Module (junction to case)
28.3
°C/W
Notes:
1. Using LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm
2. Items in min/max columns in bold at guaranteed by production test at 900 MHz
3. Items in min/max columns that are not a bold font are guaranteed by design characterization.
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
Performance Plots
Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25°C
16
18
20
22
24
26
28
30
32
34
36
20 22 24 26 28 30 32 34 36
Gain (dB)
Pout (dBm)
Gain vs. Output Power vs. Frequency
720 MHz 770 MHz
820 MHz 850 MHz
Temp.=+25°C
18
20
22
24
26
28
30
32
34
36
38
20 22 24 26 28 30 32 34 36
Gain (dB)
Pout (dBm)
Gain vs. Output Power vs. Temperature
Temp.=+25°C
+85°C
+25°C
−40°C
F = 900 MHz
0
5
10
15
20
25
30
35
40
45
50
55
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Efficiency (%)
Pout (dBm)
Efficiency vs. Output Power vs. Frequency
700 MHz
770 MHz
820 MHz
850 MHz
900 MHz
960 MHz
Temp.=+25°C
CW
0
5
10
15
20
25
30
35
40
45
50
55
60
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Efficiency (%)
Pout (dBm)
Efficiency vs. Output Power vs. Temperature
Temp.=+25°C
+85°C
+25°C
−40°C
F = 900 MHz CW
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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Performance Plots (continued)
Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25°C
-65
-60
-55
-50
-45
-40
-35
19 20 21 22 23 24 25 26 27 28 29 30
ACPR1(dBc)
Pout (dBm)
ACPR vs. Output Power vs. Frequency
770MHz DPD 820MHz DPD 850MHz DPD
960MHz DPD 770MHz No DPD 820MHz No DPD
850MHz No DPD 960MHz No DPD
Temp.=+25°C
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 3.84MHz
DPD Polynomial Order : 11
-65
-60
-55
-50
-45
-40
-35
19 20 21 22 23 24 25 26 27 28 29 30
ACPR1(dBc)
Pout (dBm)
ACPR vs. Output Power vs. Temperature
+85°C
+25°C
−40°C
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 3.84MHz
Vcc = 5V, Frequency : 850MHz
DPD Polynomial Order : 11
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26 27 28 29
ACPR1(dBc)
Pout (dBm)
ACPR vs. Output Power vs. Frequency
770MHz DPD 820MHz DPD 850MHz DPD
960MHz DPD 770MHz No DPD 820MHz No DPD
850MHz No DPD 960MHz No DPD
Temp.=+25°C
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW EUTRA, IBW = 18MHz
DPD Polynomial Order : 11
-65
-60
-55
-50
-45
-40
-35
19 20 21 22 23 24 25 26 27 28 29 30
ACPR1(dBc)
Pout (dBm)
ACPR vs. Output Power vs. Temperature
+85°C
+25°C
−40°C
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 18MHz
Vcc = 5V, Frequency : 850MHz
DPD Polynomial Order : 11
0
5
10
15
20
25
30
35
40
19 20 21 22 23 24 25 26 27 28 29 30
Efficiency (%)
Pout (dBm)
Efficiency vs. Output Power vs. Temperature
+85°C
+25°C
−40°C
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 18MHz
Vcc = 5V, Frequency : 850MHz
DPD Polynomial Order : 11
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
Application Circuit  –  TQP9309EVB-01
Bill of Material  –TQP9309EVB-01
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
1109803
U1
n/a
High Efficiency 2-stage PA
TriQuint
TQP9309
R3, R4
0 Ω
Resistor, Chip, 0603, 5%
various
R3
100 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
C7
0.1 uF
Capacitor, Chip, 0603, 5%
various
C6
10 uF
Capacitor , Chip, 6032, 10%, Tantalum
various
C3, C5
100 pF
Capacitor , Chip, 0603, NPO/COG, 5%
various
R2
1.0 KΩ
Resistor, Chip, 0603, 5%, 1/16W
various
R1
7.5 KΩ
Resistor, Chip, 0603, 5%, 1/16W
various
C1, C2, C4
Do Not Place
12
1
9
6
711
4
13
2
10
3 5
8
AMP1 AMP2 Matching
Network
Matching
Network
J2
RF
Output
J1
RF
Input
+5V
C7
0.1uF
R2
1.02K
R1
7.5K
C6
10 uF
J5
+5V
C3
100 pF C5
100 pF
R3
100
R4
0
J4
J1 J2
J3 J6
J4 J5
R4
R3
C5
R2
R1
C7
C6
U1
C3
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
Pin Configuration and Description
Pin No.
Label
Description
1
Vbias
Provides reference voltage for internal active biasing circuit
2
Vcc
DC voltage supply connection
3, 4, 5, 6, 8, 9, 10
GND/NC
No internal connection. Provide grounded land pads for PCB mounting
integrity.
7
RFout
RF output pin. The DC is internally blocked at this pin.
11
Vpd2
Power down for Amp 1. This voltage adjusts for the current draw in Amp
1.
12
Vpd1
Power down for Amp 2. This voltage adjusts for the current draw in Amp
2.
13
RFin
RF input pin. The DC is internally blocked at this pin.
Backside Paddle
RF/DC GND
RF/DC ground. Use recommended via pattern to minimize inductance
and thermal resistance; see PCB Mounting Pattern for suggested
footprint.
Pin 1
Reference Mark
Package Topside
Exposed
Backside Pad
GND
VBIAS VCC N/C
RFoutRFin VPD1
N/CN/CN/C
N/CN/CN/CVPD2
12
1
9
6
711
4
13
2
10
3 5
8
AMP1 AMP2 Matching
Network
Matching
Network
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
Mechanical Information
Package Marking and Dimensions
Marking: Part number 9309
Assembly Code - YYWW
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Dimension and tolerance formats conform to ASME Y14.4M-1994.
3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
Top View
0.92±0.08
0.10 C
4.50
4.50±0.1
2.25
3.50±0.1
1.75
2x 0.10 C
2x 0.10 C
B
A
Pin #1 Locator
Side View
Bottom View
3.500±0.1
1.080
1.000
2.000
1.000
2.000
0.680
1.080
0.750
1.500
2.000
1.080
0.500
1.000
1.500
2.000
4.500±0.10
1.480
1.480
(1X) shape
0.10 C A B
PIN1
(10X) 0.270x X 0.340y
0.10 C A B
(1X) 0.770x X 0.340y
0.10 C A B
(1X) 1.270x X 0.340y
0.10 C A B
C
9309
YYWW
Trace Code
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
PCB Mounting Pattern
Recommend PCB land-pad pattern metallization (Top View)
Recommended PCB solder mask opening (Top View)
Notes:
1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill
and have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
A3HD000000D000000 00:00 RLP
RLPmsk
TriQuint
Reach Further - Reach faster
04.50mm X 03.50mm, 4 LAYER
0.40 x4
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Data Sheet April 13, 2017 | Subject to change without notice
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®
Handling Precautions
Parameter
Rating
Standard
Caution!
ESD-Sensitive Device
ESD – Human Body Model (HBM)
Class 2
ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM)
Class C3
JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level
Level 3
IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Electrolytic plated Au over Ni
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment). This product also has the following attributes:
Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Qorvo Green
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
For technical questions and application information: Email: appsupport@qorvo.com
Important Notice
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herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
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such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
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INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
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