1997. 6. 24 1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC3199L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
LOW NOISE AUDIO AMPLIFIER APPLICATION.
FEATURES
ᴌHigh DC Current Gain : hFE=70ᴕ700.
ᴌExcellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).
ᴌComplementary to KTA1267L.
MAXIMUM RATING (Ta=25ᴱ)
123
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
EE
L
N
M
C
H
0.80
O 0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400, BL:300~700
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC150 mA
Emitter Current IE-150 mA
Collector Power Dissipation PC400 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ỌA
DC Current Gain hFE (Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transition Frequency fTVCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure
NF(1) VCE=6V, IC=0.1mA, f=100Hz, Rg=10kή- 0.5 6.0
dB
NF(2) VCE=6V, IC=0.1mA, f=1kHz, Rg=10kή- 0.2 3.0
